利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.04 秒)

    Semiconductor material, field effect transistor and manufacturing method thereof
    1.
    发明授权
    Semiconductor material, field effect transistor and manufacturing method thereof 失效
    半导体材料，场效应晶体管及其制造方法

    公开(公告)号：US07109072B2

    公开(公告)日：2006-09-19

    申请号：US11072414

    申请日：2005-03-07

    申请人： Shinichi Saito ,  Tadashi Arai ,  Seong-Kee Park ,  Toshiyuki Mine

    发明人： Shinichi Saito ,  Tadashi Arai ,  Seong-Kee Park ,  Toshiyuki Mine

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L29/42392 ,  B82Y10/00 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78696 ,  Y10S977/723 ,  Y10S977/762 ,  Y10S977/932 ,  Y10S977/937

    摘要： The silicon wires formed around metal particles by crystal growth have the problem of metal pollution. For its solution, in the present invention, a silicon bridge is formed through standard silicon processes such as the lithography and the wet etching using hydrofluoric acid performed to an SOI substrate. Thereafter, a thermal oxide film is desirably formed at a high temperature to form a high-quality gate insulating film. It is also desirable to form a coaxial gate electrode. Then, after burying the bridge sections of the silicon bridge in a resist film, the silicon on the bridge girders is removed, and thereafter, the silicon wires buried in the resist film are collected. In this manner, the silicon wires can be collected without dispersing into the hydrofluoric acid solution. Then, a transistor using the silicon wires as a channel is formed.

    摘要翻译： 通过晶体生长在金属颗粒周围形成的硅线具有金属污染的问题。 对于其解决方案，在本发明中，通过使用对SOI衬底执行的氢氟酸的光刻和湿蚀刻的标准硅工艺形成硅桥。 此后，期望在高温下形成热氧化膜以形成高质量的栅极绝缘膜。 还希望形成同轴栅电极。 然后，在将硅桥的桥接部分埋入抗蚀剂膜中之后，除去桥梁上的硅，然后收集埋在抗蚀剂膜中的硅线。 以这种方式，可以收集硅线而不会分散到氢氟酸溶液中。 然后，形成使用硅线作为沟道的晶体管。

    REFLECTIVE ELECTRODE AND PHOTOELECTRIC ELEMENT
    3.
    发明申请
    REFLECTIVE ELECTRODE AND PHOTOELECTRIC ELEMENT 审中-公开
    反射电极和光电元件

    公开(公告)号：US20110259414A1

    公开(公告)日：2011-10-27

    申请号：US13089904

    申请日：2011-04-19

    申请人： Jung-Shik Lim ,  Seong-Kee Park ,  Jae-Hyun Kim ,  Sun-Man Kim ,  Tae-Young Lee ,  Min-Cheol Kim

    发明人： Jung-Shik Lim ,  Seong-Kee Park ,  Jae-Hyun Kim ,  Sun-Man Kim ,  Tae-Young Lee ,  Min-Cheol Kim

    IPC分类号： H01L31/0224 ,  H01L31/0236

    CPC分类号： H01L31/056 ,  Y02E10/52

    摘要： A reflective electrode which can be provided in a photoelectric element such as light emitting diode or solar cell is disclosed. The reflective electrode include a plurality of conductive material layers electrically connected with a semiconductor layer used as light absorbing layer or active layer of the photoelectric element; and at least one metal film arranged between neighboring two of the plurality of the conductive material layers. Here, the plurality of the conductive material layers are formed of a conductive material having a lower refraction index than a refraction index of the semiconductor layer, and one of the conductive material layers which directly contacts with the semiconductor layer is formed of a conductive material having a lower contact resistance than a contact resistance of a metal with the semiconductor layer.

    摘要翻译： 公开了可以设置在诸如发光二极管或太阳能电池的光电元件中的反射电极。 反射电极包括与用作光吸收层或光电元件的有源层的半导体层电连接的多个导电材料层; 以及布置在所述多个导电材料层中的相邻两个之间的至少一个金属膜。 这里，多个导电材料层由具有比半导体层的折射率低的折射率的导电材料形成，并且与半导体层直接接触的一个导电材料层由导电材料形成，该导电材料具有 比具有半导体层的金属的接触电阻低的接触电阻。

    Thin film semiconductor device containing polycrystalline Si—Ge alloy and method for producing thereof
    5.
    发明授权
    Thin film semiconductor device containing polycrystalline Si—Ge alloy and method for producing thereof 有权
    含有多晶Si-Ge合金的薄膜半导体器件及其制造方法

    公开(公告)号：US06716726B2

    公开(公告)日：2004-04-06

    申请号：US10277140

    申请日：2002-10-22

    申请人： Shinya Yamaguchi ,  Takeo Shiba ,  Mutsuko Hatano ,  Seong-Kee Park

    发明人： Shinya Yamaguchi ,  Takeo Shiba ,  Mutsuko Hatano ,  Seong-Kee Park

    IPC分类号： H01L2120

    CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78684 ,  Y10S438/933

    摘要： The present invention relates to a thin film transistor, in a low-temperature poly-Si thin film becoming an elemental material of the thin film transistor, an object of the invention is to provide the thin film transistor suitable for realizing an image display device having a high performance and a large area at low cost by realizing a poly-crystalline thin film having a crystal structure restraining current scattering in a grain boundary, lessening surface roughness, and capable of realizing high mobility even to a positive hole current. The object described above is achieved by realizing a TFT with high mobility by restraining a current scattering factor in a grain boundary of crystal with an introduction of Ge into the poly-crystalline Si thin film and with a difference in ratios of Ge compositions between an interior grain of crystal and a grain boundary of crystal resulted from a phase separation involved in crystallization, and by restraining surface roughness using a difference in volumes in a crystal.

    摘要翻译： 薄膜晶体管本发明涉及一种成为薄膜晶体管的元素材料的低温多晶硅薄膜中的薄膜晶体管，其目的在于提供一种薄膜晶体管，其适用于实现具有 通过实现具有抑制晶界中的电流散射的晶体结构的多晶薄膜，降低表面粗糙度，并且即使对于空穴电流也能实现高迁移率，因此具有高性能和大面积的低成本。目的描述 通过在晶体的晶界中抑制电流散射因子，通过在多晶Si薄膜中引入Ge并且在晶体的内部晶粒之间的Ge组成的比率的差异来实现具有高迁移率的TFT， 并且晶体的晶界由结晶涉及的相分离产生，并且通过使用差异来抑制表面粗糙度 在一个水晶体积。

    Method of manufacturing a thin film solar cell
    8.
    发明申请
    Method of manufacturing a thin film solar cell 有权
    制造薄膜太阳能电池的方法

    公开(公告)号：US20100197072A1

    公开(公告)日：2010-08-05

    申请号：US12591943

    申请日：2009-12-04

    申请人： Tae-Youn Kim ,  Won-Seo Park ,  Jeong-Woo Lee ,  Seong-Kee Park ,  Kyung-Jin Shim

    发明人： Tae-Youn Kim ,  Won-Seo Park ,  Jeong-Woo Lee ,  Seong-Kee Park ,  Kyung-Jin Shim

    IPC分类号： H01L31/18

    CPC分类号： H01L31/056 ,  H01L31/046 ,  H01L31/0463 ,  Y02E10/52

    摘要： A method of manufacturing a thin film solar cell includes steps of preparing a substrate on which unit cells are defined, forming transparent conducive layers on the substrate and corresponding to the unit cells, respectively, the transparent conductive layers spaced apart from each other with a first separation line therebetween, forming light-absorbing layers on the transparent conductive layers and corresponding to the unit cells, respectively, the light-absorbing layers spaced apart from each other with a second separation line therebetween, forming a third separation line in each of the light-absorbing layers, the third separation line spaced apart from the second separation line, forming a reflection material layer by disposing a silk screen over the third separation line and applying a conductive paste, and forming reflection electrodes corresponding to the unit cells, respectively, by sintering the reflection material layer.

    摘要翻译： 制造薄膜太阳能电池的方法包括以下步骤：准备在其上限定单元电池的基板，分别在基板上形成透明导电层并对应于单元电池，所述透明导电层分别与第一 在其间分别在透明导电层上形成光吸收层并分别对应于单元电池，其间的光吸收层彼此间隔开第二分隔线，在每个光线中形成第三分隔线 吸收层，第三分离线与第二分离线间隔开，通过在第三分离线上设置丝网并施加导电浆料形成反射材料层，并分别形成与单元电池对应的反射电极，通过 烧结反射材料层。

    DYE-SENSITIZED SOLAR CELL
    10.
    发明申请
    DYE-SENSITIZED SOLAR CELL 审中-公开
    透明的太阳能电池

    公开(公告)号：US20110155237A1

    公开(公告)日：2011-06-30

    申请号：US12976570

    申请日：2010-12-22

    申请人： Noh-Jin Myung ,  Seong-Kee Park ,  Sung-Hoon Joo ,  Seung-Hoon Ryu ,  So-Mi Jeong

    发明人： Noh-Jin Myung ,  Seong-Kee Park ,  Sung-Hoon Joo ,  Seung-Hoon Ryu ,  So-Mi Jeong

    IPC分类号： H01L31/0224 ,  H01L51/44

    CPC分类号： H01G9/2068 ,  Y02E10/542 ,  Y02P70/521

    摘要： Disclosed is a dye-sensitized solar cell capable of improving fill factor of current, the solar cell including a first substrate and a second substrate, a first electrode formed on the first substrate, a second electrode formed on the second substrate to face the first electrode, an electrolyte interposed between the first and second electrodes, first and second electron collection metal lines formed between the first and second electrodes to collect electrons generated, passivation layers to shield the first and second electron collection metal lines, respectively, and a seal line formed on edge regions of the first and second substrates to bond the first and second substrates to each other and seal the electrolyte, wherein each of the passivation layers has a softening point higher than that of the seal line.

    摘要翻译： 公开了能够改善电流的填充因子的染料敏化太阳能电池，太阳能电池包括第一基板和第二基板，形成在第一基板上的第一电极，形成在第二基板上以面对第一电极的第二电极 插入在第一和第二电极之间的电解质，形成在第一和第二电极之间的第一和第二电子收集金属线分别收集产生的电子，分别屏蔽第一和第二电子收集金属线的钝化层和形成的密封线 在第一和第二基板的边缘区域上，以将第一和第二基板彼此粘合并密封电解质，其中每个钝化层的软化点高于密封线的软化点。