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公开(公告)号：US11125836B2
公开(公告)日：2021-09-21
申请号：US15858401
申请日：2017-12-29
Applicant: Seagate Technology LLC
Inventor： Qing He , Wonjoon Jung , Mark William Covington , Mark Thomas Kief , Yonghua Chen
Abstract: A magnetic sensor comprising a first shield and a second shield and a sensor stack between the first and the second shield, the sensor stack having a plurality of layers wherein at least one layer is annealed using in-situ rapid thermal annealing. In one implementation of the magnetic sensor a seed layer is annealed using in-situ rapid thermal annealing. Alternatively, one of a barrier layer, an antiferromagnetic (AFM) layer, and a cap layer is annealed using in-situ rapid thermal annealing.
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公开(公告)号：US10054649B2
公开(公告)日：2018-08-21
申请号：US15238354
申请日：2016-08-16
Applicant: Seagate Technology, LLC
Inventor： Eric W. Singleton , Qing He , Jae-Young Yi , Matt Johnson , Zheng Gao , Dimitar V. Dimitrov , Song S. Xue
CPC classification number: G01R33/0052 , B82Y25/00 , G01R33/0076 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398
Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.
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公开(公告)号：US09165574B2
公开(公告)日：2015-10-20
申请号：US13760286
申请日：2013-02-06
Applicant: Seagate Technology LLC
Inventor： Mark William Covington , Qing He , Thomas Roy Boonstra
CPC classification number: G11B5/33 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , Y10T428/11 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1193
Abstract: An apparatus and associated method may be used to provide a data sensing element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a magnetically responsive lamination of layers and means for generating a high magnetic moment region proximal to an air bearing surface (ABS) and a low magnetic moment region proximal to a hard magnet.
Abstract translation: 可以使用装置和相关联的方法来提供能够检测磁状态的变化的数据感测元件。 本发明的各种实施例通常涉及用于产生靠近空气轴承表面（ABS）的高磁矩区域和靠近硬磁体的低磁矩区域的层的磁响应层压和装置。
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公开(公告)号：US20150097255A1
公开(公告)日：2015-04-09
申请号：US14568645
申请日：2014-12-12
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Bin Lu , Qing He , Mark Covington , Yunhao Xu , Wei Tian
CPC classification number: H01L43/08 , G01R33/098 , G11B5/3909 , G11B2005/3996 , H01L43/02
Abstract: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy.In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
Abstract translation: 在某些实施例中，隧道磁阻（TMR）传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中，传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。
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公开(公告)号：US09632149B2
公开(公告)日：2017-04-25
申请号：US14052179
申请日：2013-10-11
Applicant: Seagate Technology LLC
Inventor： Brian William Karr , Eric Walter Singleton , Qing He
CPC classification number: G01R33/098 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3912 , G11B5/3932
Abstract: A magnetic sensor includes a magnetic layer comprising magnetic material and a grain refining agent. The magnetic layer having a grain-refined magnetic layer surface. A layer adjacent the magnetic layer has a layer surface that conforms to the grain-refined magnetic layer surface.
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Patent Agency Ranking
公开(公告)号：US20160356861A1
公开(公告)日：2016-12-08
申请号：US15238354
申请日：2016-08-16
Applicant: Seagate Technology, LLC
Inventor： Eric W. Singleton , Qing He , Jae-Young Yi , Matt Johnson , Zheng Gao , Dimitar V. Dimitrov , Song S. Xue
CPC classification number: G01R33/0052 , B82Y25/00 , G01R33/0076 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398
Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap :layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.
Abstract translation: 磁传感器组件包括由磁性材料构成的第一和第二屏蔽件。 第一和第二屏蔽层定义物理屏蔽间隔。 传感器堆叠设置在第一和第二屏蔽之间，并且包括邻近第一屏蔽的种子层，与第二屏蔽相邻的盖：层和种子层与盖层之间的磁传感器。 种子层和/或盖层的至少一部分包括磁性材料，以提供小于物理屏蔽 - 屏蔽间隔的磁性传感器组件的有效的屏蔽到屏蔽间隔。
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公开(公告)号：US20180120387A1
公开(公告)日：2018-05-03
申请号：US15858401
申请日：2017-12-29
Applicant: Seagate Technology LLC
Inventor： Qing He , Wonjoon Jung , Mark William Covington , Mark Thomas Kief , Yonghua Chen
CPC classification number: G01R33/0052 , G01R33/093 , G01R33/098 , G11B5/23 , G11B5/232 , G11B5/3133 , G11B5/3143 , G11B5/3163 , Y10T29/49043 , Y10T29/49044
Abstract: A magnetic sensor comprising a first shield and a second shield and a sensor stack between the first and the second shield, the sensor stack having a plurality of layers wherein at least one layer is annealed using in-situ rapid thermal annealing. In one implementation of the magnetic sensor a seed layer is annealed using in-situ rapid thermal annealing. Alternatively, one of a barrier layer, an antiferromagnetic (AFM) layer, and a cap layer is annealed using in-situ rapid thermal annealing.
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公开(公告)号：US20180094346A1
公开(公告)日：2018-04-05
申请号：US15827755
申请日：2017-11-30
Applicant: Seagate Technology LLC
Inventor： Qing He , Jae Young Yi , Eric W. Singleton
CPC classification number: C23C14/081 , B82Y25/00 , C23C14/568 , C23C14/5806 , C23C28/32 , C23C28/322 , C23C28/345 , G11B5/3163 , G11B5/3909
Abstract: A method of making an MgO barrier layer for a TMR sensor, the method including depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.
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公开(公告)号：US09218826B1
公开(公告)日：2015-12-22
申请号：US13968539
申请日：2013-08-16
Applicant: Seagate Technology LLC
Inventor： Qing He , Mark Covington , Wonjoon Jung
CPC classification number: G11B5/3909 , G01R33/098 , G11B5/3163 , G11B5/3906 , H01L43/08 , H01L43/12
Abstract: A data storage device may be constructed as a data reader in various embodiments with a magnetic stack that has a barrier layer disposed between first and second magnetically free layers. The magnetic stack may have a horizontally symmetrical configuration that provides negative exchange coupling between the magnetically free layers.
Abstract translation: 在各种实施例中，数据存储设备可以被构造为数据读取器，其中磁堆栈具有设置在第一和第二无磁层之间的阻挡层。 磁性堆叠可以具有水平对称的构造，其在无磁层之间提供负的交换耦合。
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公开(公告)号：US09082958B2
公开(公告)日：2015-07-14
申请号：US14568645
申请日：2014-12-12
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Bin Lu , Qing He , Mark Covington , Yunhao Xu , Wei Tian
CPC classification number: H01L43/08 , G01R33/098 , G11B5/3909 , G11B2005/3996 , H01L43/02
Abstract: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
Abstract translation: 在某些实施例中，隧道磁阻（TMR）传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中，传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。
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