公开(公告)号：US07573109B2

公开(公告)日：2009-08-11

申请号：US11528654

申请日：2006-09-28

申请人： Shinji Kunori ,  Hiroaki Shishido ,  Masato Mikawa ,  Kosuke Ohshima ,  Masahiro Kuriyama ,  Mizue Kitada

发明人： Shinji Kunori ,  Hiroaki Shishido ,  Masato Mikawa ,  Kosuke Ohshima ,  Masahiro Kuriyama ,  Mizue Kitada

IPC分类号： H01L29/76

CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/47 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7809 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having high withstand strength against destruction. The semiconductor device 1 includes guard buried regions 44b of second conductivity type concentrically provided on a resistance layer 15 of first conductivity type and base diffusion regions 17a are provided inside of the guard buried region 44b and base buried regions 44a of the second conductivity type are provided on the bottom surface of the base diffusion regions 17a. A distance between adjacent base buried regions 44a at the bottom of the same base diffusion region 17a is Wm1, a distance between adjacent base buried regions 44a at the bottom of the different base diffusion regions 17a is Wm2, and a distance between the guard buried regions 44b is WPE. A ratio of an impurity quantity Q1 of the first conductivity type and an impurity quantity Q2 of the second conductivity type included inside the widthwise center of the innermost guard buried region 44b is 0.90

摘要翻译： 具有高抗破坏性能的半导体器件。 半导体器件1包括同心地设置在第一导电类型的电阻层15上的第二导电类型的保护掩埋区域44b，并且在保护掩埋区域44b的内侧设置有基极扩散区域17a，并且设置第二导电类型的基极掩埋区域44a 在基底扩散区域17a的底面上。 在相同的基底扩散区域17a的底部的相邻的基底掩埋区域44a之间的距离为Wm1，不同的基底扩散区域17a的底部的相邻的基底掩埋区域44a之间的距离为Wm2， 44b是WPE。 当Wm1

公开(公告)号：US20070069323A1

公开(公告)日：2007-03-29

申请号：US11528654

申请日：2006-09-28

申请人： Shinji Kunori ,  Hiroaki Shishido ,  Masato Mikawa ,  Kosuke Ohshima ,  Masahiro Kuriyama ,  Mizue Kitada

发明人： Shinji Kunori ,  Hiroaki Shishido ,  Masato Mikawa ,  Kosuke Ohshima ,  Masahiro Kuriyama ,  Mizue Kitada

IPC分类号： H01L23/58

CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/47 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7809 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having high withstand strength against destruction. The semiconductor device 1 includes guard buried regions 44b of second conductivity type concentrically provided on a resistance layer 15 of first conductivity type and base diffusion regions 17a are provided inside of the guard buried region 44b and base buried regions 44a of the second conductivity type are provided on the bottom surface of the base diffusion regions 17a. A distance between adjacent base buried regions 44a at the bottom of the same base diffusion region 17a is Wm1, a distance between adjacent base buried regions 44a at the bottom of the different base diffusion regions 17a is Wm2, and a distance between the guard buried regions 44b is WPE. A ratio of an impurity quantity Q1 of the first conductivity type and an impurity quantity Q2 of the second conductivity type included inside the widthwise center of the innermost guard buried region 44b is 0.90

摘要翻译： 具有高抗破坏性能的半导体器件。 半导体器件1包括同心地设置在第一导电类型的电阻层15上的第二导电类型的保护掩埋区域44b，并且在保护掩埋区域44b的内部设置基极扩散区域17a，并且在第二导电类型的第二导电类型的基极掩埋区域44a 导电类型设置在基底扩散区域17a的底表面上。 在相同的基底扩散区域17a的底部的相邻的基底掩埋区域44a之间的距离为W m 1，在不同的基底扩散区域17的底部的相邻的基底掩埋区域44a之间的距离 a是Wm 2 2，并且防护埋入区域44b之间的距离是W PE 2 。 第一导电类型的杂质量Q <1> 1和第二导电类型的杂质量Q 2> 2 的比率包括在最内侧保护埋入区44的宽度方向中心的内侧 当Wm <1时，b是0.90 。 当W 1 2 时，该比例为Q 2 / Q 1 /SUB><0.92当WM 2 PE 时，该比例为1.10 / Q <1> 。

公开(公告)号：US07282764B2

公开(公告)日：2007-10-16

申请号：US11481247

申请日：2006-07-06

申请人： Shinji Kunori ,  Hiroaki Shishido ,  Masato Mikawa ,  Kosuke Ohshima ,  Masahiro Kuriyama ,  Mizue Kitada

发明人： Shinji Kunori ,  Hiroaki Shishido ,  Masato Mikawa ,  Kosuke Ohshima ,  Masahiro Kuriyama ,  Mizue Kitada

IPC分类号： H01L29/76

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/47 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7809

摘要： A semiconductor device having high ruggedness is provided. The distance Wm2 between buried regions, positioned at the bottoms of different base diffusion regions and face each other, is set smaller than the distance Wm1 between buried regions positioned at the bottom of the same base diffusion region (Wm1>Wm2). An avalanche breakdown occurs under the bottom of the base diffusion region, and the avalanche current is not passed through a high resistance part immediately under the source diffusion region in the base diffusion region, thereby providing high withstand strength against destruction.

摘要翻译： 提供了具有高耐久性的半导体器件。 位于不同基底扩散区域的底部并且彼此面对的掩埋区域之间的距离Wm2 <2>被设定为小于位于该掩埋区域的掩埋区域之间的距离Wm1 < 相同的基底扩散区域（Wm1 Wm2）的底部。 在基底扩散区域的底部发生雪崩击穿，并且雪崩电流不通过在基底扩散区域中的源极扩散区域的正下方的高电阻部分，从而提供高的抗破坏强度。

公开(公告)号：US20070045776A1

公开(公告)日：2007-03-01

申请号：US11481247

申请日：2006-07-06

申请人： Shinji Kunori ,  Hiroaki Shishido ,  Masato Mikawa ,  Kosuke Ohshima ,  Masahiro Kuriyama ,  Mizue Kitada

发明人： Shinji Kunori ,  Hiroaki Shishido ,  Masato Mikawa ,  Kosuke Ohshima ,  Masahiro Kuriyama ,  Mizue Kitada

IPC分类号： H01L31/11

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/47 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7809

摘要： A semiconductor device having high ruggedness is provided. The distance Wm2 between buried regions, positioned at the bottoms of different base diffusion regions and face each other, is set smaller than the distance Wm1 between buried regions positioned at the bottom of the same base diffusion region (Wm1>Wm2). An avalanche breakdown occurs under the bottom of the base diffusion region, and the avalanche current is not passed through a high resistance part immediately under the source diffusion region in the base diffusion region, thereby providing high withstand strength against destruction.

公开(公告)号：US07365391B2

公开(公告)日：2008-04-29

申请号：US11528637

申请日：2006-09-28

申请人： Toru Kurosaki ,  Shinji Kunori ,  Mizue Kitada ,  Kosuke Ohshima ,  Hiroaki Shishido ,  Masato Mikawa

发明人： Toru Kurosaki ,  Shinji Kunori ,  Mizue Kitada ,  Kosuke Ohshima ,  Hiroaki Shishido ,  Masato Mikawa

IPC分类号： H01L31/00

CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/4238 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device having high withstand voltage is provided. An active groove 22a includes a long and narrow main groove part 26 and a sub groove part 27 connected to a longitudinal side surface of the main groove part, and a buried region 24 of a second conductivity type whose height is lower than the bottom surface of the base diffusion region 32a of the second conductivity type is provided on the bottom surface of the main groove part 26. An active groove filling region 25 of the second conductivity type in contact with the base diffusion region 32a is provided in the sub groove part 27. The buried region 24 is contacted to the base diffusion region 32a through the active groove filling region 25. Since one gate groove 83 is formed by the part above the buried region 24 in one active groove 22a, the gate electrode plugs 48 are not separated, which allows the electrode pattern to be simplified.

摘要翻译： 提供具有高耐压的半导体器件。 活动槽22a包括长而窄的主槽部26和与主槽部的纵向侧面连接的副槽部27以及高度低于底面的第二导电型的埋入区域24 第二导电类型的基底扩散区域32a设置在主槽部分26的底表面上。 在子槽部27中设置有与基底扩散区域32a相接触的第二导电类型的活动沟槽填充区域25。 埋入区域24通过有源沟槽填充区域25与基极扩散区域32a接触。 由于一个栅极沟槽83由一个有源槽22a中的掩埋区域24上方的部分形成，所以栅电极插塞48不分离，这允许电极图案被简化。

公开(公告)号：US20070045726A1

公开(公告)日：2007-03-01

申请号：US11528637

申请日：2006-09-28

申请人： Toru Kurosaki ,  Shinji Kunori ,  Mizue Kitada ,  Kosuke Ohshima ,  Hiroaki Shishido ,  Masato Mikawa

发明人： Toru Kurosaki ,  Shinji Kunori ,  Mizue Kitada ,  Kosuke Ohshima ,  Hiroaki Shishido ,  Masato Mikawa

IPC分类号： H01L29/94

CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/4238 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device having high withstand voltage is provided. An active groove 22a includes a long and narrow main groove part 26 and a sub groove part 27 connected to a longitudinal side surface of the main groove part, and a buried region 24 of a second conductivity type whose height is lower than the bottom surface of the base diffusion region 32a of the second conductivity type is provided on the bottom surface of the main groove part 26. An active groove filling region 25 of the second conductivity type in contact with the base diffusion region 32a is provided in the sub groove part 27. The buried region 24 is contacted to the base diffusion region 32a through the active groove filling region 25. Since one gate groove 83 is formed by the part above the buried region 24 in one active groove 22a, the gate electrode plugs 48 are not separated, which allows the electrode pattern to be simplified.

摘要翻译： 提供具有高耐压的半导体器件。 活动槽22a包括长而窄的主槽部26和与主槽部的纵向侧面连接的副槽部27以及高度低于底面的第二导电型的埋入区域24 第二导电类型的基底扩散区域32a设置在主槽部分26的底表面上。 在子槽部27中设置有与基底扩散区域32a相接触的第二导电类型的活动沟槽填充区域25。 埋入区域24通过有源沟槽填充区域25与基极扩散区域32a接触。 由于一个栅极沟槽83由一个有源槽22a中的掩埋区域24上方的部分形成，所以栅电极插塞48不分离，这允许电极图案被简化。

公开(公告)号：US20100233616A1

公开(公告)日：2010-09-16

申请号：US12308659

申请日：2007-06-25

申请人： Takaaki Kobayashi ,  Masato Mikawa

发明人： Takaaki Kobayashi ,  Masato Mikawa

IPC分类号： G03F7/004 ,  G03F7/20 ,  B29D11/00

CPC分类号： G03F7/0757 ,  C08G77/16 ,  C08G77/18 ,  C08G77/20 ,  C08L83/04 ,  G02B1/041 ,  G02B1/043 ,  G03F7/0388 ,  G03F7/0758 ,  C08L51/085 ,  C08L83/00

摘要： Disclosed is a method for producing a plastic lens having reflow heat resistance at 260° C., which is characterized in that a photosensitive resin composition containing a specific resin and a photopolymerization initiator is molded into a lens shape. The resin is obtained by mining one or more compounds (a) selected from the group consisting of (CH3O)3—Si—(CH2)3—O—CO—C(CH3)═CH2, (CH3O)3—Si—(CH2)3—O—CO—CH═CH2, (CH3O)3—Si—(CH2)x—CH═CH2 (wherein X is 1 or 2), (CH3O)2—Si(CH3)(CH2)3—O—CO—C(CH3)═CH2, (CH3O)2—Si(CH3)(CH2)3—O—CO—CH═CH2 and (CH3O)2—Si(CH3)—(CH2)x—CH═CH2 (wherein X is 1 or 2) with a compound (b) represented by (C6H5)2—Si—(OH)2 such that 50-150 moles of the compounds (a) is mixed per 100 moles of the compound (b), and then polycondensing the mixture at 40-15° C. for 0.1-10 hours in the presence of a catalyst.

摘要翻译： 公开了一种在260℃下具有回流耐热性的塑料透镜的制造方法，其特征在于，将含有特定树脂和光聚合引发剂的感光性树脂组合物成型为透镜状。 树脂通过采用一种或多种选自（CH 3 O）3 -Si-（CH 2）3 -O-CO-C（CH 3）= CH 2，（CH 3 O）3 -Si（（CH 3） （CH 3）3-Si-（CH 2）x -CH 2 CH 2（其中X为1或2），（CH 3 O）2 -Si（CH 3）（CH 2）3 - O-CO-C（CH 3）= CH 2，（CH 3 O）2 -Si（CH 3）（CH 2）3 -O-CO-CH = CH 2和（CH 3 O）2-Si（CH 3） - （CH 2）x-CH = CH2（其中X为1或2）与（C6H5）2-Si-（OH）2表示的化合物（b）的混合，使得每100摩尔化合物（b）混合50-150摩尔的化合物 ），然后在催化剂存在下，将混合物在40-15℃下缩聚0.1-10小时。

公开(公告)号：US20100019399A1

公开(公告)日：2010-01-28

申请号：US12441355

申请日：2007-09-28

申请人： Masashi Kimura ,  Masato Mikawa ,  Hideyuki Fujiyama ,  Takaaki Kobayashi ,  Tomohiro Yorisue

发明人： Masashi Kimura ,  Masato Mikawa ,  Hideyuki Fujiyama ,  Takaaki Kobayashi ,  Tomohiro Yorisue

IPC分类号： H01L23/29 ,  C08F283/12 ,  G02B1/12 ,  G03F7/00 ,  C08J7/04 ,  B05D3/02

CPC分类号： C08F290/148 ,  C08F283/12 ,  C08G77/20 ,  C08G77/58 ,  C08L51/085 ,  C09D151/085 ,  C09D183/14 ,  G03F7/0757 ,  C08L2666/02 ,  C08L83/00

摘要： Disclosed is a polyorganosiloxane composition containing the following components (a)-(c). (a) 100 parts by mass of a polyorganosiloxane obtained by mixing at least one silanol compound represented by the general formula (1) below, at least one alkoxysilane compound represented by the general formula (2) below, and at least one catalyst selected from the group consisting of compounds represented by the general formula (3) below, compounds represented by the general formula (4) below and Ba(OH)2, and polymerizing the mixture without actively adding water thereinto [chemical formula 1] R2Si(OH)2 (1) [chemical formula 2] R′Si(OR″)3 (2) (chemical formula 3] M(OR′″)4 (3) [chemical formula 4] M′(OR″″)3 (4) (b) 0.1-20 parts by mass of a photopolymerization initiator (c) 1-100 parts by mass of a compound other than the component (a) having two or more photopolymerizable unsaturated bonding groups.

摘要翻译： 公开了含有以下组分（a） - （c）的聚有机硅氧烷组合物。 （a）100质量份通过将至少一种下述通式（1）表示的硅烷醇化合物，至少一种下述通式（2）表示的烷氧基硅烷化合物和至少一种选自以下通式（2）的催化剂得到的聚有机硅氧烷， 由下述通式（3）表示的化合物，下述通式（4）表示的化合物和Ba（OH）2组成的组，并且在不主动加入水的情况下聚合该混合物[化学式1] R 2 Si（OH） 2（1）[化学式2] R'Si（OR“）3（2）（化学式3）M（OR”'）4（3）[化学式4] M'（OR“ ）3（4）（b）0.1-20质量份光聚合引发剂（c）1-100质量份除了具有两个或更多个光聚合性不饱和键合基团的组分（a）以外的化合物。