公开(公告)号：US09431214B2

公开(公告)日：2016-08-30

申请号：US14721688

申请日：2015-05-26

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Hiroshi Matsushita ,  Mitsuaki Kabasawa ,  Yoshitaka Amano ,  Takanori Yagita

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/30 ,  H01J37/147

CPC classification number: H01J37/3171 ,  H01J37/1477 ,  H01J37/30 ,  H01J37/3007 ,  H01J37/317 ,  H01J2237/15 ,  H01J2237/1534 ,  H01J2237/303 ,  H01J2237/31701

Abstract: An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.

Abstract translation: 离子注入装置包括扫描单元，扫描单元包括扫描电极装置，其允许偏转电场作用在沿着参考轨迹入射的离子束并沿水平方向扫描离子束，并且提供上游电极装置 扫描电极装置的上游。 扫描电极装置包括一对沿水平方向相对设置的扫描电极，其间插入有基准轨迹，并且一对光束传输校正电极被设置为在垂直于水平方向的垂直方向上彼此面对，具有参考 插入其间的轨迹。 一对光束传输校正电极中的每一个包括在扫描电极器件的入口附近沿垂直方向向基准轨迹突出的光束传输校正入口电极体。

公开(公告)号：US20150371822A1

公开(公告)日：2015-12-24

申请号：US14746277

申请日：2015-06-22

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Yoshitaka Amano

IPC: H01J37/317 ,  H01J37/244 ,  H01J37/10

CPC classification number: H01J37/3171 ,  H01J37/10 ,  H01J37/244 ,  H01J2237/038 ,  H01J2237/1202 ,  H01J2237/16

Abstract: An ion implantation apparatus includes: a lens electrode unit including a plurality of electrode sections for parallelizing an ion beam; and a vacuum unit that houses the lens electrode unit in a vacuum environment. The vacuum unit includes: a first vacuum container having a first conductive container wall; a second vacuum container having a second conductive container wall; and an insulating container wall that allows the first vacuum container and the second vacuum container to communicate with each other and that insulates the first conductive container wall from the second conductive container wall. An insulating member is provided that insulates at least one electrode section of the lens electrode unit from at least one of the first conductive container wall and the second conductive container wall, and the insulating member is housed in the vacuum environment together with the lens electrode unit.

Abstract translation: 离子注入装置包括：透镜电极单元，包括用于使离子束平行化的多个电极部分; 以及在真空环境中容纳透镜电极单元的真空单元。 真空单元包括：具有第一导电容器壁的第一真空容器; 具有第二导电容器壁的第二真空容器; 以及允许第一真空容器和第二真空容器彼此连通并使第一导电容器壁与第二导电容器壁绝缘的绝缘容器壁。 提供了一种绝缘构件，其将透镜电极单元的至少一个电极部分与第一导电容器壁和第二导电容器壁中的至少一个绝缘，并且绝缘构件与透镜电极单元一起容纳在真空环境中 。

公开(公告)号：US09208991B1

公开(公告)日：2015-12-08

申请号：US14721752

申请日：2015-05-26

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Hiroshi Matsushita ,  Mitsuaki Kabasawa ,  Yoshitaka Amano ,  Takanori Yagita

IPC: H01J3/18 ,  H01J37/147 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/1477 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/30483

Abstract: An ion implantation apparatus includes a scanning unit scanning the ion beams in a horizontal direction perpendicular to the reference trajectory and a downstream electrode device disposed downstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween. The downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing the downstream end of the scanning electrode.

Abstract translation: 离子注入装置包括：扫描单元，沿垂直于参考轨迹的水平方向扫描离子束;以及下游电极装置，设置在扫描电极装置的下游。 扫描电极装置包括一对沿水平方向彼此相对设置的扫描电极，其间插入有基准轨迹。 下游电极装置包括：电极体，其构成为：相对于垂直于基准轨迹和水平方向的垂直方向的开口宽度和/或沿着基准轨迹的方向的开口厚度，开口宽度和 配置基准轨迹的中央部的开口厚度与扫描电极的下游端的位置附近的开口宽度和/或开口厚度不同。

公开(公告)号：US20150340202A1

公开(公告)日：2015-11-26

申请号：US14721688

申请日：2015-05-26

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Hiroshi Matsushita ,  Mitsuaki Kabasawa ,  Yoshitaka Amano ,  Takanori Yagita

IPC: H01J37/317 ,  H01J37/30

CPC classification number: H01J37/3171 ,  H01J37/1477 ,  H01J37/30 ,  H01J37/3007 ,  H01J37/317 ,  H01J2237/15 ,  H01J2237/1534 ,  H01J2237/303 ,  H01J2237/31701

Abstract: An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.

Abstract translation: 离子注入装置包括扫描单元，扫描单元包括扫描电极装置，其允许偏转电场作用在沿着参考轨迹入射的离子束并沿水平方向扫描离子束，并且提供上游电极装置 扫描电极装置的上游。 扫描电极装置包括一对沿水平方向相对设置的扫描电极，其间插入有基准轨迹，并且一对光束传输校正电极被设置为在垂直于水平方向的垂直方向上彼此面对，具有参考 插入其间的轨迹。 一对光束传输校正电极中的每一个包括在扫描电极器件的入口附近沿垂直方向向基准轨迹突出的光束传输校正入口电极体。

公开(公告)号：US09336992B2

公开(公告)日：2016-05-10

申请号：US14746277

申请日：2015-06-22

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Yoshitaka Amano

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/10 ,  H01J37/244

CPC classification number: H01J37/3171 ,  H01J37/10 ,  H01J37/244 ,  H01J2237/038 ,  H01J2237/1202 ,  H01J2237/16

Abstract: An ion implantation apparatus includes: a lens electrode unit including a plurality of electrode sections for parallelizing an ion beam; and a vacuum unit that houses the lens electrode unit in a vacuum environment. The vacuum unit includes: a first vacuum container having a first conductive container wall; a second vacuum container having a second conductive container wall; and an insulating container wall that allows the first vacuum container and the second vacuum container to communicate with each other and that insulates the first conductive container wall from the second conductive container wall. An insulating member is provided that insulates at least one electrode section of the lens electrode unit from at least one of the first conductive container wall and the second conductive container wall, and the insulating member is housed in the vacuum environment together with the lens electrode unit.

Abstract translation: 离子注入装置包括：透镜电极单元，包括用于使离子束平行化的多个电极部分; 以及在真空环境中容纳透镜电极单元的真空单元。 真空单元包括：具有第一导电容器壁的第一真空容器; 具有第二导电容器壁的第二真空容器; 以及允许第一真空容器和第二真空容器彼此连通并使第一导电容器壁与第二导电容器壁绝缘的绝缘容器壁。 提供了一种绝缘构件，其将透镜电极单元的至少一个电极部分与第一导电容器壁和第二导电容器壁中的至少一个绝缘，并且绝缘构件与透镜电极单元一起容纳在真空环境中 。

公开(公告)号：US20150340197A1

公开(公告)日：2015-11-26

申请号：US14721752

申请日：2015-05-26

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Hiroshi Matsushita ,  Mitsuaki Kabasawa ,  Yoshitaka Amano ,  Takanori Yagita

IPC: H01J37/147 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/1477 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/30483

Abstract: An ion implantation apparatus includes a scanning unit scanning the ion beams in a horizontal direction perpendicular to the reference trajectory and a downstream electrode device disposed downstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween. The downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing the downstream end of the scanning electrode.

Abstract translation: 离子注入装置包括：扫描单元，沿垂直于参考轨迹的水平方向扫描离子束;以及下游电极装置，设置在扫描电极装置的下游。 扫描电极装置包括一对沿水平方向彼此相对设置的扫描电极，其间插入有基准轨迹。 下游电极装置包括：电极体，其构成为：相对于垂直于基准轨迹和水平方向的垂直方向的开口宽度和/或沿着基准轨迹的方向的开口厚度，开口宽度和 配置基准轨迹的中央部的开口厚度与扫描电极的下游端的位置附近的开口宽度和/或开口厚度不同。