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1.发明授权公开(公告)号：US07348216B2
公开(公告)日：2008-03-25
申请号：US11243882
申请日：2005-10-04
申请人： Steven R. Codding , Timothy C. Krywanczyk , Edmund J. Sprogis , Jocelyn Sylvestre , Matthew R. Whalen
发明人： Steven R. Codding , Timothy C. Krywanczyk , Edmund J. Sprogis , Jocelyn Sylvestre , Matthew R. Whalen
IPC分类号： H01L21/00
CPC分类号： H01L21/67132 , H01L21/02057 , H01L21/67028
摘要： A method for the removal of residual UV radiation-sensitive adhesive from the surfaces of semiconductor wafers, remaining thereon from protective UV radiation-sensitive tapes which were stripped from the semiconductor wafers. Moreover, provided is an arrangement for implementing the removal of residual sensitive adhesive, which remain from tapes employed as protective layers on semiconductor wafers, particularly wafers having surfaces including C4 connections.
摘要翻译： 从半导体晶片剥离的保护性紫外线辐射敏感带保留在其上的半导体晶片的表面上去除残留的UV辐射敏感性粘合剂的方法。 此外，提供了一种用于实现从半导体晶片上用作保护层的带留下的残留敏感性粘合剂的去除，特别是具有包括C4连接的表面的晶片的布置。
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公开(公告)号：US20080124896A1
公开(公告)日：2008-05-29
申请号：US11563715
申请日：2006-11-28
IPC分类号： H01L21/461
CPC分类号： H01L21/78
摘要： Disclosed are a method of and system for fabricating a semiconductor wafer. The method comprises the steps of providing a silicon wafer having a front side an a back side, building an integrated circuit on the front side of the wafer, and thereafter removing substrate from the back side of the silicon wafer. The building step includes the steps of forming a desired structure in the wafer, and forming an end structure in the wafer, said end structure extending to a greater depth, toward the back side of the wafer, than the desired structure. Also, the removing step includes the step of removing said substrate only to the end structure, whereby no part of the desired structure is removed during the removing step.
摘要翻译： 公开了用于制造半导体晶片的方法和系统。 该方法包括以下步骤：提供具有正面和背面的硅晶片，在晶片前侧构建集成电路，然后从硅晶片的背面去除衬底。 构建步骤包括以下步骤：在晶片中形成期望的结构，并且在晶片中形成端部结构，所述端部结构延伸到比晶片的背面更大的深度，而不是期望的结构。 此外，除去步骤包括仅将该基材除去至端部结构的步骤，由此在除去步骤期间不除去所需结构的一部分。
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公开(公告)号：US07932614B2
公开(公告)日：2011-04-26
申请号：US12909494
申请日：2010-10-21
IPC分类号： H01L23/48
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/27436 , H01L2224/83191 , H01L2924/00014 , H01L2924/01057 , H01L2924/09701 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.
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公开(公告)号：US20110031620A1
公开(公告)日：2011-02-10
申请号：US12909494
申请日：2010-10-21
IPC分类号： H01L23/488 , H01L23/498
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/27436 , H01L2224/83191 , H01L2924/00014 , H01L2924/01057 , H01L2924/09701 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.
摘要翻译： 在半导体基板的正面上形成C4研磨胶带和激光烧蚀粘合剂层。 然后将载体基板连接到激光烧蚀粘合剂层。 通过抛光或研磨使半导体衬底的背面变薄，在此期间，载体衬底提供机械支撑以使半导体衬底的薄化能够达到约25μm的厚度。 胶片框架胶带附着到减薄的半导体衬底的背面，激光烧蚀粘合剂层通过激光烧蚀，从而使载体衬底与C4研磨胶带的背面分离。 薄膜框架胶带，变薄的半导体衬底和C4研磨胶带的组装被切割。 通过紫外线照射C4研磨胶带以变得粘合性变差，随后被除去。
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公开(公告)号：US07867876B2
公开(公告)日：2011-01-11
申请号：US12342393
申请日：2008-12-23
IPC分类号： H01L21/30
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/27436 , H01L2224/83191 , H01L2924/00014 , H01L2924/01057 , H01L2924/09701 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.
摘要翻译： 在半导体基板的正面上形成C4研磨胶带和激光烧蚀粘合剂层。 然后将载体基板连接到激光烧蚀粘合剂层。 通过抛光或研磨使半导体衬底的背面变薄，在此期间，载体衬底提供机械支撑以使半导体衬底的薄化能够达到约25μm的厚度。 胶片框架胶带附着到减薄的半导体衬底的背面，激光烧蚀粘合剂层通过激光烧蚀，从而使载体衬底与C4研磨胶带的背面分离。 薄膜框架胶带，变薄的半导体衬底和C4研磨胶带的组装被切割。 通过紫外线照射C4研磨胶带以变得粘合性变差，随后被除去。
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公开(公告)号：US20100155936A1
公开(公告)日：2010-06-24
申请号：US12342393
申请日：2008-12-23
IPC分类号： H01L21/30 , H01L23/488
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/27436 , H01L2224/83191 , H01L2924/00014 , H01L2924/01057 , H01L2924/09701 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.
摘要翻译： 在半导体基板的正面上形成C4研磨胶带和激光烧蚀粘合剂层。 然后将载体基板连接到激光烧蚀粘合剂层。 通过抛光或研磨使半导体衬底的背面变薄，在此期间，载体衬底提供机械支撑以使半导体衬底的薄化能够达到约25μm的厚度。 胶片框架胶带附着到减薄的半导体衬底的背面，激光烧蚀粘合剂层通过激光烧蚀，从而使载体衬底与C4研磨胶带的背面分离。 薄膜框架胶带，变薄的半导体衬底和C4研磨胶带的组装被切割。 通过紫外线照射C4研磨胶带以变得粘合性变差，随后被除去。
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公开(公告)号：US07498236B2
公开(公告)日：2009-03-03
申请号：US11563715
申请日：2006-11-28
IPC分类号： H01L21/30 , H01L21/46 , H01L21/306 , C23F1/00
CPC分类号： H01L21/78
摘要： Disclosed are a method of and system for fabricating a semiconductor wafer. The method comprises the steps of providing a silicon wafer having a front side an a back side, building an integrated circuit on the front side of the wafer, and thereafter removing substrate from the back side of the silicon wafer. The building step includes the steps of forming a desired structure in the wafer, and forming an end structure in the wafer, said end structure extending to a greater depth, toward the back side of the wafer, than the desired structure. Also, the removing step includes the step of removing said substrate only to the end structure, whereby no part of the desired structure is removed during the removing step.
摘要翻译： 公开了用于制造半导体晶片的方法和系统。 该方法包括以下步骤：提供具有正面和背面的硅晶片，在晶片前侧构建集成电路，然后从硅晶片的背面去除衬底。 构建步骤包括以下步骤：在晶片中形成期望的结构，并且在晶片中形成端部结构，所述端部结构延伸到比晶片的背面更大的深度，而不是期望的结构。 此外，除去步骤包括仅将该基材除去至端部结构的步骤，由此在除去步骤期间不除去所需结构的一部分。
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8.发明授权Application of a thermally conductive thin film to a wafer backside prior to dicing to prevent chipping and cracking 有权在切割之前将导热薄膜应用于晶片背面以防止碎裂和开裂公开(公告)号：US07387911B2
公开(公告)日：2008-06-17
申请号：US10990778
申请日：2004-11-16
申请人： David M Audette , Steven R. Codding , Timothy C. Krywanczyk , Brian J. Thibault , Matthew R. Whalen
发明人： David M Audette , Steven R. Codding , Timothy C. Krywanczyk , Brian J. Thibault , Matthew R. Whalen
IPC分类号： H01L21/50 , H01L21/48 , H01L21/44 , H01L21/46 , H01L23/544 , H01L21/768 , H01L21/78
CPC分类号： H01L23/562 , H01L21/78 , H01L23/36 , H01L23/3737 , H01L2924/0002 , H01L2924/00
摘要： A thermally conductive protective film or layer is applied to the backside surface of a semiconductor wafer prior to a subsequent dicing operation performed on the wafer to singulate the wafer into diced semiconductor chips, during which the thin thermally conductive film minimizes and prevents chipping and cracking damage to the wafer and diced chips. During subsequent electrical operation of a diced chip, the thin thermally conductive film functions as a thermal conductor to dissipate and conduct away to a heat sink any heat generated during operation of the chip.
摘要翻译： 在对晶片进行随后的切割操作之前，将导热保护膜或层施加到半导体晶片的背面，以便将晶片分成切割的半导体芯片，在此期间，薄导热膜最小化并防止切屑和破裂损伤 到晶圆和切片芯片。 在切割芯片的随后的电操作期间，薄的导热膜用作热导体，以在芯片的操作期间产生的热量消散并导向散热器。
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公开(公告)号：US08034718B2
公开(公告)日：2011-10-11
申请号：US12031726
申请日：2008-02-15
IPC分类号： H01L21/302
CPC分类号： H01L21/02032
摘要： Disclosed are embodiments of a method of removing patterned circuit structures from the surface of a semiconductor wafer. The method embodiments comprise blasting the surface of the semiconductor wafer with particles so as to remove substantially all of the patterned circuit structures. The blasting process is followed by one or more grinding, polishing and/or cleaning processes to remove any remaining circuit structures, to remove any lattice damage and/or to achieve a desired smoothness across the surface of the semiconductor wafer.
摘要翻译： 公开了从半导体晶片的表面去除图案化电路结构的方法的实施例。 方法实施例包括用颗粒喷射半导体晶片的表面，以便基本上除去所有图案化的电路结构。 喷砂过程之后是一次或多次研磨，抛光和/或清洁工艺，以除去任何剩余的电路结构，去除任何晶格损伤和/或在半导体晶片的表面上实现期望的平滑度。
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公开(公告)号：US07135124B2
公开(公告)日：2006-11-14
申请号：US10713659
申请日：2003-11-13
IPC分类号： H01L21/302 , C23F1/00 , B24B1/00
CPC分类号： H01L21/78
摘要： In accordance with the foregoing objects and advantages, the present invention provides a fabrication device that may be used during the grinding operation of the fabrication process. The fabrication device comprises a socket plate that includes a plurality of cavities formed therein that correspond in position and number to the solder (or other conductive material) bumps formed on the front surface of a product wafer.
摘要翻译： 根据上述目的和优点，本发明提供了可在制造过程的磨削操作期间使用的制造装置。 该制造装置包括插座板，该插座板包括形成在其中的多个空腔，其位置和数量与形成在产品晶片的前表面上的焊料（或其他导电材料）凸起相对应。
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