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公开(公告)号：US08970963B2
公开(公告)日：2015-03-03
申请号：US13715804
申请日：2012-12-14
申请人： Stephen Moffatt , Douglas E. Holmgren , Samuel C. Howells , Edric Tong , Bruce E. Adams , Jiping Li , Aaron Muir Hunter
发明人： Stephen Moffatt , Douglas E. Holmgren , Samuel C. Howells , Edric Tong , Bruce E. Adams , Jiping Li , Aaron Muir Hunter
CPC分类号： G02B27/106 , G02B17/0888 , G02B27/0025 , G02B27/10 , G02B27/1006 , G02B27/12 , G02B27/123 , G02B27/126 , G02B27/14 , G02B27/143 , G02B27/30
摘要： Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.
摘要翻译： 公开了用于组合放大辐射束的装置和方法。 光束组合器具有准直光学器件，其被定位成以相对于准直光学器件的光轴的恒定入射角接收多个相干辐射束。 在一些实施例中，相应的入射角也可以不同。 准直光学元件具有使光束准直的光学特性。 光学性质可以是折射或反射的，或其组合。 还可以提供收集光学器件以将多个光束引导到准直光学元件。 光束组合器可以用在热处理装置中，以将多于两个的相干放大辐射束（例如激光器）组合成单个光束。
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公开(公告)号：US20130055731A1
公开(公告)日：2013-03-07
申请号：US13601069
申请日：2012-08-31
IPC分类号： F25D31/00
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译： 描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。 使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。 然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。 选择渐进式结晶过程中输送的脉冲能量，以使熔融材料冻结时将小晶体转化为大晶体。
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3.发明授权公开(公告)号：US09373511B2
公开(公告)日：2016-06-21
申请号：US13601069
申请日：2012-08-31
IPC分类号： C30B1/02 , H01L21/268 , H01L21/02
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译： 描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。 使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。 然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。 选择渐进式结晶过程中输送的脉冲能量，以使熔融材料冻结时将小晶体转化为大晶体。
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公开(公告)号：US20120325784A1
公开(公告)日：2012-12-27
申请号：US13194552
申请日：2011-07-29
申请人： Stephen Moffatt , Douglas E. Holmgren , Samuel C. Howells , Edric Tong , Bruce E. Adams , Jiping Li , Aaron Muir Hunter
发明人： Stephen Moffatt , Douglas E. Holmgren , Samuel C. Howells , Edric Tong , Bruce E. Adams , Jiping Li , Aaron Muir Hunter
IPC分类号： B23K26/00
CPC分类号： H01L21/477 , B23K26/0006 , B23K26/03 , B23K26/032 , B23K26/04 , B23K26/0608 , B23K26/0622 , B23K26/08 , B23K26/127 , B23K26/354 , B23K2101/40 , B23K2103/56 , F27B5/14 , H01L21/268 , H01S3/0057
摘要： The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.
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5.发明授权Methods of solid phase recrystallization of thin film using pulse train annealing method 有权使用脉冲串退火法对薄膜进行固相重结晶的方法公开(公告)号：US08247317B2
公开(公告)日：2012-08-21
申请号：US12764723
申请日：2010-04-21
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , C30B13/24 , C30B29/06 , H01L21/02521
摘要： Embodiments of the present invention provide methods of solid phase recrystallization of thin film using a plurality of pulses of electromagnetic energy. In one embodiment, the methods of the present invention may be used to anneal an entire substrate surface or selected regions of a surface of a substrate by delivering a plurality of pluses of energy to a crystalline seed region or layer upon which an amorphous layer is deposited to recrystallize the amorphous layer so that it has the same grain structure and crystal orientation as that of the underlying crystalline seed region or layer.
摘要翻译： 本发明的实施例提供使用多个电磁能脉冲进行薄膜固相重结晶的方法。 在一个实施例中，本发明的方法可以用于通过将多个能量递送到沉积非晶层的结晶种子区域或层来退火整个衬底表面或衬底的表面的选定区域 使非晶层重结晶，使其具有与下面的结晶种子区域或层相同的晶粒结构和晶体取向。
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公开(公告)号：US20120190182A1
公开(公告)日：2012-07-26
申请号：US13440495
申请日：2012-04-05
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/2658
摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
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7.发明申请DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS 有权使用OCTADECABORANE自补偿植入物进行无缺陷断层形成公开(公告)号：US20120171853A1
公开(公告)日：2012-07-05
申请号：US13418069
申请日：2012-03-12
IPC分类号： H01L21/268
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/2658
摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
摘要翻译： 一种用硼簇植入半导体衬底的方法和装置。 通过等离子体浸渍或离子束注入，注入十八硼烷衬底。 然后将衬底表面退火以完全解离并激活硼簇。 退火可以通过熔化注入区域或通过亚熔融退火工艺进行。
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8.发明授权Defect-free junction formation using octadecaborane self-amorphizing implants 有权使用十八硼烷自身无定形植入物的无缺陷连接形成公开(公告)号：US08815719B2
公开(公告)日：2014-08-26
申请号：US13418069
申请日：2012-03-12
IPC分类号： H01L21/26 , H01L21/265
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/2658
摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
摘要翻译： 一种用硼簇植入半导体衬底的方法和装置。 通过等离子体浸渍或离子束注入，注入十八硼烷衬底。 然后将衬底表面退火以完全解离并激活硼簇。 退火可以通过熔化注入区域或通过亚熔融退火工艺进行。
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公开(公告)号：US08569187B2
公开(公告)日：2013-10-29
申请号：US13194775
申请日：2011-07-29
申请人： Stephen Moffatt , Douglas E. Holmgren , Samuel C. Howells , Edric Tong , Bruce E. Adams , Jiping Li , Aaron Muir Hunter
发明人： Stephen Moffatt , Douglas E. Holmgren , Samuel C. Howells , Edric Tong , Bruce E. Adams , Jiping Li , Aaron Muir Hunter
CPC分类号： H01L21/477 , B23K26/0006 , B23K26/03 , B23K26/032 , B23K26/04 , B23K26/0608 , B23K26/0622 , B23K26/08 , B23K26/127 , B23K26/354 , B23K2101/40 , B23K2103/56 , F27B5/14 , H01L21/268 , H01S3/0057
摘要： The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.
摘要翻译： 本发明一般涉及一种光学系统，其能够在包含在基板的表面上的退火区域上可靠地传递均匀的能量。 光学系统适于在衬底的表面上的期望区域上传送或投影具有期望的二维形状的均匀量的能量。 用于光学系统的能量源通常是多个激光器，其被组合以形成能量场。
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公开(公告)号：US20120329178A1
公开(公告)日：2012-12-27
申请号：US13194775
申请日：2011-07-29
申请人： Stephen Moffatt , Douglas E. Holmgren , Samuel C. Howells , Edric Tong , Bruce E. Adams , Jiping Li , Aaron Muir Hunter
发明人： Stephen Moffatt , Douglas E. Holmgren , Samuel C. Howells , Edric Tong , Bruce E. Adams , Jiping Li , Aaron Muir Hunter
IPC分类号： H01L21/66
CPC分类号： H01L21/477 , B23K26/0006 , B23K26/03 , B23K26/032 , B23K26/04 , B23K26/0608 , B23K26/0622 , B23K26/08 , B23K26/127 , B23K26/354 , B23K2101/40 , B23K2103/56 , F27B5/14 , H01L21/268 , H01S3/0057
摘要： The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.
摘要翻译： 本发明一般涉及一种光学系统，其能够在包含在基板的表面上的退火区域上可靠地传递均匀的能量。 光学系统适于在衬底的表面上的期望区域上传送或投影具有期望的二维形状的均匀量的能量。 用于光学系统的能量源通常是多个激光器，其被组合以形成能量场。
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