Abstract:
This sensor unit includes a base having a substantially-rectangular planar shape including a first side and a second side that are substantially orthogonal to each other, and a plurality of first sensors provided on the base and arranged on a first axis. The first axis is substantially parallel to the first side and passes through a center position of the base.
Abstract:
This sensor unit includes a base having a substantially-rectangular planar shape including a first side and a second side that are substantially orthogonal to each other, and a plurality of first sensors provided on the base and arranged on a first axis. The first axis is substantially parallel to the first side and passes through a center position of the base.
Abstract:
Semiconductors of different types are formed by a crystal growth technique and joined at the interface at which rapid atomic-layer-level compositional changes occur while maintaining high crystallinity of the semiconductor layers so as to form a heterogeneous PN junction. A layered film that includes a PN junction oxide thin film is formed on a single crystal substrate. The PN junction oxide thin film is constituted by an N-type semiconductor oxide thin film and a P-type semiconductor oxide thin film that are epitaxially grown to have c-axis orientation represented by (00k).
Abstract:
A rotary sensing device that can accurately detect a rotation direction, even if a rotating body rotates at a high speed, when a gap between a plurality of subjects for detection in a rotating body varies is equipped with first to Nth sensor elements that are aligned to oppose the rotating body, which is rotatable in a rotation direction that can be either a normal rotation direction or a reverse rotation direction, and in parallel in respective order along the rotation direction, and that output first to Nth (N≧3) sensor signals based upon the rotation of the rotating body, respectively, and a rotation direction detecting part that detects the rotation direction of the rotating body based upon each sensor signal output from each sensor element, and the rotation direction detecting part detects the rotation direction of the rotating body from a first differential signal that is obtained from the first sensor signal and the Mth (3≦M≦N) sensor signal, and a second differential signal obtained from the first sensor signal and the Lth (2≦L≦M-1) sensor signal.
Abstract:
A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.
Abstract:
This sensor unit includes a base having a substantially-rectangular planar shape including a first side and a second side that are substantially orthogonal to each other, and a plurality of first sensors provided on the base and arranged on a first axis. The first axis is substantially parallel to the first side and passes through a center position of the base.
Abstract:
A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.
Abstract:
A magnetic field detection apparatus has a first magnetic sensor and a bias magnet positioned to face the first magnetic sensor. The bias magnet has a magnetic pole surface that faces the first magnetic sensor and that applies a bias magnetic field to the first magnetic sensor. The first magnetic sensor detects magnetic field in a first direction that is parallel to the magnetic pole surface. The magnetic pole surface of the bias magnet has a plurality of grooves arranged in the first direction.
Abstract:
A magnetic sensor device that can prevent an increase in detection error even when stress is applied to a magnetic sensor chip due to heat generation or the like at the time of operation includes a magnetic sensor chip that has a nearly-square shape in a plan view, and a die pad having a mounting surface where the magnetic sensor chip is mounted. Opening portions are formed at positions where four corners of the magnetic sensor chip mounted on the mounting surface overlap, respectively. An area ratio of the opening portions to an area of the die pad is 20% or greater. Also, an area of the overlapped portions with the magnetic sensor chip and the opening portions is 40% or greater relative to the area of the opening portions in a plan view of the die pad.
Abstract:
A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements include at least magnetization direction change layers where a direction of magnetization is changed according to an external magnetic field. The width W1 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the first magnetoresistive effect element, and the width W2 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the second magnetoresistive effect element have a relationship shown by formula (1) below. Sensitivity of the first magnetoresistive effect element to the external magnetic field is higher than that of the second magnetoresistive effect element. W1>W2 (1)