Voltage regulator and semiconductor memory device having the same

    公开(公告)号:US11797038B2

    公开(公告)日:2023-10-24

    申请号:US17577201

    申请日:2022-01-17

    CPC classification number: G05F1/575 G11C5/147 G11C8/10 G11C8/18

    Abstract: A voltage regulator and a semiconductor memory device having the same are disclosed. The voltage regulator includes an amplifier configured to amplify a difference between a reference voltage and a feedback voltage to generate an amplifier output voltage, a voltage feedback unit connected between an output supply voltage generation node and a ground voltage and configured to generate the feedback voltage, a first transfer gate unit connected between an input supply voltage and the voltage generation node and driven in response to the amplifier output voltage to provide first current, a current load replica unit connected between the voltage generation node and the ground voltage and configured to consume the first current, and a transfer unit connected between the input supply voltage and the voltage generation node and driven in response to the amplifier output voltage when the current load unit performs an operation, to provide second current.

    Phase locked loop device and method of operating ihe same

    公开(公告)号:US11201626B1

    公开(公告)日:2021-12-14

    申请号:US17240570

    申请日:2021-04-26

    Abstract: A phase locked loop device may include: a frequency modulating circuit configured to output a reference signal obtained by multiplying a frequency of an input signal by a predetermined ratio based on the input signal; a sigma-delta modulator configured to output division ratio information on one of a plurality of division rates at a number of times proportional to a frequency of the reference signal; and a phase locked loop (PLL) circuit configured to determine whether to activate based on a command signal, and, when activated, perform a phase-locking operation based on a fractional division based on the reference signal and the division ratio information.

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