Abstract:
A stress properties measurement method for measuring properties of stresses generated in a structure includes acquiring, from a first imaging device, a plurality of thermal images corresponding to temperatures of a surface of the structure, the plurality of thermal images being different in imaging time from each other, generating a stress distribution image corresponding to each of the plurality of thermal images, acquiring a stress value of a first section that is smaller in stress gradient than a predetermined value and respective stress values of a plurality of second sections where stresses are concentrated for the stress distribution images, and deriving correlation properties of stresses at a section of the structure based on the stress value of the first section acquired and the respective stress values of the plurality of second sections acquired.
Abstract:
A stress distribution image processing device including:
a processing unit configured to:
designate a normalization region which includes a portion of stress equal to or larger than a predetermined threshold value in a screen of a stress distribution image of a target object; and normalize pixels in the normalization region based on stress values in the normalization region to obtain a normalized image.
Abstract:
A witness material for monitoring an environmental history of an object may include a material containing a dye of a type that fluoresces in response to actinic radiation in one or both of a shift in color and a change in intensity when subjected to a predetermined stress above a predetermined level; and the material forming a coating on one or more of an outer container for the object, an inner container for the object, a tape that is applied to an outer container for the object, a tape that is applied to an inner container for the object, a shrink wrap enclosing the object, an outer surface of the object, and an inner surface of the object.
Abstract:
Prism-coupling systems and methods for characterizing large depth-of-layer waveguides formed in glass substrates are disclosed. One method includes making a first measurement after a first ion-exchange process that forms a deep region and then performing a second measurement after a second ion-exchange process that forms a shallow region. Light-blocking features are arranged relative to the prism to produce a mode spectrum where the contrast of the mode lines for the strongly coupled low-order modes is improved at the expense of loss of resolution for measuring characteristics of the shallow region. Standard techniques for determining the compressive stress, the depth of layer or the tensile strength of the shallow region are then employed. A second measurement can be made using a near-IR wavelength to measure characteristics of the deeper, first ion-exchange process. Systems and methods of measuring ion-exchanged samples using shape control are also disclosed.
Abstract:
The invention is a sensor device comprising a carrier element (24), at least one light emitting element (20) arranged on the carrier element (24), at least one light detecting element (22) arranged on the carrier element (24), a cover layer (12) reflecting at least one part of the light emitted by the light emitting element (20) to the at least one light detecting element (22), and at least one transparent filler element (16, 18) filling at least partly the space between the carrier element (24) and the cover layer (12) and being made of a flexible material.
Abstract:
A device for detecting the posture a finger or forces applied to a finger, the finger having a fingernail illuminated by light, comprises at least one photodetector for measuring a change in light reflected by an area of the finger beneath the fingernail in response to the posture of the finger or forces applied to the finger. The photodetector provides a signal corresponding to the change in light reflected. The device also includes a processor for receiving the signal and determining whether the change corresponds to a specified condition. The photodetector may be enclosed in a housing and coupled to the fingernail.
Abstract:
A device for detecting contact pressure applied to a finger, the finger having a fingernail illuminated by light, comprises at least one photodetector for measuring a change in light reflected by an area of the finger beneath the fingernail in response to the contact pressure applied to the finger. The photodetector provides a signal corresponding to the change in light reflected. The device also includes a processor for receiving the signal and determining whether the change corresponds to a specified condition. The photodetector may be enclosed in a housing and coupled to the fingernail.
Abstract:
A stress detection apparatus is provided. A piece of semiconductor grade, ngle crystal silicon mounted on the material is illuminated by an infrared source with radiation having a wavelength in the range of 800-1100 nanometers. An infrared detector monitors the photoelastic effects of illuminating the single crystal silicon with the radiation.
Abstract:
Measurements are made on a sample (1) to obtain an experimental profile (2) having structural features (3, 4) determined at least in part by the given characteristic and an expected profile (5) calculated for the sample using selected parameters. A degree of smoothing is applied to the experimental profile (2) to reduce the structural features (3,4) thereby producing a smoothed experimental profile (21 a) and the same degree of smoothing is applied to the calculated profile (5) to produce a smoothed calculated profile 51 a. The smoothed calculated profile (51 a) is compared with the smoothed experimental profile (21 a) to determine the difference between the smoothed profiles. The calculated profile is then modified by varying at least one of the parameters until the smoothed modified profile fits the smoothed experimental profile. The above steps are then repeated with the modified calculated profile using each time a degree of smoothing less than the previous time so that the structural features return and the final modified calculated profile (5b) provides a desired fit to the experimental profile (2) thereby enabling the given characteristic to be determined from the parameters used for the final modified profile.
Abstract:
A stress analysis device for moving body, includes: an infrared camera that captures an infrared image of a moving body while making a relative movement with respect to the moving body; and an image processing unit that performs image processing on a plurality of the infrared images captured by the infrared camera. The image processing unit includes: an alignment unit that aligns portions of an object included in the moving body in the plurality of the infrared images including the object, and a stress distribution calculation unit that calculates temperature changes of each of the portions of the object to obtain stress distributions of the portions of the object based on the temperature changes.