公开(公告)号：US20230178649A1

公开(公告)日：2023-06-08

申请号：US18161515

申请日：2023-01-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Christopher Boguslaw KOCON

IPC: H01L29/78 ,  H01L29/267 ,  H01L29/66 ,  H01L29/40

CPC classification number: H01L29/7816 ,  H01L29/267 ,  H01L29/404 ,  H01L29/66431 ,  H01L29/66462

Abstract: A semiconductor device includes a first semiconductor structure. The first semiconductor structure includes a first semiconductor material having a band-gap. The first semiconductor structure has a first surface. An insulating layer has first and second opposing surfaces. The first surface of the insulating layer is on the first surface of the first semiconductor structure. A second semiconductor structure is on the second surface of the insulating layer and includes a second semiconductor material having a band-gap that is smaller than the band-gap of the first semiconductor material. A floating electrode couples the first semiconductor structure to the second semiconductor structure.

公开(公告)号：US20160359039A1

公开(公告)日：2016-12-08

申请号：US15238812

申请日：2016-08-17

Applicant: Texas Instruments Incorporated

Inventor： Hideaki KAWAHARA ,  Christopher Boguslaw KOCON ,  Simon John MOLLOY ,  Jayhoon CHUNG ,  John Manning Savidge NEILSON

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/7811 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/404 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66727 ,  H01L29/7813

Abstract: A semiconductor device includes a vertical MOS transistor with a plurality of parallel RESURF drain trenches separated by a constant spacing in a vertical drain drift region. The vertical MOS transistor has chamfered corners; each chamfered corner extends across at least five of the drain trenches. A RESURF termination trench surrounds the drain trenches, separated from sides and ends of the drain trenches by distances which are functions of the drain trench spacing. At the chamfered corners, the termination trench includes external corners which extend around an end of a drain trench which extends past an adjacent drain trench, and includes internal corners which extend past an end of a drain trench which is recessed from an adjacent drain trench. The termination trench is separated from the drain trenches at the chamfered corners by distances which are also functions of the drain trench spacing.

公开(公告)号：US20230115019A1

公开(公告)日：2023-04-13

申请号：US18066511

申请日：2022-12-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Christopher Boguslaw KOCON ,  Henry Litzmann EDWARDS

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/417 ,  H01L29/45 ,  H01L29/16 ,  H01L29/20 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes a switch element having a surface and first and second regions and including a first semiconductor material having a band-gap. The first region of the switch element is coupled to a source contact. A floating electrode has first and second ends. The first end of the floating electrode is coupled to the second region of the switch element. A voltage-support structure includes a second semiconductor material having a band-gap that is larger than the band-gap of the first semiconductor material. The voltage-support structure is in contact with the second end of the floating electrode. A drain contact is coupled to the voltage-support structure.

公开(公告)号：US20220199826A1

公开(公告)日：2022-06-23

申请号：US17130969

申请日：2020-12-22

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Christopher Boguslaw KOCON

IPC: H01L29/78 ,  H01L29/267 ,  H01L29/40 ,  H01L29/66

Abstract: A semiconductor device includes a first semiconductor structure. The first semiconductor structure includes a first semiconductor material having a band-gap. The first semiconductor structure has a first surface. An insulating layer has first and second opposing surfaces. The first surface of the insulating layer is on the first surface of the first semiconductor structure. A second semiconductor structure is on the second surface of the insulating layer and includes a second semiconductor material having a band-gap that is smaller than the band-gap of the first semiconductor material. A floating electrode couples the first semiconductor structure to the second semiconductor structure.

公开(公告)号：US20130193502A1

公开(公告)日：2013-08-01

申请号：US13744097

申请日：2013-01-17

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Christopher Boguslaw KOCON ,  Hideaki KAWAHARA ,  Simon John MOLLOY ,  Satoshi SUZUKI ,  John Manning Savidge NEILSON

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7833 ,  H01L21/31105 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/66181 ,  H01L29/66712 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7831

Abstract: A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are electrically coupled to a source electrode of the MOSFET. A split gate with a central opening is disposed above the drain drift region between the RESURF trenches. A two-level LDD region is disposed below the central opening in the split gate. A contact metal stack makes contact with a source region at lateral sides of the triple contact structure, and with a body contact region and the field plates in the RESURF trenches at a bottom surface of the triple contact structure. A perimeter RESURF trench surrounds the MOSFET. A field plate in the perimeter RESURF trench is electrically coupled to the source electrode of the MOSFET. An integrated snubber may be formed in trenches formed concurrently with the RESURF trenches.

Abstract translation: 半导体器件包括中等电压MOSFET，其在包含场耦合到MOSFET的源电极的场板的RESURF沟槽之间具有垂直漏极漂移区。 具有中心开口的分流栅设置在RESURF沟槽之间的漏极漂移区的上方。 两级LDD区域设置在分裂门的中心开口下方。 接触金属叠层与三接触结构的侧面处的源极区域接触，并且在三触点结构的底表面处与主体接触区域和RESURF沟槽中的场板接触。 周边RESURF沟槽围绕着MOSFET。 外围RESURF沟槽中的场板电耦合到MOSFET的源电极。 集成缓冲器可以形成在与RESURF沟槽同时形成的沟槽中。

公开(公告)号：US20220209007A1

公开(公告)日：2022-06-30

申请号：US17136816

申请日：2020-12-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Christopher Boguslaw KOCON ,  Henry Litzmann EDWARDS

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/417 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20 ,  H01L29/66 ,  H01L29/45

Abstract: A semiconductor device includes a switch element having a surface and first and second regions and including a first semiconductor material having a band-gap. The first region of the switch element is coupled to a source contact. A floating electrode has first and second ends. The first end of the floating electrode is coupled to the second region of the switch element. A voltage-support structure includes a second semiconductor material having a band-gap that is larger than the band-gap of the first semiconductor material. The voltage-support structure is in contact with the second end of the floating electrode. A drain contact is coupled to the voltage-support structure.

公开(公告)号：US20150357461A1

公开(公告)日：2015-12-10

申请号：US14299051

申请日：2014-06-09

Applicant: Texas Instruments Incorporated

Inventor： Hideaki KAWAHARA ,  Christopher Boguslaw KOCON ,  Simon John MOLLOY ,  Jayhoon CHUNG ,  John Manning Savidge NEILSON

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L29/7811 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/404 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66727 ,  H01L29/7813

Abstract: A semiconductor device includes a vertical MOS transistor with a plurality of parallel RESURF drain trenches separated by a constant spacing in a vertical drain drift region. The vertical MOS transistor has chamfered corners; each chamfered corner extends across at least five of the drain trenches. A RESURF termination trench surrounds the drain trenches, separated from sides and ends of the drain trenches by distances which are functions of the drain trench spacing. At the chamfered corners, the termination trench includes external corners which extend around an end of a drain trench which extends past an adjacent drain trench, and includes internal corners which extend past an end of a drain trench which is recessed from an adjacent drain trench. The termination trench is separated from the drain trenches at the chamfered corners by distances which are also functions of the drain trench spacing.

Abstract translation: 半导体器件包括具有在垂直漏极漂移区域中以恒定间隔分开的多个并联RESURF漏极沟槽的垂直MOS晶体管。 垂直MOS晶体管有倒角; 每个倒角都延伸穿过至少五个漏极沟槽。 RESURF端接沟槽围绕漏极沟槽，从漏极沟槽的侧面和端部分离出作为漏极沟槽间隔的函数的距离。 在倒角处，终端沟槽包括围绕漏极沟槽的一端延伸的外部角部，该沟槽延伸穿过相邻的漏极沟槽，并且包括延伸穿过从相邻漏极沟槽凹陷的漏极沟槽的端部的内部角部。 端接沟槽在倒角处与漏极沟槽分开，距离也是漏极沟槽间隔的函数。

公开(公告)号：US20150145036A1

公开(公告)日：2015-05-28

申请号：US14559390

申请日：2014-12-03

Applicant: Texas Instruments Incorporated

Inventor： Christopher Boguslaw KOCON ,  Marie DENISON ,  Taylor Efland

IPC: H01L27/088 ,  H01L29/78

CPC classification number: H01L27/088 ,  H01L27/0922 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7809 ,  H01L29/7816 ,  H01L29/7835

Abstract: A semiconductor device containing a high voltage MOS transistor with a drain drift region over a lower drain layer and channel regions laterally disposed at the top surface of the substrate. RESURF trenches cut through the drain drift region and body region parallel to channel current flow. The RESURF trenches have dielectric liners and electrically conductive RESURF elements on the liners. Source contact metal is disposed over the body region and source regions. A semiconductor device containing a high voltage MOS transistor with a drain drift region over a lower drain layer, and channel regions laterally disposed at the top surface of the substrate. RESURF trenches cut through the drain drift region and body region perpendicular to channel current flow. Source contact metal is disposed in a source contact trench and extended over the drain drift region to provide a field plate.

Abstract translation: 一种半导体器件，其包含在下漏极层上方具有漏极漂移区域的高电压MOS晶体管和横向设置在衬底顶表面处的沟道区域。 RESURF沟槽穿过漏极漂移区域和与通道电流流动平行的体区域。 RESURF沟槽在衬垫上具有电介质衬垫和导电RESURF元件。 源接触金属设置在身体区域和源区域上。 一种半导体器件，其包含在下漏极层上具有漏极漂移区域的高电压MOS晶体管，以及横向设置在衬底顶表面处的沟道区域。 RESURF沟槽穿过垂直于沟道电流的漏极漂移区域和体区。 源极接触金属设置在源极接触沟槽中并在漏极漂移区域上延伸以提供场板。

公开(公告)号：US20140308787A1

公开(公告)日：2014-10-16

申请号：US14315701

申请日：2014-06-26

Applicant: Texas Instruments Incorporated

Inventor： Christopher Boguslaw KOCON

IPC: H01L29/66

CPC classification number: H01L29/66681 ,  H01L27/0629 ,  H01L27/0733 ,  H01L28/24 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/66659 ,  H01L29/66727 ,  H01L29/7803 ,  H01L29/7835 ,  H01L29/94

Abstract: A semiconductor device containing an extended drain MOS transistor with an integrated snubber formed by forming a drain drift region of the MOS transistor, forming a snubber capacitor including a capacitor dielectric layer and capacitor plate over the extended drain, and forming a snubber resistor over a gate of the MOS transistor so that the resistor is connected in series between the capacitor plate and a source of the MOS transistor.

Abstract translation: 一种半导体器件，其包含具有集成缓冲器的扩展漏极MOS晶体管，该集成缓冲器通过形成MOS晶体管的漏极漂移区域，在扩展漏极上形成包括电容器介电层和电容器板的缓冲电容器，并在栅极上形成缓冲电阻器 使得电阻器串联连接在电容器板和MOS晶体管的源极之间。