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公开(公告)号：US20190109127A1
公开(公告)日：2019-04-11
申请号：US16199265
申请日：2018-11-26
Applicant: TEXAS INSTRUMENTS INCORPORATED
IPC: H01L27/02 , H01L29/06 , H01L29/747 , H01L29/74
Abstract: Disclosed examples provide an ESD protection circuit including a protection structure to selectively conduct current between a first terminal at a protected node and a second terminal at a reference node in response to the protected node voltage and a control voltage signal rising above a trigger voltage during an ESD event, and a bias circuit configured to bias a protection structure control terminal at a control voltage corresponding to a higher one of a first voltage of the first terminal and a second voltage of the second terminal to control the trigger voltage of the ESD protection structure to keep the ESD protection structure off during normal operation.
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公开(公告)号：US20160086936A1
公开(公告)日：2016-03-24
申请号：US14949417
申请日：2015-11-23
Applicant: Texas Instruments Incorporated
Inventor： Akram A. Salman , Farzan Farbiz , Ann Margaret Concannon , Gianluca Boselli
CPC classification number: H01L27/0262 , H01L27/0248 , H01L27/0259 , H01L27/0266 , H02H9/046
Abstract: An integrated circuit includes a bidirectional ESD device which has a plurality of parallel switch legs. Each switch leg includes a first current switch and a second current switch in a back-to-back configuration. A first current supply node of each first current switch is coupled to a first terminal of the ESD device. A second current supply node of each second current switch is coupled to a second terminal of the ESD device. A first current collection node of each first current switch is coupled to a second current collection node of the corresponding second current switch. The first current collection nodes in each first current switch is not coupled to any other first current collection node, and similarly, the second current collection node in each instance second current switch is not coupled to any other second current collection node.
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公开(公告)号：US11271392B2
公开(公告)日：2022-03-08
申请号：US16558867
申请日：2019-09-03
Applicant: Texas Instruments Incorporated
Inventor： Ann Margaret Concannon , Vishwanath Joshi , Antonio Gallerano , Zhao Gao , Yanqing Li
Abstract: A protection circuit for a signal processor, a method of operating the protection circuit, and a method of forming the protection circuit. In one example, the protection circuit is couplable to a signal port and a first power bus for the signal processor. The protection circuit includes a first diode string couplable across the signal port and the first power bus. The first diode string includes a first diode and a second diode coupled in series in a same polarity sense. The protection circuit also includes a third diode coupled in parallel with one of the first diode and the second diode in an opposite polarity sense.
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公开(公告)号：US11239229B2
公开(公告)日：2022-02-01
申请号：US16199265
申请日：2018-11-26
Applicant: TEXAS INSTRUMENTS INCORPORATED
IPC: H01L27/02 , H01L29/06 , H01L29/74 , H01L29/747
Abstract: Disclosed examples provide an ESD protection circuit including a protection structure to selectively conduct current between a first terminal at a protected node and a second terminal at a reference node in response to the protected node voltage and a control voltage signal rising above a trigger voltage during an ESD event, and a bias circuit configured to bias a protection structure control terminal at a control voltage corresponding to a higher one of a first voltage of the first terminal and a second voltage of the second terminal to control the trigger voltage of the ESD protection structure to keep the ESD protection structure off during normal operation.
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公开(公告)号：US10749336B2
公开(公告)日：2020-08-18
申请号：US15361736
申请日：2016-11-28
Applicant: Texas Instruments Incorporated
Inventor： Krishna Praveen Mysore Rajagopal , Ann Margaret Concannon , Vishwanath Joshi , Aravind Chennimalai Appaswamy , Mariano Dissegna
Abstract: Disclosed examples include an ESD protection circuit, including a transistor operative according to a control voltage signal at a control node to selectively conduct current from a protected node to a reference node during an ESD event, as well as a resistor connected between the control node and the reference node, a capacitor connected between the control node and an internal node, and a diode with an anode connected to the protected node and a cathode connected to the internal node to allow charging current to flow from the protected node to charge the capacitor and to provide a high impedance to the internal node to prevent or mitigate flow of leakage current from the internal node to the protected node to raise a trigger voltage of the protection circuit during normal operation.
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Patent Agency Ranking
公开(公告)号：US09633991B2
公开(公告)日：2017-04-25
申请号：US14949417
申请日：2015-11-23
Applicant: Texas Instruments Incorporated
Inventor： Akram A. Salman , Farzan Farbiz , Ann Margaret Concannon , Gianluca Boselli
CPC classification number: H01L27/0262 , H01L27/0248 , H01L27/0259 , H01L27/0266 , H02H9/046
Abstract: An integrated circuit includes a bidirectional ESD device which has a plurality of parallel switch legs. Each switch leg includes a first current switch and a second current switch in a back-to-back configuration. A first current supply node of each first current switch is coupled to a first terminal of the ESD device. A second current supply node of each second current switch is coupled to a second terminal of the ESD device. A first current collection node of each first current switch is coupled to a second current collection node of the corresponding second current switch. The first current collection nodes in each first current switch is not coupled to any other first current collection node, and similarly, the second current collection node in each instance second current switch is not coupled to any other second current collection node.
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公开(公告)号：US20180145064A1
公开(公告)日：2018-05-24
申请号：US15359833
申请日：2016-11-23
Applicant: Texas Instruments Incorporated
IPC: H01L27/02 , H01L29/747 , H01L29/74 , H01L29/06
CPC classification number: H01L27/0248 , H01L29/0649 , H01L29/7436 , H01L29/747
Abstract: Disclosed examples provide an ESD protection circuit including a protection structure to selectively conduct current between a first terminal at a protected node and a second terminal at a reference node in response to the protected node voltage and a control voltage signal rising above a trigger voltage during an ESD event, and a bias circuit configured to bias a protection structure control terminal at a control voltage corresponding to a higher one of a first voltage of the first terminal and a second voltage of the second terminal to control the trigger voltage of the ESD protection structure to keep the ESD protection structure off during normal operation.
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公开(公告)号：US09397085B2
公开(公告)日：2016-07-19
申请号：US14578747
申请日：2014-12-22
Applicant: Texas Instruments Incorporated
Inventor： Akram A. Salman , Farzan Farbiz , Aravind C. Appaswamy , Ann Margaret Concannon
IPC: H01L23/62 , H01L29/861 , H01L21/8238 , H01L21/8234 , H01L27/02 , H01L27/06 , H01L29/66
CPC classification number: H01L27/0259 , H01L21/265 , H01L21/8222 , H01L27/0623 , H01L29/1008 , H01L29/6625 , H01L29/66386 , H01L29/735 , H01L29/747
Abstract: An integrated circuit and method with a bidirectional ESD transistor. A base diffusion separates an emitter diffusion and a collector diffusion. Silicide is blocked from the base diffusion, the emitter-base junction, the collector-base junction, and from equal portions of the emitter diffusion and the collector diffusions.
Abstract translation: 具有双向ESD晶体管的集成电路和方法。 基极扩散分离发射极扩散和集电极扩散。 硅化物从基极扩散，发射极 - 基极结，集电极 - 基极结以及发射极扩散和集电极扩散的相等部分封闭。
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公开(公告)号：US09224724B2
公开(公告)日：2015-12-29
申请号：US13901772
申请日：2013-05-24
Applicant: Texas Instruments Incorporated
Inventor： Akram A. Salman , Farzan Farbiz , Ann Margaret Concannon , Gianluca Boselli
IPC: H01L27/02
CPC classification number: H01L27/0262 , H01L27/0248 , H01L27/0259 , H01L27/0266 , H02H9/046
Abstract: An integrated circuit includes a bidirectional ESD device which has a plurality of parallel switch legs. Each switch leg includes a first current switch and a second current switch in a back-to-back configuration. A first current supply node of each first current switch is coupled to a first terminal of the ESD device. A second current supply node of each second current switch is coupled to a second terminal of the ESD device. A first current collection node of each first current switch is coupled to a second current collection node of the corresponding second current switch. The first current collection nodes in each first current switch is not coupled to any other first current collection node, and similarly, the second current collection node in each instance second current switch is not coupled to any other second current collection node.
Abstract translation: 集成电路包括具有多个平行开关支脚的双向ESD装置。 每个开关支路包括背对背配置中的第一电流开关和第二电流开关。 每个第一电流开关的第一电流供应节点耦合到ESD装置的第一端子。 每个第二电流开关的第二电流供应节点耦合到ESD装置的第二端子。 每个第一电流开关的第一电流采集节点耦合到相应的第二电流开关的第二电流采集节点。 每个第一当前交换机中的第一当前收集节点不耦合到任何其它第一当前收集节点，并且类似地，每个实例中的第二当前收集节点第二当前交换机不耦合到任何其它第二当前收集节点。
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公开(公告)号：US11527530B2
公开(公告)日：2022-12-13
申请号：US17321492
申请日：2021-05-16
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Krishna Praveen Mysore Rajagopal , James Paul DiSarro , Ann Margaret Concannon , Rajkumar Sankaralingam
Abstract: An ESD protection system including structure to operate an IC during nominal conditions, to protect the IC during an ESD event, and to allow the IC to operate during slow rising input node voltages that exceed nominal conditions.
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