公开(公告)号：US20170294372A1

公开(公告)日：2017-10-12

申请号：US15632669

申请日：2017-06-26

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Chia-Cheng Chen ,  Chi-Ching Ho ,  Shao-Tzu Tang ,  Yu-Che Liu ,  Ying-Chou Tsai

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L23/49838 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L2221/68345 ,  H01L2224/05554 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48159 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49173 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/81424 ,  H01L2224/81447 ,  H01L2224/83005 ,  H01L2224/85005 ,  H01L2924/00014 ,  H01L2924/10162 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2224/13099 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor package is provided, which includes: a dielectric layer made of a material used for fabricating built-up layer structures; a conductive trace layer formed on the dielectric layer; a semiconductor chip is mounted on and electrically connected to the conductive trace layer; and an encapsulant formed over the dielectric layer to encapsulate the semiconductor chip and the conductive trace layer. Since a strong bonding is formed between the dielectric layer and the conductive trace layer, the present invention can prevent delamination between the dielectric layer and the conductive trace layer from occurrence, thereby improving reliability and facilitating the package miniaturization by current fabrication methods.

公开(公告)号：US09991197B2

公开(公告)日：2018-06-05

申请号：US15632669

申请日：2017-06-26

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Chia-Cheng Chen ,  Chi-Ching Ho ,  Shao-Tzu Tang ,  Yu-Che Liu ,  Ying-Chou Tsai

IPC: H01L29/40 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/49838 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L2221/68345 ,  H01L2224/05554 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48159 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49173 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/81424 ,  H01L2224/81447 ,  H01L2224/83005 ,  H01L2224/85005 ,  H01L2924/00014 ,  H01L2924/10162 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2224/13099 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor package is provided, which includes: a dielectric layer made of a material used for fabricating built-up layer structures; a conductive trace layer formed on the dielectric layer; a semiconductor chip is mounted on and electrically connected to the conductive trace layer; and an encapsulant formed over the dielectric layer to encapsulate the semiconductor chip and the conductive trace layer. Since a strong bonding is formed between the dielectric layer and the conductive trace layer, the present invention can prevent delamination between the dielectric layer and the conductive trace layer from occurrence, thereby improving reliability and facilitating the package miniaturization by current fabrication methods.

公开(公告)号：US20140091462A1

公开(公告)日：2014-04-03

申请号：US13729963

申请日：2012-12-28

Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.

Inventor： Chia-Cheng Chen ,  Chi-Ching Ho ,  Shao-Tzu Tang ,  Yu-Che Liu ,  Ying-Chou Tsai

IPC: H01L23/498 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/49838 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L2221/68345 ,  H01L2224/05554 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48159 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49173 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/81424 ,  H01L2224/81447 ,  H01L2224/83005 ,  H01L2224/85005 ,  H01L2924/00014 ,  H01L2924/10162 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2224/13099 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor package is provided, which includes: a dielectric layer made of a material used for fabricating built-up layer structures; a conductive trace layer formed on the dielectric layer; a semiconductor chip is mounted on and electrically connected to the conductive trace layer; and an encapsulant formed over the dielectric layer to encapsulate the semiconductor chip and the conductive trace layer. Since a strong bonding is formed between the dielectric layer and the conductive trace layer, the present invention can prevent delamination between the dielectric layer and the conductive trace layer from occurrence, thereby improving reliability and facilitating the package miniaturization by current fabrication methods.

Abstract translation: 提供一种半导体封装，其包括：由用于制造积层层结构的材料制成的电介质层; 形成在电介质层上的导电迹线层; 半导体芯片安装在导电迹线层上并电连接到导电迹线层上; 以及形成在电介质层上以封装半导体芯片和导电迹线层的密封剂。 由于在电介质层和导电迹线层之间形成牢固的接合，因此本发明能够防止电介质层与导电迹线层之间的分层发生，从而提高可靠性，并且通过现有的制造方法便于封装小型化。