公开(公告)号：US06232192B1

公开(公告)日：2001-05-15

申请号：US09484410

申请日：2000-01-18

申请人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

发明人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

IPC分类号： H01L21336

CPC分类号： H01L21/28194 ,  H01L21/2257 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/66628

摘要： Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

摘要翻译： 源极/漏极扩散区域形成在硅衬底上，使得源极/漏极扩散区域在硅衬底上从两侧夹着栅电极。 在栅电极的每个侧表面上形成侧壁氧化膜。 在侧壁氧化膜下面的延伸部分E中形成有凹入部分。 形成源/漏电极以填充凹部。 因此，包括一对源极/漏极扩散区域和源极/漏极电极的各个区域的薄层电阻减小，并且获得具有改善的电流驱动能力的具有场效应晶体管的半导体器件。

公开(公告)号：US06373108B1

公开(公告)日：2002-04-16

申请号：US09259336

申请日：1999-03-01

申请人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

发明人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

IPC分类号： H01L2976

CPC分类号： H01L21/28194 ,  H01L21/2257 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/66628

摘要： Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

摘要翻译： 源极/漏极扩散区域形成在硅衬底上，使得源极/漏极扩散区域在硅衬底上从两侧夹着栅电极。 在栅电极的每个侧表面上形成侧壁氧化膜。 在侧壁氧化膜下面的延伸部分E中形成有凹入部分。 形成源/漏电极以填充凹部。 因此，包括一对源极/漏极扩散区域和源极/漏极电极的各个区域的薄层电阻减小，并且获得具有改善的电流驱动能力的具有场效应晶体管的半导体器件。

公开(公告)号：US06228728B1

公开(公告)日：2001-05-08

申请号：US09243480

申请日：1999-02-03

申请人： Taisuke Furukawa ,  Takumi Nakahata ,  Shigemitsu Maruno ,  Kohei Sugihara ,  Yasutaka Nishioka ,  Satoshi Yamakawa ,  Yasunori Tokuda

发明人： Taisuke Furukawa ,  Takumi Nakahata ,  Shigemitsu Maruno ,  Kohei Sugihara ,  Yasutaka Nishioka ,  Satoshi Yamakawa ,  Yasunori Tokuda

IPC分类号： H01L21336

CPC分类号： H01L29/66628

摘要： According to the inventive method of fabricating a semiconductor device, a silicon substrate is exposed to an oxygen atmosphere of 600° C. to 900° C., for forming silicon oxide films on surfaces of epitaxial silicon layers and those of silicon fragments. Thus, a method of fabricating a semiconductor device capable of preventing electrodes thereof from shorting can be provided.

摘要翻译： 根据制造半导体器件的本发明方法，将硅衬底暴露于600℃至900℃的氧气氛中，以在外延硅层和硅片的表面上形成氧化硅膜。 因此，可以提供一种制造能够防止其电极短路的半导体器件的方法。

公开(公告)号：US06635938B1

公开(公告)日：2003-10-21

申请号：US09716219

申请日：2000-11-21

申请人： Takumi Nakahata ,  Shigemitsu Maruno ,  Taisuke Furukawa ,  Naruhisa Miura ,  Toshiyuki Oishi ,  Yasunori Tokuda

发明人： Takumi Nakahata ,  Shigemitsu Maruno ,  Taisuke Furukawa ,  Naruhisa Miura ,  Toshiyuki Oishi ,  Yasunori Tokuda

IPC分类号： H01L2994

CPC分类号： H01L29/4983 ,  H01L21/823418 ,  H01L21/823468 ,  H01L29/41783 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628

摘要： A polysilicon nitride film is formed to cover a polysilicon gate. By heat treatment of the silicon nitride film in an oxygen atmosphere, a silicon oxinitride film is formed. By anisotropically etching the silicon oxinitride film and the silicon nitride film, a sidewall insulating film is formed. By epitaxial growth, selective silicon films of a prescribed film thickness are formed on source and drain regions. During this period, silicon islands are not deposited on the surface of sidewall insulating film. Consequently, a semiconductor device including a transistor of a superior electrical insulation can be obtained.

摘要翻译： 形成多晶硅氮化物膜以覆盖多晶硅栅极。 通过在氧气氛中对氮化硅膜进行热处理，形成硅氧氮化物膜。 通过各向异性蚀刻氧氮化硅膜和氮化硅膜，形成侧壁绝缘膜。 通过外延生长，在源极和漏极区域上形成规定膜厚度的选择性硅膜。 在此期间，硅岛不会沉积在侧壁绝缘膜的表面上。 因此，可以获得包括具有优异的电绝缘的晶体管的半导体器件。

公开(公告)号：US07939943B2

公开(公告)日：2011-05-10

申请号：US12268509

申请日：2008-11-11

申请人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Hiroshi Kurokawa ,  Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yasunori Tokuda

发明人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Hiroshi Kurokawa ,  Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yasunori Tokuda

IPC分类号： H01L23/48 ,  H01L29/43

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01L2924/00

摘要： A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, which is an antioxidant film for preventing oxidation of the Ta film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film as an antioxidant film is formed on the entire upper surface of the Ta film which forms the p electrode, to prevent oxidation of the Ta film. This inhibits the resistance between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the low-resistance p electrode.

摘要翻译： 提供一种具有在其自身与其他电极之间不具有电阻的p电极的氮化物半导体器件及其制造方法。 p电极由作为防止氧化Ta膜的抗氧化剂膜和氮化物半导体的p型接触层的第一Pd膜，Ta膜和第二Pd膜形成。 在第二Pd膜上形成焊盘电极。 作为抗氧化剂膜的第二Pd膜形成在形成p电极的Ta膜的整个上表面上，以防止Ta膜的氧化。 这抑制了p电极和焊盘电极之间的电阻，从而防止p电极和焊盘电极之间的接触不良，并提供低电阻p电极。

公开(公告)号：US20090142871A1

公开(公告)日：2009-06-04

申请号：US12323634

申请日：2008-11-26

申请人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

发明人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/325 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063

摘要： A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.

摘要翻译： 半导体器件的制造方法为半导体器件提供了氮化镓基半导体结构，其允许长期稳定的操作而不会降低器件性能。 在表面以外的表面上形成绝缘膜之后，供给诸如O 2，O 3，NO，N 2 O或NO 2的含氧气体以从表面氧化p型GaN接触层，由此 在p型GaN接触层的表面上形成氧化膜。 然后，通过在氧化物膜和绝缘膜上的蒸发或溅射形成与p型GaN接触层建立接触的p型电极。 随后在含有含氮气体如N 2或NH 3或惰性气体例如Ar或He的气氛中，在400-700℃的温度下进行热处理。

公开(公告)号：US06518635B1

公开(公告)日：2003-02-11

申请号：US09610862

申请日：2000-07-06

申请人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Yuji Abe ,  Yasunori Tokuda

发明人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Yuji Abe ,  Yasunori Tokuda

IPC分类号： H01L27108

CPC分类号： H01L29/517 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/28167

摘要： A major object of the present invention is to provide an improved semiconductor device so as to be able to reduce gate electric field concentration at a channel edge, suppress decrease in the threshold during MOSFET operation and reduce the leakage current. A gate insulation film is formed on a semiconductor substrate. A gate electrode is formed on the semiconductor substrate with the gate insulation film therebetween. The dielectric constant of the gate insulation film is not uniform in the surface.

摘要翻译： 本发明的主要目的是提供一种改进的半导体器件，以便能够降低沟道边缘处的栅极电场集中，抑制MOSFET操作期间阈值的降低并减少漏电流。 在半导体衬底上形成栅极绝缘膜。 栅电极形成在半导体衬底上，其间具有栅极绝缘膜。 栅极绝缘膜的介电常数在表面上不均匀。

公开(公告)号：US4786951A

公开(公告)日：1988-11-22

申请号：US828375

申请日：1986-02-11

申请人： Yasunori Tokuda ,  Kenzo Fujiwara

发明人： Yasunori Tokuda ,  Kenzo Fujiwara

IPC分类号： H01L33/06 ,  H01S5/12 ,  H01S5/20 ,  H01S5/34 ,  H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/12 ,  H01S5/1231 ,  H01S5/2059 ,  H01S5/3428 ,  Y10S148/071 ,  Y10S148/09 ,  Y10S148/095 ,  Y10S148/106 ,  Y10S148/16

摘要： A semiconductor optical element having a layer which exhibits a function of diffraction grating between a first cladding layer and a second cladding layer, wherein the layer which exhibits the function of diffraction grating consists of a superlattice layer in which crystal layers are periodically mixed to constitute a semiconductor grating layer.

摘要翻译： 一种半导体光学元件，具有在第一包层和第二包层之间具有衍射光栅功能的层，其中具有衍射光栅功能的层由超晶格层构成，晶格层周期性地混合构成 半导体光栅层。

公开(公告)号：US07678597B2

公开(公告)日：2010-03-16

申请号：US12323634

申请日：2008-11-26

申请人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

发明人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/3205

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/325 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063

摘要： A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.

摘要翻译： 半导体器件的制造方法为半导体器件提供了氮化镓基半导体结构，其允许长期稳定的操作而不会降低器件性能。 在表面以外的表面上形成绝缘膜之后，供给诸如O 2，O 3，NO，N 2 O或NO 2的含氧气体以从表面氧化p型GaN接触层，由此 在p型GaN接触层的表面上形成氧化膜。 然后，通过在氧化物膜和绝缘膜上的蒸发或溅射形成与p型GaN接触层建立接触的p型电极。 随后在含有含氮气体如N 2或NH 3或惰性气体例如Ar或He的气氛中，在400-700℃的温度下进行热处理。

公开(公告)号：US20090170304A1

公开(公告)日：2009-07-02

申请号：US12337878

申请日：2008-12-18

申请人： Yoichiro Tarui ,  Kenichi Ohtsuka ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

发明人： Yoichiro Tarui ,  Kenichi Ohtsuka ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

IPC分类号： H01L21/441

CPC分类号： H01L21/28575 ,  H01L29/2003 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40

摘要： A method of manufacturing a semiconductor device is provided, which can reduce the contact resistance of an ohmic electrode to a p-type nitride semiconductor layer and can achieve long-term stable operation. In forming, in an electrode forming step, a p-type ohmic electrode of a metal film by successive lamination of a Pd film which is a first p-type ohmic electrode and a Ta film which is a second p-type ohmic electrode on a p-type GaN contact layer, the metal film is formed to include an oxygen atom. In the presence of an oxygen atom in the metal film, then in a heat-treatment step, the p-type ohmic electrode of the metal film is heat-treated in an atmosphere that contains no oxygen atom-containing gas.

摘要翻译： 提供一种制造半导体器件的方法，其可以将欧姆电极的接触电阻降低到p型氮化物半导体层，并且可以实现长期稳定的操作。 在电极形成步骤中，通过在第一p型欧姆电极上连续层压作为第一p型欧姆电极的Pd膜和作为第二p型欧姆电极的Ta膜，在电极形成步骤中形成金属膜的p型欧姆电极 p型GaN接触层，金属膜形成为包含氧原子。 在金属膜中存在氧原子的情况下，在热处理工序中，金属膜的p型欧姆电极在不含氧原子气体的气氛中进行热处理。