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公开(公告)号：US20200211816A1
公开(公告)日：2020-07-02
申请号：US16727547
申请日：2019-12-26
发明人： Hiroshi Matsushita
IPC分类号： H01J37/244 , H01J37/14 , H01J37/317
摘要： An ion implanter includes a measuring device that measures an angle distribution of an ion beam with which a wafer is irradiated. The measuring device includes: a slit into which the ion beam is incident; a central electrode body having a beam measurement surface disposed on a central plane extending from the slit to a beam traveling direction; a plurality of side electrode bodies disposed between the slit and the central electrode body and disposed away from the central plane in a slit width direction, in which each of the plurality of side electrode bodies has a beam measurement surface; and a magnet device that applies a magnetic field bending around an axis extending along a slit length direction to at least one of the beam measurement surfaces of the plurality of side electrode bodies.
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公开(公告)号：US11062880B2
公开(公告)日：2021-07-13
申请号：US16821318
申请日：2020-03-17
发明人： Hiroshi Matsushita , Ryota Ohnishi
IPC分类号： H01J37/317 , H01J37/20 , H01J37/09 , G21K1/10 , H01J37/147 , H01J37/304 , H01J37/30
摘要： An ion implanter includes: a main body which includes a plurality of units which are disposed along a beamline along which an ion beam is transported, and a substrate transferring/processing unit which is disposed farthest downstream of the beamline, and has a neutron ray source in which a neutron ray is generated due to collision of a ultrahigh energy ion beam; an enclosure which at least partially encloses the main body; and a neutron ray scattering member which is disposed at a position where a neutron ray which is emitted from the neutron ray source is incident in a direction in which a distance from the neutron ray source to the enclosure is equal to or less than a predetermined value.
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公开(公告)号：US20200303163A1
公开(公告)日：2020-09-24
申请号：US16821318
申请日：2020-03-17
发明人： Hiroshi Matsushita , Ryota Ohnishi
IPC分类号： H01J37/317 , H01J37/20 , H01J37/147 , H01J37/09 , G21K1/10
摘要： An ion implanter includes: a main body which includes a plurality of units which are disposed along a beamline along which an ion beam is transported, and a substrate transferring/processing unit which is disposed farthest downstream of the beamline, and has a neutron ray source in which a neutron ray is generated due to collision of a ultrahigh energy ion beam; an enclosure which at least partially encloses the main body; and a neutron ray scattering member which is disposed at a position where a neutron ray which is emitted from the neutron ray source is incident in a direction in which a distance from the neutron ray source to the enclosure is equal to or less than a predetermined value.
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公开(公告)号：US11923167B2
公开(公告)日：2024-03-05
申请号：US18087277
申请日：2022-12-22
发明人： Hiroshi Matsushita
IPC分类号： H01J37/244 , G01T3/00 , H01J37/147 , H01J37/317
CPC分类号： H01J37/244 , G01T3/00 , H01J37/1472 , H01J37/3171 , H01J2237/0473 , H01J2237/2448
摘要： An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure a neutron ray from a neutron ray source which is generated in the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a plurality of measurement values measured by the plurality of neutron ray measuring instruments.
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公开(公告)号：US10354835B2
公开(公告)日：2019-07-16
申请号：US15992862
申请日：2018-05-30
发明人： Hiroshi Matsushita
IPC分类号： H01J37/304 , H01J37/317 , H01J37/08
摘要： An ion implanter includes an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide, a beamline configured to support an ion beam irradiated target, and a controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously.
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公开(公告)号：US09431214B2
公开(公告)日：2016-08-30
申请号：US14721688
申请日：2015-05-26
IPC分类号： H01J37/00 , H01J37/317 , H01J37/30 , H01J37/147
CPC分类号： H01J37/3171 , H01J37/1477 , H01J37/30 , H01J37/3007 , H01J37/317 , H01J2237/15 , H01J2237/1534 , H01J2237/303 , H01J2237/31701
摘要： An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.
摘要翻译： 离子注入装置包括扫描单元，扫描单元包括扫描电极装置，其允许偏转电场作用在沿着参考轨迹入射的离子束并沿水平方向扫描离子束，并且提供上游电极装置 扫描电极装置的上游。 扫描电极装置包括一对沿水平方向相对设置的扫描电极，其间插入有基准轨迹，并且一对光束传输校正电极被设置为在垂直于水平方向的垂直方向上彼此面对，具有参考 插入其间的轨迹。 一对光束传输校正电极中的每一个包括在扫描电极器件的入口附近沿垂直方向向基准轨迹突出的光束传输校正入口电极体。
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公开(公告)号：US20230139482A1
公开(公告)日：2023-05-04
申请号：US18087277
申请日：2022-12-22
发明人： Hiroshi Matsushita
IPC分类号： H01J37/244 , H01J37/317 , G01T3/00 , H01J37/147
摘要： An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure a neutron ray from a neutron ray source which is generated in the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a plurality of measurement values measured by the plurality of neutron ray measuring instruments.
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公开(公告)号：US11569058B2
公开(公告)日：2023-01-31
申请号：US16821349
申请日：2020-03-17
发明人： Hiroshi Matsushita
IPC分类号： H01J37/244 , H01J37/317 , G01T3/00 , H01J37/147
摘要： An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.
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公开(公告)号：US20200303161A1
公开(公告)日：2020-09-24
申请号：US16821349
申请日：2020-03-17
发明人： Hiroshi Matsushita
IPC分类号： H01J37/244 , H01J37/317 , H01J37/147 , G01T3/00
摘要： An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.
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公开(公告)号：US20180350559A1
公开(公告)日：2018-12-06
申请号：US15994221
申请日：2018-05-31
IPC分类号： H01J37/317 , H01J37/02 , H01J37/05 , H01J37/147 , H01J27/02
摘要： An ion implanter includes an ion source configured to generate an ion beam including an ion of a first nonradioactive nuclide, a beamline configured to support an ion beam irradiated target formed of a solid material including a second nonradioactive nuclide different from the first nonradioactive nuclide, and a controller configured to calculate at least one of an estimated radiation dosage of a radioactive ray and an estimated generation amount of a radioactive nuclide generated by a nuclear reaction between the first nonradioactive nuclide and the second nonradioactive nuclide.
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