公开(公告)号：US06232192B1

公开(公告)日：2001-05-15

申请号：US09484410

申请日：2000-01-18

申请人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

发明人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

IPC分类号： H01L21336

CPC分类号： H01L21/28194 ,  H01L21/2257 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/66628

摘要： Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

摘要翻译： 源极/漏极扩散区域形成在硅衬底上，使得源极/漏极扩散区域在硅衬底上从两侧夹着栅电极。 在栅电极的每个侧表面上形成侧壁氧化膜。 在侧壁氧化膜下面的延伸部分E中形成有凹入部分。 形成源/漏电极以填充凹部。 因此，包括一对源极/漏极扩散区域和源极/漏极电极的各个区域的薄层电阻减小，并且获得具有改善的电流驱动能力的具有场效应晶体管的半导体器件。

公开(公告)号：US06373108B1

公开(公告)日：2002-04-16

申请号：US09259336

申请日：1999-03-01

申请人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

发明人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

IPC分类号： H01L2976

CPC分类号： H01L21/28194 ,  H01L21/2257 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/66628

摘要： Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

摘要翻译： 源极/漏极扩散区域形成在硅衬底上，使得源极/漏极扩散区域在硅衬底上从两侧夹着栅电极。 在栅电极的每个侧表面上形成侧壁氧化膜。 在侧壁氧化膜下面的延伸部分E中形成有凹入部分。 形成源/漏电极以填充凹部。 因此，包括一对源极/漏极扩散区域和源极/漏极电极的各个区域的薄层电阻减小，并且获得具有改善的电流驱动能力的具有场效应晶体管的半导体器件。

公开(公告)号：US06228728B1

公开(公告)日：2001-05-08

申请号：US09243480

申请日：1999-02-03

申请人： Taisuke Furukawa ,  Takumi Nakahata ,  Shigemitsu Maruno ,  Kohei Sugihara ,  Yasutaka Nishioka ,  Satoshi Yamakawa ,  Yasunori Tokuda

发明人： Taisuke Furukawa ,  Takumi Nakahata ,  Shigemitsu Maruno ,  Kohei Sugihara ,  Yasutaka Nishioka ,  Satoshi Yamakawa ,  Yasunori Tokuda

IPC分类号： H01L21336

CPC分类号： H01L29/66628

摘要： According to the inventive method of fabricating a semiconductor device, a silicon substrate is exposed to an oxygen atmosphere of 600° C. to 900° C., for forming silicon oxide films on surfaces of epitaxial silicon layers and those of silicon fragments. Thus, a method of fabricating a semiconductor device capable of preventing electrodes thereof from shorting can be provided.

摘要翻译： 根据制造半导体器件的本发明方法，将硅衬底暴露于600℃至900℃的氧气氛中，以在外延硅层和硅片的表面上形成氧化硅膜。 因此，可以提供一种制造能够防止其电极短路的半导体器件的方法。

公开(公告)号：US06635938B1

公开(公告)日：2003-10-21

申请号：US09716219

申请日：2000-11-21

申请人： Takumi Nakahata ,  Shigemitsu Maruno ,  Taisuke Furukawa ,  Naruhisa Miura ,  Toshiyuki Oishi ,  Yasunori Tokuda

发明人： Takumi Nakahata ,  Shigemitsu Maruno ,  Taisuke Furukawa ,  Naruhisa Miura ,  Toshiyuki Oishi ,  Yasunori Tokuda

IPC分类号： H01L2994

CPC分类号： H01L29/4983 ,  H01L21/823418 ,  H01L21/823468 ,  H01L29/41783 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628

摘要： A polysilicon nitride film is formed to cover a polysilicon gate. By heat treatment of the silicon nitride film in an oxygen atmosphere, a silicon oxinitride film is formed. By anisotropically etching the silicon oxinitride film and the silicon nitride film, a sidewall insulating film is formed. By epitaxial growth, selective silicon films of a prescribed film thickness are formed on source and drain regions. During this period, silicon islands are not deposited on the surface of sidewall insulating film. Consequently, a semiconductor device including a transistor of a superior electrical insulation can be obtained.

摘要翻译： 形成多晶硅氮化物膜以覆盖多晶硅栅极。 通过在氧气氛中对氮化硅膜进行热处理，形成硅氧氮化物膜。 通过各向异性蚀刻氧氮化硅膜和氮化硅膜，形成侧壁绝缘膜。 通过外延生长，在源极和漏极区域上形成规定膜厚度的选择性硅膜。 在此期间，硅岛不会沉积在侧壁绝缘膜的表面上。 因此，可以获得包括具有优异的电绝缘的晶体管的半导体器件。