MECHANICAL MAGNETORESISTANCE DEVICE
    4.
    发明公开

    公开(公告)号:US20230301115A1

    公开(公告)日:2023-09-21

    申请号:US18183880

    申请日:2023-03-14

    CPC classification number: H10B61/00 H10N50/10 H10N50/01

    Abstract: The described technology provides implementations of a mechanical magnetoresistance device. The mechanical magnetoresistance device includes a first magnetoresistive well, the magnetoresistive well including at least one magnetic element and a suspension substrate, wherein the at least one magnetic element is suspended in the suspension substrate. The mechanical magnetoresistance device further includes a first conductive element in electronic communication with a first portion of the first magnetoresistive well, a second conductive element in electronic communication with a different second portion of the first magnetoresistive well, wherein the first conductive element is in electronic communication with the second conductive element via the first magnetoresistive well.

    FAULT-TOLERANT MEMORY APPLIANCE
    5.
    发明公开

    公开(公告)号:US20240220358A1

    公开(公告)日:2024-07-04

    申请号:US18400782

    申请日:2023-12-29

    CPC classification number: G06F11/1044

    Abstract: The technology disclosed herein provides a memory blade including a plurality of fabric switches configured to receive commands from a plurality of host clients, an address decoder and tracker circuit communicatively connected to the fabric switches and configured to determine the source of commands received at the fabric switches an aggregator crossbar configured to provide bandwidth aggregation between host clients and a plurality of memory modules; and a buffer module configured to couple the commands from the plurality of host clients with the plurality of memory modules.

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