公开(公告)号：US11723221B2

公开(公告)日：2023-08-08

申请号：US17113609

申请日：2020-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Kuk Kim ,  Yunseung Kang ,  Oik Kwon ,  Yeonji Kim ,  Sujin Jeon

IPC: H10B63/00 ,  H10N70/00

CPC classification number: H10B63/84 ,  H10N70/063

Abstract: A three-dimensional (3D) semiconductor memory device including first cell stacks arranged in first and second directions; second cell stacks disposed on the first cell stacks and arranged in the first and second directions; first conductive lines extending in the first direction and provided between a substrate and the first cell stacks; common conductive lines extending in the second direction and provided between the first and second cell stacks; etch stop patterns extending in the second direction and provided between the common conductive lines and top surfaces of the first cell stacks; second conductive lines extending in the first direction and provided on the second cell stacks; and a capping pattern covering a sidewall of the common conductive lines and a sidewall of the etch stop patterns, wherein each of the common conductive lines has a second thickness greater than a first thickness of each of the first conductive lines.

公开(公告)号：US11914892B2

公开(公告)日：2024-02-27

申请号：US17742030

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangwoo Lee ,  Sangjin Yoo ,  Yeonji Kim ,  Jeongkeun Park ,  Jeongwoo Lee

IPC: G06F3/06

CPC classification number: G06F3/0656 ,  G06F3/0604 ,  G06F3/0679

Abstract: A storage device includes a non-volatile memory including memory blocks, and a storage controller including a history buffer including plural history read level storage areas corresponding to the memory blocks. The storage controller dynamically adjusts a number of the history read level storage areas allocated to one or more of the plurality of memory blocks based on reliabilities of the memory blocks during runtime of the storage device. The storage controller increases a number of history read level storage areas allocated to a first memory block among the memory blocks that has a relatively low reliability with respect to the reliabilities of remaining ones of the memory blocks.

公开(公告)号：US20230066982A1

公开(公告)日：2023-03-02

申请号：US17742030

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangwoo Lee ,  Sangjin Yoo ,  Yeonji Kim ,  Jeongkeun Park ,  Jeongwoo Lee

IPC: G06F3/06

Abstract: A storage device includes a non-volatile memory including memory blocks, and a storage controller including a history buffer including plural history read level storage areas corresponding to the memory blocks. The storage controller dynamically adjusts a number of the history read level storage areas allocated to one or more of the plurality of memory blocks based on reliabilities of the memory blocks during runtime of the storage device. The storage controller increases a number of history read level storage areas allocated to a first memory block among the memory blocks that has a relatively low reliability with respect to the reliabilities of remaining ones of the memory blocks.

公开(公告)号：US10395979B2

公开(公告)日：2019-08-27

申请号：US16015809

申请日：2018-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inho Kim ,  Woohyun Lee ,  Oik Kwon ,  Sang-Kuk Kim ,  Yeonji Kim ,  Jongchul Park

IPC: H01L27/11573 ,  H01L21/768 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02

Abstract: A semiconductor device includes a first lower insulating interlayer, a protection insulating layer, and a first upper insulating interlayer that are sequentially stacked on a substrate, and a conductive pattern penetrating the first upper insulating interlayer, the protection insulating layer; and the first lower insulating interlayer. The conductive pattern includes a line part extending in a direction parallel to an upper surface of the substrate and contact parts extending from the line part toward the substrate. The contact parts are separated from each other with an insulating pattern therebetween. The insulating pattern includes a portion of each of the first upper insulating interlayer, the protection insulating layer, and the first lower insulating interlayer. At least a portion of the insulating pattern has a stepped profile.

公开(公告)号：US11409441B2

公开(公告)日：2022-08-09

申请号：US16999201

申请日：2020-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonji Kim ,  Youngdeok Seo ,  Chanha Kim ,  Kangho Roh ,  Hyunkyo Oh ,  Heewon Lee

IPC: G06F3/06 ,  G06N20/00 ,  G06F11/10

Abstract: An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.