公开(公告)号：US20140210113A1

公开(公告)日：2014-07-31

申请号：US13753792

申请日：2013-01-30

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Dongsung Hong ,  Lijuan Zou ,  Daniel Sullivan ,  Lily Horng Youtt

IPC: H01L23/544 ,  H01L21/308

CPC classification number: H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: When opaque films are deposited on semi-conductor wafers, underlying alignment marks may be concealed. The re-exposure of such alignment marks is one source of resulting surface topography. In accordance with one implementation, alignment marks embedded in a wafer may be exposed by removing material from one or more layers and by replacing such material with a transparent material. In accordance with another implementation, the amount of material removed in an alignment mark recovery process may be mitigated by selectively ashing or etching above a stop layer.

Abstract translation: 当不透明膜沉积在半导体晶片上时，潜在的对准标记可能被隐藏。 这种对准标记的再曝光是所得表面形貌的一个来源。 根据一个实施方案，嵌入在晶片中的对准标记可以通过从一个或多个层去除材料并且用透明材料代替这样的材料来暴露。 根据另一实施方式，可以通过在停止层上方选择性灰化或蚀刻来减轻在对准标记恢复过程中去除的材料的量。

公开(公告)号：US10737291B2

公开(公告)日：2020-08-11

申请号：US16059627

申请日：2018-08-09

Applicant: Seagate Technology LLC

Inventor： Daniel Richard Buettner ,  Andrew David Habermas ,  Daniel Sullivan ,  Joseph M. Stephan

IPC: G11B5/60 ,  B05D3/06 ,  B33Y10/00 ,  B33Y80/00 ,  B29C59/02 ,  G11B5/31 ,  G03F7/00 ,  B05D3/12 ,  B05D7/00 ,  B29C35/08

Abstract: The present disclosure includes methods of forming air bearing surfaces having multi-tier structures using nanoimprint technology and/or 3D printing technology. In some embodiments, a single stage of milling can be used to transfer a multi-tier photoresist pattern into a substrate (e.g., an AlTiC substrate).

公开(公告)号：US20180361427A1

公开(公告)日：2018-12-20

申请号：US16059627

申请日：2018-08-09

Applicant: Seagate Technology LLC

Inventor： Daniel Richard Buettner ,  Andrew David Habermas ,  Daniel Sullivan ,  Joseph M. Stephan

IPC: B05D3/06 ,  G11B5/60 ,  G11B5/31 ,  B29C59/02 ,  B33Y80/00 ,  B33Y10/00 ,  B05D7/00 ,  B05D3/12

CPC classification number: B05D3/067 ,  B05D3/12 ,  B05D7/54 ,  B29C59/02 ,  B29C59/026 ,  B29C2035/0827 ,  B29C2059/023 ,  B33Y10/00 ,  B33Y80/00 ,  G03F7/0002 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/6005 ,  G11B5/6082 ,  Y10T29/49041

Abstract: The present disclosure includes methods of forming air bearing surfaces having multi-tier structures using nanoimprint technology and/or 3D printing technology. In some embodiments, a single stage of milling can be used to transfer a multi-tier photoresist pattern into a substrate (e.g., an AlTiC substrate).

公开(公告)号：US10058890B1

公开(公告)日：2018-08-28

申请号：US15354718

申请日：2016-11-17

Applicant: Seagate Technology LLC

Inventor： Daniel Richard Buettner ,  Andrew David Habermas ,  Daniel Sullivan ,  Joseph M. Stephan

IPC: G11B5/60 ,  B05D3/06 ,  B05D3/12 ,  B33Y10/00 ,  B33Y80/00 ,  B05D7/00 ,  B29C59/02 ,  G11B5/31

CPC classification number: B05D3/067 ,  B05D3/12 ,  B05D7/54 ,  B29C59/02 ,  B29C59/026 ,  B29C2035/0827 ,  B29C2059/023 ,  B33Y10/00 ,  B33Y80/00 ,  G03F7/0002 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/6005 ,  G11B5/6082 ,  Y10T29/49041

Abstract: The present disclosure includes methods of forming air bearing surfaces having multi-tier structures using nanoimprint technology and/or 3D printing technology. In some embodiments, a single stage of milling can be used to transfer a multi-tier photoresist pattern into a substrate (e.g., an AlTiC substrate).

公开(公告)号：US09385089B2

公开(公告)日：2016-07-05

申请号：US13753792

申请日：2013-01-30

Applicant: Seagate Technology LLC

Inventor： Dongsung Hong ,  Lijuan Zou ,  Daniel Sullivan ,  Lily Horng Youtt

IPC: H01L21/76 ,  H01L21/46 ,  H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: When opaque films are deposited on semi-conductor wafers, underlying alignment marks may be concealed. The re-exposure of such alignment marks is one source of resulting surface topography. In accordance with one implementation, alignment marks embedded in a wafer may be exposed by removing material from one or more layers and by replacing such material with a transparent material. In accordance with another implementation, the amount of material removed in an alignment mark recovery process may be mitigated by selectively ashing or etching above a stop layer.

Abstract translation: 当不透明膜沉积在半导体晶片上时，潜在的对准标记可能被隐藏。 这种对准标记的再曝光是所得表面形貌的一个来源。 根据一个实施方案，嵌入在晶片中的对准标记可以通过从一个或多个层去除材料并且用透明材料代替这样的材料来暴露。 根据另一实施方式，可以通过选择性地在停止层上方进行灰化或蚀刻来减轻在对准标记恢复过程中去除的材料的量。