公开(公告)号：US06228728B1

公开(公告)日：2001-05-08

申请号：US09243480

申请日：1999-02-03

申请人： Taisuke Furukawa ,  Takumi Nakahata ,  Shigemitsu Maruno ,  Kohei Sugihara ,  Yasutaka Nishioka ,  Satoshi Yamakawa ,  Yasunori Tokuda

发明人： Taisuke Furukawa ,  Takumi Nakahata ,  Shigemitsu Maruno ,  Kohei Sugihara ,  Yasutaka Nishioka ,  Satoshi Yamakawa ,  Yasunori Tokuda

IPC分类号： H01L21336

CPC分类号： H01L29/66628

摘要： According to the inventive method of fabricating a semiconductor device, a silicon substrate is exposed to an oxygen atmosphere of 600° C. to 900° C., for forming silicon oxide films on surfaces of epitaxial silicon layers and those of silicon fragments. Thus, a method of fabricating a semiconductor device capable of preventing electrodes thereof from shorting can be provided.

摘要翻译： 根据制造半导体器件的本发明方法，将硅衬底暴露于600℃至900℃的氧气氛中，以在外延硅层和硅片的表面上形成氧化硅膜。 因此，可以提供一种制造能够防止其电极短路的半导体器件的方法。

公开(公告)号：US06232192B1

公开(公告)日：2001-05-15

申请号：US09484410

申请日：2000-01-18

申请人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

发明人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

IPC分类号： H01L21336

CPC分类号： H01L21/28194 ,  H01L21/2257 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/66628

摘要： Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

摘要翻译： 源极/漏极扩散区域形成在硅衬底上，使得源极/漏极扩散区域在硅衬底上从两侧夹着栅电极。 在栅电极的每个侧表面上形成侧壁氧化膜。 在侧壁氧化膜下面的延伸部分E中形成有凹入部分。 形成源/漏电极以填充凹部。 因此，包括一对源极/漏极扩散区域和源极/漏极电极的各个区域的薄层电阻减小，并且获得具有改善的电流驱动能力的具有场效应晶体管的半导体器件。

公开(公告)号：US06373108B1

公开(公告)日：2002-04-16

申请号：US09259336

申请日：1999-03-01

申请人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

发明人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

IPC分类号： H01L2976

CPC分类号： H01L21/28194 ,  H01L21/2257 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/66628

摘要： Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

摘要翻译： 源极/漏极扩散区域形成在硅衬底上，使得源极/漏极扩散区域在硅衬底上从两侧夹着栅电极。 在栅电极的每个侧表面上形成侧壁氧化膜。 在侧壁氧化膜下面的延伸部分E中形成有凹入部分。 形成源/漏电极以填充凹部。 因此，包括一对源极/漏极扩散区域和源极/漏极电极的各个区域的薄层电阻减小，并且获得具有改善的电流驱动能力的具有场效应晶体管的半导体器件。

公开(公告)号：US06465851B1

公开(公告)日：2002-10-15

申请号：US08948260

申请日：1997-10-09

申请人： Takumi Nakahata ,  Satoshi Yamakawa ,  Yuji Abe

发明人： Takumi Nakahata ,  Satoshi Yamakawa ,  Yuji Abe

IPC分类号： H01L2976

CPC分类号： H01L21/31658 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/31662 ,  H01L21/32105 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76888 ,  H01L21/76889 ,  H01L27/10814 ,  H01L27/10844 ,  H01L27/10855 ,  H01L27/10888 ,  Y10S438/906

摘要： Epitaxial silicon layers are formed on n+-source/drain regions of two MOS transistors neighboring to each other and formed on a silicon substrate, respectively. In this processing, polycrystalline silicon pieces are generated on an element isolating and insulating film and others. Thereafter, the silicon substrate is exposed to an oxygen atmosphere so that hydrogen reacts with silicon at the surfaces of the epitaxial silicon layers and the surfaces of the polycrystalline silicon pieces to form silicon oxide films and polycrystalline silicon pieces. Thereby, short-circuit between MOS transistors in neighboring memory cells is prevented, and a semiconductor device has a high electrical reliability.

摘要翻译： 外延硅层分别形成在两个相邻的MOS晶体管的n +源极/漏极区上，并形成在硅衬底上。 在该处理中，在元件隔离和绝缘膜等上产生多晶硅片。 此后，将硅衬底暴露于氧气氛，使得氢在外延硅层的表面和多晶硅片的表面与硅反应，以形成氧化硅膜和多晶硅片。 由此，防止了相邻存储单元中的MOS晶体管之间的短路，并且半导体器件具有高的电可靠性。

公开(公告)号：US06417534B2

公开(公告)日：2002-07-09

申请号：US09158605

申请日：1998-09-23

申请人： Takumi Nakahata ,  Satoshi Yamakawa ,  Yoshihiko Toyoda

发明人： Takumi Nakahata ,  Satoshi Yamakawa ,  Yoshihiko Toyoda

IPC分类号： H01L27108

CPC分类号： H01L28/40 ,  H01L21/28525 ,  H01L21/76802 ,  H01L21/76877 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10897

摘要： A polysilicon film, a titanium silicide film and a titanium nitride film are formed in a storage node contact hole of a memory cell region, while a polysilicon film, a titanium silicide film and a titanium nitride film are formed in a bit line contact hole. In a peripheral circuit region, a peripheral circuit contact hole is formed in a silicon oxide film, and another peripheral circuit contact hole is formed in an interlayer insulation film and a silicon oxide film. Thus obtained are a semiconductor device reducing a leakage current, suppressing an electrical short and attaining a high-speed operation while readily forming each contact hole and a method of fabricating the same.

公开(公告)号：US06316320B1

公开(公告)日：2001-11-13

申请号：US09449572

申请日：1999-11-29

申请人： Takumi Nakahata ,  Satoshi Yamakawa ,  Yuji Abe

发明人： Takumi Nakahata ,  Satoshi Yamakawa ,  Yuji Abe

IPC分类号： H01L21336

CPC分类号： H01L21/31658 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/31662 ,  H01L21/32105 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76888 ,  H01L21/76889 ,  H01L27/10814 ,  H01L27/10844 ,  H01L27/10855 ,  H01L27/10888 ,  Y10S438/906

摘要： Epitaxial silicon layers are formed on n+-source/drain regions of two MOS transistors neighboring to each other and formed on a silicon substrate, respectively. In this processing, polycrystalline silicon pieces are generated on an element isolating and insulating film and others. Thereafter, the silicon substrate is exposed to an oxygen atmosphere so that hydrogen reacts with silicon at the surfaces of the epitaxial silicon layers and the surfaces of the polycrystalline silicon pieces to form silicon oxide films and polycrystalline silicon pieces. Thereby, short-circuit between MOS transistors in neighboring memory cells is prevented, and a semiconductor device has a high electrical reliability.

摘要翻译： 外延硅层分别形成在两个相邻的MOS晶体管的n +源极/漏极区上，并形成在硅衬底上。 在该处理中，在元件隔离和绝缘膜等上产生多晶硅片。 此后，将硅衬底暴露于氧气氛，使得氢在外延硅层的表面和多晶硅片的表面与硅反应，以形成氧化硅膜和多晶硅片。 由此，防止了相邻存储单元中的MOS晶体管之间的短路，并且半导体器件具有高的电可靠性。

公开(公告)号：US08346826B2

公开(公告)日：2013-01-01

申请号：US11236844

申请日：2005-09-28

申请人： Takashi Torii ,  Satoshi Yamakawa ,  Yoshihiro Kajiki

发明人： Takashi Torii ,  Satoshi Yamakawa ,  Yoshihiro Kajiki

IPC分类号： G06F12/00 ,  G06F17/30

CPC分类号： G06F11/1469 ,  G06F11/1456 ,  G06F11/1466 ,  G06F17/30088 ,  G06F17/302 ,  G06F17/30235

摘要： A system which includes at least one client, a plurality of file servers, each having a file system, and a switch logically arranged between the client and the plurality of file servers to provide file access services which virtually render the plurality of file systems accessible as a single file system, termed a ‘pseudo file system’, when viewed from the terminal. The switch distributes a command that starts generation of snapshots to the plurality of file servers, which file servers formulate respective snapshots responsive to the command that starts formation of the snapshots. The switch sets the plurality of snapshots, generated by the plurality of file servers, so as to be associated with the file system structure of the virtual file system at the time of formation of the snapshots.

摘要翻译： 一种系统，其包括至少一个客户端，多个文件服务器，每个具有文件系统，以及逻辑上布置在客户机和多个文件服务器之间的交换机，以提供虚拟地使多个文件系统可访问的文件访问服务 当从终端观看时，称为伪文件系统的单个文件系统。 交换机分配一个开始生成快照的命令到多个文件服务器，哪个文件服务器响应于开始形成快照的命令来制定相应的快照。 交换机设置由多个文件服务器生成的多个快照，以便在形成快照时与虚拟文件系统的文件系统结构相关联。

公开(公告)号：US07765217B2

公开(公告)日：2010-07-27

申请号：US11305142

申请日：2005-12-16

申请人： Satoshi Yamakawa ,  Takashi Torii ,  Yoshihiro Kajiki

发明人： Satoshi Yamakawa ,  Takashi Torii ,  Yoshihiro Kajiki

IPC分类号： G06F17/30

CPC分类号： G06F17/30079

摘要： Each of the sites interconnected to one another through a wide area network includes at least one client, a switch device logically disposed between the client and at least one server including a storage device, for providing to the client a file access virtually unifying of a plurality of storage devices, and an analysis device connected to the switch device. The switch device takes log information on the file access from the client. The analysis device determines data to be migrated to the server in a site to which the client belongs or the server in a site in vicinity of the site to which the client belongs, and commands the switch device to migrate the data. The switch device migrates the data based on the command from the analysis device.

摘要翻译： 通过广域网彼此互连的每个站点包括至少一个客户端，逻辑地设置在客户端和至少一个包括存储设备的服务器之间的交换设备，用于向客户端提供虚拟地统一多个 的存储装置，以及连接到开关装置的分析装置。 交换机设备从客户端获取有关文件访问的日志信息。 分析装置确定要迁移到客户端所属站点中的服务器的数据或客户端所在站点附近的站点中的服务器，并命令交换设备迁移数据。 交换机根据分析设备的命令迁移数据。

公开(公告)号：US20100088318A1

公开(公告)日：2010-04-08

申请号：US12443403

申请日：2007-10-02

申请人： Masaki Kan ,  Yoshihiro Kajiki ,  Satoshi Yamakawa ,  Takashi Torii ,  Yuji Kaneko

发明人： Masaki Kan ,  Yoshihiro Kajiki ,  Satoshi Yamakawa ,  Takashi Torii ,  Yuji Kaneko

IPC分类号： G06F17/30

CPC分类号： G06F17/30613

摘要： Disclosed is a system in which an index registration unit registers an index, which will be used for search processing, as a partitioned index which is partitioned on a time series basis, and a search means reads indexes older than a specified point in time, which is used as a search base point, to perform search processing, thereby searching for information based on a point in time in the past.

摘要翻译： 公开了一种系统，其中索引登记单元将用于搜索处理的索引登记为按时间序列划分的分区索引，并且搜索装置读取比指定时间点更早的索引，其中 被用作搜索基点，以执行搜索处理，从而基于过去的时间点搜索信息。

公开(公告)号：US20070192494A1

公开(公告)日：2007-08-16

申请号：US10599047

申请日：2004-11-15

申请人： Satoshi Yamakawa ,  Takashi Torii ,  Wataru Katsurashima

发明人： Satoshi Yamakawa ,  Takashi Torii ,  Wataru Katsurashima

IPC分类号： G06F15/16

CPC分类号： H04L67/2804 ,  H04L67/14

摘要： An intermediate device which can be introduced and removed in seamless way is disclosed. The state information acquiring means acquires state information required to maintain the state of a session established between the first information processing device and the second information processing device for the information processing service, from the first information processing device or the second information processing device. The intermediate service managing means generates, based on the state information, transfer rules for applying the intermediate service to data of the information processing service, and transferring the data to which the intermediate service is applied. The transfer control means maintains the state of the existing session between itself and the second information processing device, establishes a new session between itself and the first information processing device, and transfers the data using the existing session and the new session, according to the transfer rules.

摘要翻译： 公开了可以无缝地引入和去除的中间装置。 状态信息获取装置从第一信息处理装置或第二信息处理装置获取维持在第一信息处理装置和信息处理服务的第二信息处理装置之间建立的会话的状态所需的状态信息。 中间服务管理装置根据状态信息生成用于将中间服务应用于信息处理服务的数据的传送规则，并且传送应用了中间服务的数据。 传输控制装置保持其本身与第二信息处理装置之间的现有会话的状态，在其自身与第一信息处理装置之间建立新的会话，并且根据传送方式使用现有会话和新会话传送数据 规则。