公开(公告)号：US20080128713A1

公开(公告)日：2008-06-05

申请号：US11790283

申请日：2007-04-24

申请人： Shinichi Saito ,  Digh Hisamoto ,  Tadashi Arai ,  Takahiro Onai

发明人： Shinichi Saito ,  Digh Hisamoto ,  Tadashi Arai ,  Takahiro Onai

IPC分类号： H01L33/00

CPC分类号： H01L33/34 ,  H01S5/3224

摘要： A light-emitting device according to the present invention includes a first electrode unit 9 for injecting an electron, a second electrode unit 10 for injecting a hole, and light-emitting units 11 and 12 electrically connected to the first electrode unit 9 and the second electrode unit 10 respectively, wherein the light-emitting units 11 and 12 are formed of single-crystal silicon, the light-emitting units 11 and 12 having a first surface (topside surface) and a second surface (underside surface) opposed to the first surface, plane orientation of the first and second surfaces being set to a (100) plane, thicknesses of the light-emitting units 11 and 12 in a direction orthogonal to the first and second surfaces being made extremely thin.

摘要翻译： 根据本发明的发光器件包括用于注入电子的第一电极单元9，用于注入孔的第二电极单元10和与第一电极单元9电连接的发光单元11和12， 电极单元10，其中发光单元11和12由单晶硅形成，发光单元11和12具有与第一表面相对的第一表面（顶侧表面）和第二表面（下表面） 第一和第二表面的表面，平面取向被设置为（100）面，发光单元11和12在与第一和第二表面正交的方向上的厚度非常薄。

公开(公告)号：US08436333B2

公开(公告)日：2013-05-07

申请号：US11790283

申请日：2007-04-24

申请人： Shinichi Saito ,  Digh Hisamoto ,  Tadashi Arai ,  Takahiro Onai

发明人： Shinichi Saito ,  Digh Hisamoto ,  Tadashi Arai ,  Takahiro Onai

IPC分类号： H01L29/06

CPC分类号： H01L33/34 ,  H01S5/3224

摘要： A light-emitting device according to the present invention includes a first electrode unit for injecting an electron, a second electrode unit for injecting a hole, and light-emitting units and electrically connected to the first electrode unit and the second electrode unit respectively, wherein the light-emitting units and are formed of single-crystal silicon, the light-emitting units and having a first surface (topside surface) and a second surface (underside surface) opposed to the first surface, plane orientation of the first and second surfaces being set to a (100) plane, thicknesses of the light-emitting units and in a direction orthogonal to the first and second surfaces being made extremely thin.

摘要翻译： 根据本发明的发光器件包括用于注入电子的第一电极单元，用于注入孔的第二电极单元和发光单元，并分别与第一电极单元和第二电极单元电连接，其中 所述发光单元由单晶硅形成，所述发光单元具有与所述第一表面相对的第一表面（顶侧表面）和第二表面（下表面），所述第一表面和所述第二表面 设置为（100）面时，发光单元的厚度和与第一表面和第二表面正交的方向的厚度非常薄。

公开(公告)号：US20050139867A1

公开(公告)日：2005-06-30

申请号：US10933338

申请日：2004-09-03

申请人： Shin-ichi Saito ,  Tadashi Arai ,  Digh Hisamoto ,  Ryuta Tsuchiya ,  Hiroshi Fukuda ,  Takahiro Onai

发明人： Shin-ichi Saito ,  Tadashi Arai ,  Digh Hisamoto ,  Ryuta Tsuchiya ,  Hiroshi Fukuda ,  Takahiro Onai

IPC分类号： H01L29/78 ,  H01L21/335 ,  H01L29/76 ,  H01L49/00

CPC分类号： H01L49/003

摘要： The Mott transistor capable of operating at a room temperature can be realized by using a self-organized nanoparticle array for the channel portion. The nanoparticle used in the present invention comprises metal and organic molecules, and the size thereof is extremely small, that is, about a few nm. Therefore, the charging energy is sufficiently larger than the thermal energy kBT=26 meV, and the transistor can operate at a room temperature. Also, since the nanoparticles with a diameter of a few nm are arranged in a self-organized manner and the Mott transition can be caused by the change of a number of electrons of the surface density of about 1012 cm−2, the transistor can operate by the gate voltage of about several V.

摘要翻译： 能够在室温下操作的莫特晶体管可以通过使用用于沟道部分的自组织纳米颗粒阵列来实现。 本发明中使用的纳米颗粒包含金属和有机分子，其尺寸非常小，即约几nm。 因此，充电能量足够大于热能k B = 26meV，并且晶体管可以在室温下工作。 此外，由于直径为几nm的纳米颗粒以自组织的方式排列，并且Mott转变可以由表面密度约为10〜12的电子数量的变化引起， cm 2，晶体管可以通过约几V的栅极电压工作。

公开(公告)号：US07700403B2

公开(公告)日：2010-04-20

申请号：US12320201

申请日：2009-01-21

申请人： Tadashi Arai ,  Shinichi Saito

发明人： Tadashi Arai ,  Shinichi Saito

IPC分类号： H01L51/40 ,  H01L21/312

CPC分类号： H01L51/0023 ,  H01L27/1225 ,  H01L29/7869 ,  H01L51/0545

摘要： When a thin film transistor is manufactured by using a printing method, the precision of alignment between a first electrode and a second electrode becomes a problem. If it is manufactured by using photolithography, a photomask for each layer is necessary, resulting in the cost being increased. The essence of the present invention is that not only processing the gate shape is carried out over the substrate by using a resist pattern formed by exposing using a photo-mask for the gate pattern but also processing the source-drain electrodes is carried out by lifting-off. As a result, alignment between the source-drain electrode and the gate electrode is carried out.

摘要翻译： 当通过使用印刷方法制造薄膜晶体管时，第一电极和第二电极之间的对准精度成为问题。 如果通过使用光刻法制造，则需要每层的光掩模，导致成本增加。 本发明的精髓在于，通过使用通过使用用于栅极图案的光掩模进行曝光而形成的抗蚀剂图案，不仅处理栅极形状，而且通过提升来进行源极 - 漏极处理 -off。 结果，进行源极 - 漏极电极和栅电极之间的对准。

公开(公告)号：US07575952B2

公开(公告)日：2009-08-18

申请号：US11797419

申请日：2007-05-03

申请人： Tadashi Arai ,  Shinichi Saito

发明人： Tadashi Arai ,  Shinichi Saito

IPC分类号： H01L51/40

CPC分类号： H01L51/102 ,  B82Y30/00 ,  H01L51/0015 ,  H01L51/0023 ,  H01L51/0545

摘要： A method of manufacturing a semiconductor device having an organic semiconductor film comprises a step of preparing a transparent substrate at least having an opaque gate electrode and a gate insulator thereover, a step of forming a layer containing metal-nano-particles as a conductive layer for a source electrode and a drain electrode to the thus prepared transparent substrate, a step of applying exposure to the transparent substrate on the side of a surface not mounted with the opaque gate electrode, a step of flushing away a portion other than the source electrode and the drain electrode in the layer containing the metal-nano-particles after the exposure, and a step of forming an organic semiconductor layer forming a channel portion. Lower and upper electrodes are positioned in self-alignment manner and thus no positional displacement occurs even if a printing method is used. Accordingly, semiconductor devices such as flexible substrates using an organic semiconductor can be manufactured inexpensively by using a printing method.

摘要翻译： 制造具有有机半导体膜的半导体器件的方法包括制备至少具有不透明栅电极和栅极绝缘体的透明基板的步骤，形成包含金属纳米颗粒的层作为导电层的步骤 源极电极和漏电极，对未形成的不透光栅电极的表面侧的透明基板进行曝光，除去源电极以外的部分的工序;以及 在曝光后含有金属 - 纳米粒子的层中的漏电极，以及形成形成沟道部分的有机半导体层的工序。 下电极和上电极以自对准方式定位，因此即使使用打印方法也不会发生位置偏移。 因此，可以通过使用印刷方法廉价地制造诸如使用有机半导体的柔性基板的半导体器件。

公开(公告)号：US20070259478A1

公开(公告)日：2007-11-08

申请号：US11797419

申请日：2007-05-03

申请人： Tadashi Arai ,  Shinichi Saito

发明人： Tadashi Arai ,  Shinichi Saito

IPC分类号： H01L51/40

CPC分类号： H01L51/102 ,  B82Y30/00 ,  H01L51/0015 ,  H01L51/0023 ,  H01L51/0545

摘要： A method of manufacturing a semiconductor device having an organic semiconductor film comprises a step of preparing a transparent substrate at least having an opaque gate electrode and a gate insulator thereover, a step of forming a layer containing metal-nano-particles as a conductive layer for a source electrode and a drain electrode to the thus prepared transparent substrate, a step of applying exposure to the transparent substrate on the side of a surface not mounted with the opaque gate electrode, a step of flushing away a portion other than the source electrode and the drain electrode in the layer containing the metal-nano-particles after the exposure, and a step of forming an organic semiconductor layer forming a channel portion. Lower and upper electrodes are positioned in self-alignment manner and thus no positional displacement occurs even if a printing method is used. Accordingly, semiconductor devices such as flexible substrates using an organic semiconductor can be manufactured inexpensively by using a printing method.

公开(公告)号：US07109072B2

公开(公告)日：2006-09-19

申请号：US11072414

申请日：2005-03-07

申请人： Shinichi Saito ,  Tadashi Arai ,  Seong-Kee Park ,  Toshiyuki Mine

发明人： Shinichi Saito ,  Tadashi Arai ,  Seong-Kee Park ,  Toshiyuki Mine

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/42392 ,  B82Y10/00 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78696 ,  Y10S977/723 ,  Y10S977/762 ,  Y10S977/932 ,  Y10S977/937

摘要： The silicon wires formed around metal particles by crystal growth have the problem of metal pollution. For its solution, in the present invention, a silicon bridge is formed through standard silicon processes such as the lithography and the wet etching using hydrofluoric acid performed to an SOI substrate. Thereafter, a thermal oxide film is desirably formed at a high temperature to form a high-quality gate insulating film. It is also desirable to form a coaxial gate electrode. Then, after burying the bridge sections of the silicon bridge in a resist film, the silicon on the bridge girders is removed, and thereafter, the silicon wires buried in the resist film are collected. In this manner, the silicon wires can be collected without dispersing into the hydrofluoric acid solution. Then, a transistor using the silicon wires as a channel is formed.

摘要翻译： 通过晶体生长在金属颗粒周围形成的硅线具有金属污染的问题。 对于其解决方案，在本发明中，通过使用对SOI衬底执行的氢氟酸的光刻和湿蚀刻的标准硅工艺形成硅桥。 此后，期望在高温下形成热氧化膜以形成高质量的栅极绝缘膜。 还希望形成同轴栅电极。 然后，在将硅桥的桥接部分埋入抗蚀剂膜中之后，除去桥梁上的硅，然后收集埋在抗蚀剂膜中的硅线。 以这种方式，可以收集硅线而不会分散到氢氟酸溶液中。 然后，形成使用硅线作为沟道的晶体管。

公开(公告)号：US20060088960A1

公开(公告)日：2006-04-27

申请号：US11072414

申请日：2005-03-07

申请人： Shinichi Saito ,  Tadashi Arai ,  Seong-Kee Park ,  Toshiyuki Mine

发明人： Shinichi Saito ,  Tadashi Arai ,  Seong-Kee Park ,  Toshiyuki Mine

IPC分类号： H01L21/84 ,  H01L21/302

CPC分类号： H01L29/42392 ,  B82Y10/00 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78696 ,  Y10S977/723 ,  Y10S977/762 ,  Y10S977/932 ,  Y10S977/937

摘要： The silicon wires formed around metal particles by crystal growth have the problem of metal pollution. For its solution, in the present invention, a silicon bridge is formed through standard silicon processes such as the lithography and the wet etching using hydrofluoric acid performed to an SOI substrate. Thereafter, a thermal oxide film is desirably formed at a high temperature to form a high-quality gate insulating film. It is also desirable to form a coaxial gate electrode. Then, after burying the bridge sections of the silicon bridge in a resist film, the silicon on the bridge girders is removed, and thereafter, the silicon wires buried in the resist film are collected. In this manner, the silicon wires can be collected without dispersing into the hydrofluoric acid solution. Then, a transistor using the silicon wires as a channel is formed.

公开(公告)号：US20090215222A1

公开(公告)日：2009-08-27

申请号：US12320201

申请日：2009-01-21

申请人： Tadashi Arai ,  Shinichi Saito

发明人： Tadashi Arai ,  Shinichi Saito

IPC分类号： H01L51/40 ,  H01L21/312

CPC分类号： H01L51/0023 ,  H01L27/1225 ,  H01L29/7869 ,  H01L51/0545

摘要： When a thin film transistor is manufactured by using a printing method, the precision of alignment between a first electrode and a second electrode becomes a problem. If it is manufactured by using photolithography, a photomask for each layer is necessary, resulting in the cost being increased. The essence of the present invention is that not only processing the gate shape is carried out over the substrate by using a resist pattern formed by exposing using a photo-mask for the gate pattern but also processing the source-drain electrodes is carried out by lifting-off. As a result, alignment between the source-drain electrode and the gate electrode is carried out.

摘要翻译： 当通过使用印刷方法制造薄膜晶体管时，第一电极和第二电极之间的对准精度成为问题。 如果通过使用光刻法制造，则需要每层的光掩模，导致成本增加。 本发明的精髓在于，通过使用通过使用用于栅极图案的光掩模进行曝光而形成的抗蚀剂图案，不仅处理栅极形状，而且通过提升来进行源极 - 漏极处理 -off。 结果，进行源极 - 漏极电极和栅电极之间的对准。

公开(公告)号：US20070178616A1

公开(公告)日：2007-08-02

申请号：US11591564

申请日：2006-11-02

申请人： Tadashi Arai ,  Shinichi Saito

发明人： Tadashi Arai ,  Shinichi Saito

IPC分类号： H01L21/00

CPC分类号： H01L51/102 ,  B82Y30/00 ,  H01L51/0015 ,  H01L51/0023 ,  H01L51/0545

摘要： A method of manufacturing a semiconductor device having an organic semiconductor film comprises a step of preparing a transparent substrate at least having an opaque gate electrode and a gate insulator thereover, a step of forming a layer containing metal-nano-particles as a conductive layer for a source electrode and a drain electrode to the thus prepared transparent substrate, a step of applying exposure to the transparent substrate on the side of a surface not mounted with the opaque gate electrode, a step of flushing away a portion other than the source electrode and the drain electrode in the layer containing the metal-nano-particles after the exposure, and a step of forming an organic semiconductor layer forming a channel portion. Lower and upper electrodes are positioned in self-alignment manner and thus no positional displacement occurs even if a printing method is used. Accordingly, semiconductor devices such as flexible substrates using an organic semiconductor can be manufactured inexpensively by using a printing method.

摘要翻译： 制造具有有机半导体膜的半导体器件的方法包括制备至少具有不透明栅电极和栅极绝缘体的透明基板的步骤，形成包含金属纳米颗粒的层作为导电层的步骤 源极电极和漏电极，对未形成的不透光栅电极的表面侧的透明基板进行曝光，除去源电极以外的部分的工序;以及 在曝光后含有金属 - 纳米粒子的层中的漏电极，以及形成形成沟道部分的有机半导体层的工序。 下电极和上电极以自对准方式定位，因此即使使用打印方法也不会发生位置偏移。 因此，可以通过使用印刷方法廉价地制造诸如使用有机半导体的柔性基板的半导体器件。