公开(公告)号：US5554875A

公开(公告)日：1996-09-10

申请号：US486156

申请日：1995-06-07

Applicant: Siegbert Hartauer

Inventor： Siegbert Hartauer

IPC: B81B3/00 ,  G01L1/18 ,  G01P15/08 ,  G01P15/12 ,  G01P15/125 ,  H01L29/82

CPC classification number: B81C1/00246 ,  G01L1/18 ,  G01P15/0802 ,  G01P15/123 ,  G01P15/125 ,  B81B2201/0235 ,  B81B2203/0109 ,  B81B2203/0315 ,  B81C2201/0136 ,  B81C2201/014 ,  B81C2203/0728 ,  B81C2203/0735

Abstract: A semiconductor device with a force and/or acceleration sensor (12), which has a spring-mass system (14, 16) responsive to the respective quantity to be measured and whose mass (16) bears via at least one resilient support element (14) on a semiconductor substrate (20). The semiconductor substrate (20) and the spring-mass system (14, 16) are integral components of a monocrystalline semiconductor crystal (10) with a IC-compatible structure. The three-dimensional structural form of the spring-mass system (12) is produced by anisotropic semiconductor etching, defined P/N junctions of the semiconductor layer arrangement functioning as etch stop means in order to more particularly create a gap (22) permitting respective movement of the mass (16) between the mass (16) and the semiconductor substrate (20).

Abstract translation: 一种具有力和/或加速度传感器（12）的半导体器件，其具有响应于待测量的相应量的弹簧质量系统（14,16），并且其质量（16）经由至少一个弹性支撑元件（ 14）在半导体衬底（20）上。 半导体衬底（20）和弹簧质量系统（14,16）是具有IC兼容结构的单晶半导体晶体（10）的组成部分。 通过各向异性半导体蚀刻制造弹簧质量体系（12）的三维结构形式，作为蚀刻停止装置的半导体层布置的限定的P / N结，以更具体地形成允许相应的间隙（22） 质量块（16）和半导体衬底（20）之间的质量块（16）的移动。

公开(公告)号：US5514898A

公开(公告)日：1996-05-07

申请号：US416548

申请日：1995-04-03

Applicant: Siegbert Hartauer

Inventor： Siegbert Hartauer

IPC: G01L9/04 ,  G01L9/00 ,  H01L29/84 ,  H01L29/82

CPC classification number: G01L9/0054 ,  G01L9/0042 ,  Y10S438/977

Abstract: A semiconductor device comprises a piezoresistive pressure sensor (12), which has a membrane (14), which is constituted by a conducting epitaxy layer (16), which is applied to a conducting semiconductor substrate (18) of the opposite conductivity. On the outer surface (20) of the membrane facing away from the semiconductor substrate (18) at least one piezoresistor (22) is incorporated. Between the semiconductor substrate (18) and the epitaxy layer (16) an annularly structured intermediate layer (28) is incorporated, which defines a region (26'), adjoining the inner surface (24) of the membrane, of an opening (26) extending through the semiconductor substrate (18). This opening (26) is produced by anisotropic semiconductor etching, the intermediate layer (28) having a conductivity which is opposite to that of the semiconductor substrate so that this intermediate layer (28) functions as an etch stopping means and is not attacked by the etchant.

Abstract translation: 半导体器件包括压阻式压力传感器（12），其具有由导电外延层（16）构成的膜（14），其被施加到具有相反导电性的导电半导体衬底（18）。 在膜的远离半导体衬底（18）的外表面（20）上并入至少一个压敏电阻（22）。 在半导体衬底（18）和外延层（16）之间，结合有环形结构的中间层（28），其限定邻近膜的内表面（24）的开口（26）的区域（26'） ）延伸穿过半导体衬底（18）。 该开口（26）通过各向异性半导体蚀刻制造，中间层（28）具有与半导体衬底相反的导电性，使得该中间层（28）用作蚀刻停止装置，并且不被 蚀刻剂

公开(公告)号：US5412986A

公开(公告)日：1995-05-09

申请号：US631563

申请日：1990-12-21

Applicant: Steven Beringhause ,  W. Donald Rolph, III ,  Raymond E. Mandeville ,  Siegbert Hartauer ,  Vaclav F. Vilimek

Inventor： Steven Beringhause ,  W. Donald Rolph, III ,  Raymond E. Mandeville ,  Siegbert Hartauer ,  Vaclav F. Vilimek

IPC: G01P15/12 ,  H01L29/84 ,  G01D15/12

CPC classification number: G01P15/123

Abstract: An accelerometer device comprises a silicon semiconductor member having a mass mounted on a support by integral beams extending between the mass and support to permit movement of the mass in response to acceleration. Piezoresistive sensors are accommodated in the beams for sensing strain in the beams during movement of the mass to provide an output signal from the device corresponding to the acceleration. The beams each have an end secured to the support and an end secured to the mass and taper intermediate the beam ends to provide a high and substantially uniform strain throughout the tapered section of the beam. The piezoresistive sensor is accommodated in the tapered beam section to be responsive to that high, uniform strain. Preferably the member has four beams mounting the mass, each beam has a tapered section extending from each end of the beam toward the center of the beam, and each beam section has a piezoresistive sensor accommodated therein to be responsive to the uniform strain within that beam section. The piezoresistive sensors are conveniently interconnected to compensate for off-axis acceleration in one direction by compensation within each leg of a bridge circuit and to compensate for off-axis acceleration in another direction by compensation within the full bridge circuit.

Abstract translation: 加速度计装置包括硅半导体构件，其具有通过在质量块和支撑件之间延伸的整体梁安装在支撑件上的质量，以允许质量块响应于加速度的移动。 压阻传感器容纳在梁中，用于在质量块移动期间感测梁中的应变，以提供来自与加速度相对应的装置的输出信号。 每个梁各自具有固定到支撑件的端部，并且固定到质量体的端部和在梁端部之间的锥形的端部，以在梁的整个锥形部分中提供高且基本上均匀的应变。 压阻传感器容纳在锥形梁部分中以响应于该高的均匀应变。 优选地，构件具有安装质量块的四个梁，每个梁具有从梁的每个端部朝向梁的中心延伸的锥形部分，并且每个梁部分具有容纳在其中的压阻传感器，以响应于该梁内的均匀应变 部分。 压阻式传感器方便地互连，通过在桥接电路的每个支路内进行补偿来补偿一个方向的离轴加速度，并且通过在全桥电路内的补偿来补偿另一个方向上的离轴加速度。

公开(公告)号：US5840597A

公开(公告)日：1998-11-24

申请号：US789515

申请日：1997-01-27

Applicant: Siegbert Hartauer

Inventor： Siegbert Hartauer

IPC: B81B3/00 ,  G01L1/18 ,  G01P15/08 ,  G01P15/12 ,  G01P15/125 ,  H01L21/00

CPC classification number: B81C1/00246 ,  G01L1/18 ,  G01P15/0802 ,  G01P15/123 ,  G01P15/125 ,  B81B2201/0235 ,  B81B2203/0109 ,  B81B2203/0315 ,  B81C2201/0136 ,  B81C2201/014 ,  B81C2203/0728 ,  B81C2203/0735

Abstract: A semiconductor device with a force and/or acceleration sensor (12), which has a spring-mass system (14, 16) responsive to the respective quantity to be measured and whose mass (16) bears via at least one resilient support element (14) on a semiconductor substrate (20). The semiconductor substrate (20) and the spring-mass system (14, 16) are integral components of a monocrystalline semiconductor crystal (10) with a IC-compatible structure. The three-dimensional structural form of the spring-mass system (12) is produced by anisotropic semiconductor etching, defined P/N junctions of the semiconductor layer arrangement functioning as etch stop means in order to more particularly create a gap (22) permitting respective movement of the mass (16) between the mass (16) and the semiconductor substrate (20).

Abstract translation: 一种具有力和/或加速度传感器（12）的半导体器件，其具有响应于待测量的相应量的弹簧质量系统（14,16），并且其质量（16）经由至少一个弹性支撑元件（ 14）在半导体衬底（20）上。 半导体衬底（20）和弹簧质量系统（14,16）是具有IC兼容结构的单晶半导体晶体（10）的组成部分。 通过各向异性半导体蚀刻制造弹簧质量体系（12）的三维结构形式，作为蚀刻停止装置的半导体层布置的限定的P / N结，以更具体地形成允许相应的间隙（22） 质量块（16）和半导体衬底（20）之间的质量块（16）的移动。

公开(公告)号：US5631198A

公开(公告)日：1997-05-20

申请号：US590984

申请日：1996-01-24

Applicant: Siegbert Hartauer

Inventor： Siegbert Hartauer

IPC: G01L9/04 ,  G01L9/00 ,  H01L29/84 ,  H01L21/77

CPC classification number: G01L9/0054 ,  G01L9/0042 ,  Y10S438/977

Abstract: A semiconductor device comprises a piezoresistive pressure sensor (12), which has a membrane (14), which is constituted by a conducting epitaxy layer (16), which is applied to a conducting semiconductor substrate (18) of the opposite conductivity. On the outer surface (20) of the membrane facing away from the semiconductor substrate (18) at least one piezoresistor (22) is incorporated. Between the semiconductor substrate (18) and the epitaxy layer (16) an annularly structured intermediate layer (28) is incorporated, which defines a region (26'), adjoining the inner surface (24) of the membrane, of an opening (26) extending through the semiconductor substrate (18). This opening (26) is produced by anisotropic semiconductor etching, the intermediate layer (28) having a conductivity which is opposite to that of the semiconductor substrate so that this intermediate layer (28) functions as an etch stopping means and is not attacked by the etchant.

Abstract translation: 半导体器件包括压阻式压力传感器（12），其具有由导电外延层（16）构成的膜（14），其被施加到具有相反导电性的导电半导体衬底（18）。 在膜的远离半导体衬底（18）的外表面（20）上并入至少一个压敏电阻（22）。 在半导体衬底（18）和外延层（16）之间，结合有环形结构的中间层（28），其限定邻近膜的内表面（24）的开口（26）的区域（26'） ）延伸穿过半导体衬底（18）。 该开口（26）通过各向异性半导体蚀刻制造，中间层（28）具有与半导体衬底相反的导电性，使得该中间层（28）用作蚀刻停止装置，并且不被 蚀刻剂