公开(公告)号：US09396935B1

公开(公告)日：2016-07-19

申请号：US14925284

申请日：2015-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Jae Joo ,  Sungwoo Hwang

IPC: H01L21/02 ,  H01L27/06 ,  H01L27/12 ,  H01L23/538 ,  H01L21/311 ,  H01L29/16 ,  H01L29/786

CPC classification number: H01L21/02532 ,  H01L21/02002 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/7806 ,  H01L27/0688 ,  H01L27/1266 ,  H01L29/1606 ,  H01L29/66136 ,  H01L29/78684 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are methods of manufacturing an ultra-thin inorganic semiconductor film and methods of manufacturing three-dimensional (3D) semiconductor device using the ultra-thin inorganic semiconductor film. A method of manufacturing the ultra-thin inorganic semiconductor film includes preparing a Ge substrate, forming an amorphous graphene layer on the Ge substrate, forming an ultra-thin inorganic semiconductor film on the amorphous graphene layer, and transferring the ultra-thin inorganic semiconductor film to a target substrate. The ultra-thin inorganic semiconductor film is a Si thin film or a Ge thin film and may have a thickness of 50 μm or less.

Abstract translation: 提供制造超薄无机半导体膜的方法以及使用超薄无机半导体膜制造三维（3D）半导体器件的方法。 制造超薄无机半导体膜的方法包括制备Ge基板，在Ge基板上形成非晶石墨烯层，在非晶石墨烯层上形成超薄无机半导体膜，并将超薄无机半导体膜 到目标基底。 超薄无机半导体膜是Si薄膜或Ge薄膜，其厚度可以为50μm以下。

公开(公告)号：US09372297B2

公开(公告)日：2016-06-21

申请号：US14625422

申请日：2015-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Jae Joo

IPC: G02B5/32 ,  F24J2/06 ,  H01L31/054 ,  H01L31/052 ,  G02B19/00 ,  G02B5/20 ,  F21V8/00

CPC classification number: G02B5/32 ,  F24S23/12 ,  G02B5/203 ,  G02B6/0046 ,  G02B19/0004 ,  G02B19/0042 ,  H01L31/0525 ,  H01L31/0547 ,  Y02B10/20 ,  Y02E10/40 ,  Y02E10/52

Abstract: A solar light concentration plate comprises a first hologram which receives solar light and diffracts incident light in a range of an incident angle, and first and second light guides respectively disposed on both sides of the first hologram, wherein at least one of the first and second light guides has an outer surface substantially inclined to an inner surface of the at least one of the first and second light guides.

公开(公告)号：US11885700B2

公开(公告)日：2024-01-30

申请号：US17339140

申请日：2021-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Youngjun Yun ,  Jong Won Chung ,  Yeongjun Lee ,  Won-Jae Joo ,  Yasutaka Kuzumoto

IPC: G01L1/24 ,  G01L11/02 ,  G01B11/16

CPC classification number: G01L1/248 ,  G01B11/16 ,  G01L11/02

Abstract: A stretchable strain sensor includes a light-emitting element, an optical structure, and a photo-detective element. The stretchable strain sensor is located in a path of light emitted from the light-emitting element. The optical structure is configured to have optical properties that change in response to stretching of at least a portion of the stretchable strain sensor. The photo-detective element is configured to detect light transmitted through the optical structure or reflected through the optical structure.

公开(公告)号：US09373602B2

公开(公告)日：2016-06-21

申请号：US14467597

申请日：2014-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-kyung Lee ,  Byoung-lyong Choi ,  Won-Jae Joo ,  Byung-Sung Kim ,  Jae-Hyun Lee ,  Jong-Woon Lee ,  Dong-Mok Whang

IPC: H01L23/48 ,  H01L23/00 ,  H01B1/04

CPC classification number: H01L24/45 ,  H01B1/04 ,  H01L24/43 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45186 ,  H01L2224/45193 ,  H01L2224/45663 ,  H01L2224/45693 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/00 ,  H01L2924/01006 ,  H01L2924/00014

Abstract: According to example embodiments, a wire structure includes a first wire that includes a first wire core and a first carbon shell surrounding the first wire core, and a second wire that extends in a longitudinal direction from the first wire. The first wire core has a wire shape. The first carbon shell contains carbon.

Abstract translation: 根据示例性实施例，线结构包括第一线，其包括第一线芯和围绕第一线芯的第一碳壳，以及沿着纵向方向从第一线延伸的第二线。 第一线芯具有线形。 第一个碳壳含有碳。