公开(公告)号：US12125685B2

公开(公告)日：2024-10-22

申请号：US17975012

申请日：2022-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Soo Lee ,  Yoshihisa Hirano ,  Jae Hoon Kim ,  Young Jin Noh ,  Sung Moon Park ,  Seung Kyu Lim ,  Kyeong Seok Jeong ,  Hyung Kyu Choi

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32091

Abstract: A plasma processing apparatus may include a lower electrode supporting a wafer; a focus ring surrounding an edge of the lower electrode and having a ring shape; and an edge ring disposed in a position lower than a position of the focus ring. The focus ring may include a lower region and an upper region disposed on the lower region, and the upper region increases in electrical conductivity as the upper region is closer to the lower region.

公开(公告)号：US11018046B2

公开(公告)日：2021-05-25

申请号：US16559762

申请日：2019-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo Sun ,  Sung Moon Park ,  Je Woo Han ,  Kwang Nam Kim ,  Ho Chang Lee ,  Young Hoon Jeong ,  Masayuki Tomoyasu

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

公开(公告)号：US11837496B2

公开(公告)日：2023-12-05

申请号：US17324229

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo Sun ,  Sung Moon Park ,  Je Woo Han ,  Kwang Nam Kim ,  Ho Chang Lee ,  Young Hoon Jeong ,  Masayuki Tomoyasu

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/68735 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/6875

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

公开(公告)号：US11791194B2

公开(公告)日：2023-10-17

申请号：US17324229

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo Sun ,  Sung Moon Park ,  Je Woo Han ,  Kwang Nam Kim ,  Ho Chang Lee ,  Young Hoon Jeong ,  Masayuki Tomoyasu

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/68735 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/6875

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

公开(公告)号：US20230047219A1

公开(公告)日：2023-02-16

申请号：US17975012

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Soo Lee ,  Yoshihisa Hirano ,  Jae Hoon KIm ,  Young Jin Noh ,  Sung Moon Park ,  Seung Kyu Lim ,  Kyeong Seok Jeong ,  Hyung Kyu Choi

IPC: H01L21/3065 ,  H01J37/32

Abstract: A plasma processing apparatus may include a lower electrode supporting a wafer; a focus ring surrounding an edge of the lower electrode and having a ring shape; and an edge ring disposed in a position lower than a position of the focus ring. The focus ring may include a lower region and an upper region disposed on the lower region, and the upper region increases in electrical conductivity as the upper region is closer to the lower region.

公开(公告)号：US20200258753A1

公开(公告)日：2020-08-13

申请号：US16596945

申请日：2019-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Soo LEE ,  Yoshihisa Hirano ,  Jae Hoon Kim ,  Young Jin Noh ,  Sung Moon Park ,  Seung Kyu Lim ,  Kyeong Seok Jeong ,  Hyung Kyu Choi

IPC: H01L21/3065 ,  H01J37/32

Abstract: A plasma processing apparatus may include a lower electrode supporting a wafer; a focus ring surrounding an edge of the lower electrode and having a ring shape; and an edge ring disposed in a position lower than a position of the focus ring. The focus ring may include a lower region and an upper region disposed on the lower region, and the upper region increases in electrical conductivity as the upper region is closer to the lower region.