公开(公告)号：US20080238285A1

公开(公告)日：2008-10-02

申请号：US11902950

申请日：2007-09-26

Applicant: Soon-Hyung Hong ,  Chan-Bin Mo

Inventor： Soon-Hyung Hong ,  Chan-Bin Mo

IPC: H01J1/02 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30469

Abstract: The present invention relates to a long-life carbon nanotube field emitter with a three-dimensional structure and method for fabricating the same. Since the emitter having an extended area according to the design of the present invention can minimize the current density flowing per single wire of the carbon nanotube, it can be expected that the damage of the carbon nanotube is minimized so that the lifetime of the field emitter can be significantly improved and the commercialization of the carbon nanotube field emitter will be advanced.

Abstract translation: 本发明涉及具有三维结构的长寿命碳纳米管场发射体及其制造方法。 由于根据本发明的设计具有扩展区域的发射极可以使碳纳米管的每一线流动的电流密度最小化，所以可以预期碳纳米管的损伤最小化，使得场致发射体的寿命 可以显着提高碳纳米管场发射体的商业化程度。

公开(公告)号：US20130104974A1

公开(公告)日：2013-05-02

申请号：US13620475

申请日：2012-09-14

Applicant: Young-Su Kim ,  Dong-Seop Kim ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Sang Park ,  Chan-Bin Mo ,  Sung-Chul Lee

Inventor： Young-Su Kim ,  Dong-Seop Kim ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Sang Park ,  Chan-Bin Mo ,  Sung-Chul Lee

IPC: H01L31/0216

CPC classification number: H01L31/0682 ,  H01L31/022441 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a silicon substrate including a front surface for receiving light, and a rear surface opposite the front surface, an emitter diffusion region on the rear surface and doped with a first polarity that is opposite to a polarity of the silicon substrate, a base diffusion region on the rear surface of the substrate and doped with a second polarity that is the same as the polarity of the silicon substrate, and an insulation gap between the emitter diffusion region and the base diffusion region, wherein the base diffusion region has a closed polygonal shape, and wherein the insulation gap is adjacent the base diffusion region.

Abstract translation: 太阳能电池包括：硅基板，包括用于接收光的前表面和与前表面相对的后表面，在后表面上的发射极扩散区域，并掺杂有与硅基板的极性相反的第一极性; 基底扩散区域，并且掺杂有与硅衬底的极性相同的第二极性，以及发射极扩散区域和基极扩散区域之间的绝缘间隙，其中，基极扩散区域具有 闭合的多边形形状，并且其中绝缘间隙与基底扩散区相邻。

公开(公告)号：US09412895B2

公开(公告)日：2016-08-09

申请号：US13612687

申请日：2012-09-12

Applicant: Young-Jin Kim ,  Doo-Youl Lee ,  Young-Su Kim ,  Chan-Bin Mo ,  Young-Sang Park ,  Jae-Ho Shin ,  Sang-Jin Park ,  Sang-Won Seo ,  Min-Chul Song ,  Dong-Seop Kim

Inventor： Young-Jin Kim ,  Doo-Youl Lee ,  Young-Su Kim ,  Chan-Bin Mo ,  Young-Sang Park ,  Jae-Ho Shin ,  Sang-Jin Park ,  Sang-Won Seo ,  Min-Chul Song ,  Dong-Seop Kim

IPC: H01L31/18 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.

Abstract translation: 一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。 根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

公开(公告)号：US20130267059A1

公开(公告)日：2013-10-10

申请号：US13612687

申请日：2012-09-12

Applicant: Young-Jin Kim ,  Doo-Youl Lee ,  Young-Su Kim ,  Chan-Bin Mo ,  Young-Sang Park ,  Jae-Ho Shin ,  Sang-Jin Park ,  Sang-Won Seo ,  Min-Chul Song ,  Dong-Seop Kim

Inventor： Young-Jin Kim ,  Doo-Youl Lee ,  Young-Su Kim ,  Chan-Bin Mo ,  Young-Sang Park ,  Jae-Ho Shin ,  Sang-Jin Park ,  Sang-Won Seo ,  Min-Chul Song ,  Dong-Seop Kim

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.

Abstract translation: 一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。 根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

公开(公告)号：US08889981B2

公开(公告)日：2014-11-18

申请号：US13424450

申请日：2012-03-20

Applicant: Doo-Youl Lee ,  Young-Jin Kim ,  Dong-Seop Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Young-Sang Park

Inventor： Doo-Youl Lee ,  Young-Jin Kim ,  Dong-Seop Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Young-Sang Park

IPC: H01L31/00 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/0747

CPC classification number: H01L31/022441 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  Y02E10/547 ,  Y02E10/548

Abstract: A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.

Abstract translation: 光电器件在衬底上包括第一半导体结构和第二半导体结构，并且第一半导体结构包括与第二半导体结构不同的导电类型。 光电器件还包括第一半导体结构上的第一电极和第二半导体结构上的第二电极以及与第二半导体结构相邻的层间绝缘结构。 层间绝缘结构将第一半导体结构与第二半导体结构分开，并将第一半导体结构与第二电极分离。

公开(公告)号：US20130087192A1

公开(公告)日：2013-04-11

申请号：US13445851

申请日：2012-04-12

Applicant: Young-Su Kim ,  Doo-Youl Lee ,  Young-Jin Kim ,  Chan-Bin Mo ,  Young-Sang Park

Inventor： Young-Su Kim ,  Doo-Youl Lee ,  Young-Jin Kim ,  Chan-Bin Mo ,  Young-Sang Park

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022441 ,  Y02E10/547

Abstract: A photovoltaic device, and a method of fabricating the same are provided. Here, a base portion and an emitter portion are formed on a surface of a semiconductor substrate. An insulation layer is formed on the base portion and the emitter portion. The insulation layer has a plurality of vias to partially expose the base portion and the emitter portion. A first electrode is formed to contact a region of the emitter portion through at least one of the vias, and a second electrode is formed to contact a region of the base portion through at least another one of the vias. Then, a dicing line is set at a bus electrode portion of the second electrode, and the semiconductor substrate is split into at least two photovoltaic devices at the base portion along the dicing line.

Abstract translation: 提供一种光电器件及其制造方法。 这里，在半导体衬底的表面上形成基极部分和发射极部分。 绝缘层形成在基部和发射极部分上。 绝缘层具有多个通孔以部分地暴露基部和发射极部分。 第一电极形成为通过至少一个通孔接触发射极部分的区域，并且第二电极形成为通过至少另一个通孔接触基部的区域。 然后，将切割线设置在第二电极的总线电极部分，并且半导体衬底沿着切割线在基部分割成至少两个光伏器件。

公开(公告)号：US20130147003A1

公开(公告)日：2013-06-13

申请号：US13584917

申请日：2012-08-14

Applicant: Young-Su KIM ,  Chan-Bin Mo

Inventor： Young-Su KIM ,  Chan-Bin Mo

IPC: H01L31/0224

CPC classification number: H01L31/0682 ,  H01L31/022433 ,  H01L31/022441 ,  Y02E10/547

Abstract: A photovoltaic device includes a substrate, the substrate having a base region and an emitter region, the base region having a first width and the emitter region having a second width, a first electrode in contact with and electrically connected to the base region, the first electrode having a third width where it overlies the base region, the third width being greater than the first width such that the first electrode overhangs the base region at at least one side thereof, and a second electrode in contact with and electrically connected to the emitter region, the second electrode having a fourth width where it overlies the emitter region, a ratio of the third width to the fourth width being about 0.3 to about 3.4.

Abstract translation: 光电器件包括衬底，衬底具有基极区域和发射极区域，基极区域具有第一宽度，发射极区域具有第二宽度，第一电极与基极区域接触并电连接，第一电极 电极，其具有第三宽度，其覆盖在所述基底区域上，所述第三宽度大于所述第一宽度，使得所述第一电极在其至少一侧悬垂在所述基底区域;以及第二电极，其与所述发射体接触并电连接 所述第二电极具有覆盖在所述发射极区域上的第四宽度，所述第三宽度与所述第四宽度的比率为约0.3至约3.4。

公开(公告)号：US20120107997A1

公开(公告)日：2012-05-03

申请号：US13239197

申请日：2011-09-21

Applicant: Young-Jin KIM ,  Dong-Seop Kim ,  Doo-Youl Lee ,  Jun-Hyun Park ,  Sang-Ho Kim ,  Ju-Hyun Jeong ,  Young-Soo Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Myeong-Woo Kim ,  Sang-Joon Lee

Inventor： Young-Jin KIM ,  Dong-Seop Kim ,  Doo-Youl Lee ,  Jun-Hyun Park ,  Sang-Ho Kim ,  Ju-Hyun Jeong ,  Young-Soo Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Myeong-Woo Kim ,  Sang-Joon Lee

IPC: H01L31/18

CPC classification number: H01L31/0682 ,  H01L31/18 ,  Y02E10/547

Abstract: In a method of manufacturing a solar cell, a first dopant layer is formed on a lower surface of a substrate and a diffusion-preventing layer is formed on an upper surface of the substrate. Then, the first dopant layer is patterned to expose portions of the lower surface of the substrate, and a second dopant layer is formed on the exposed portion of the lower surface of the substrate. A third dopant layer is formed on the diffusion-preventing layer, and the substrate is heated to diffuse dopants from the first, second, and third dopant layers into the substrate, thereby forming semiconductor areas in the substrate.

Abstract translation: 在制造太阳能电池的方法中，在基板的下表面上形成第一掺杂剂层，在基板的上表面形成防扩散层。 然后，将第一掺杂剂层图案化以暴露衬底的下表面的部分，并且在衬底的下表面的暴露部分上形成第二掺杂剂层。 在扩散防止层上形成第三掺杂剂层，并且加热衬底以将掺杂剂从第一，第二和第三掺杂剂层扩散到衬底中，从而在衬底中形成半导体区域。

公开(公告)号：US09293614B2

公开(公告)日：2016-03-22

申请号：US13565828

申请日：2012-08-03

Applicant: Min-Seok Oh ,  Doo-Youl Lee ,  Young-Jin Kim ,  Min Park ,  Yun-Seok Lee ,  Nam-Kyu Song ,  Dong-Seop Kim ,  Cho-Young Lee ,  Chan-Bin Mo ,  Young-Su Kim ,  Hoon-Ha Jeon ,  Yeon-Ik Jang ,  Jun-Ki Hong ,  Young-Sang Park ,  Chan-Yoon Jung

Inventor： Min-Seok Oh ,  Doo-Youl Lee ,  Young-Jin Kim ,  Min Park ,  Yun-Seok Lee ,  Nam-Kyu Song ,  Dong-Seop Kim ,  Cho-Young Lee ,  Chan-Bin Mo ,  Young-Su Kim ,  Hoon-Ha Jeon ,  Yeon-Ik Jang ,  Jun-Ki Hong ,  Young-Sang Park ,  Chan-Yoon Jung

IPC: H01L31/0224 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/068 ,  H01L31/0747

CPC classification number: H01L31/03529 ,  H01L31/0224 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0747 ,  Y02E10/547

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Abstract translation: 一种太阳能电池，包括第一导电型半导体衬底; 在半导体衬底的前表面上的第一本征半导体层; 在所述第一本征半导体层的至少一个表面上的第一导电类型的第一半导体层; 在所述半导体衬底的背面上的第二导电型第二半导体层; 在所述第二半导体层和所述半导体衬底之间的第二本征半导体层; 在所述半导体衬底的背面上的第一导电型第三半导体层，所述第三半导体层与所述第二半导体层间隔开; 以及在第三半导体层和半导体衬底之间的第三本征半导体层。

公开(公告)号：US20130092224A1

公开(公告)日：2013-04-18

申请号：US13424450

申请日：2012-03-20

Applicant: Doo-Youl LEE ,  Young-Jin Kim ,  Dong-Seop Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Young-Sang Park

Inventor： Doo-Youl LEE ,  Young-Jin Kim ,  Dong-Seop Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Young-Sang Park

IPC: H01L31/0216

CPC classification number: H01L31/022441 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  Y02E10/547 ,  Y02E10/548

Abstract: A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.

Abstract translation: 光电器件在衬底上包括第一半导体结构和第二半导体结构，并且第一半导体结构包括与第二半导体结构不同的导电类型。 光电器件还包括第一半导体结构上的第一电极和第二半导体结构上的第二电极以及与第二半导体结构相邻的层间绝缘结构。 层间绝缘结构将第一半导体结构与第二半导体结构分开，并将第一半导体结构与第二电极分离。