公开(公告)号：US09748376B2

公开(公告)日：2017-08-29

申请号：US15248521

申请日：2016-08-26

Applicant: Texas Instruments Incorporated

Inventor： David J Baldwin ,  Gary Eugene Daum ,  Simon John Molloy ,  Abidur Rahman

IPC: H01L29/10 ,  H01L29/78 ,  H01L27/02 ,  H01L29/66 ,  H01L21/225 ,  H01L21/762 ,  H01L21/763 ,  H01L29/08

CPC classification number: H01L29/7815 ,  H01L21/2253 ,  H01L21/76224 ,  H01L21/763 ,  H01L27/0266 ,  H01L27/027 ,  H01L29/0634 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66719 ,  H01L29/7811

Abstract: A semiconductor device and a method of making are disclosed. The device includes a substrate, a power field effect transistor (FET), and integrated sensors including a current sensor, a high current fault sensor, and a temperature sensor. The structure of the power FET includes a drain contact region of a first conductivity type disposed in the substrate, a drain drift region of the first conductivity type disposed over the drain contact region, doped polysilicon trenches disposed in the drain drift region, a body region of a second conductivity type, opposite from the first conductivity type, disposed between the doped polysilicon trenches, a source region disposed on a lateral side of the doped polysilicon trenches and in contact with the body region, and a source contact trench that makes contact with the source region and with the doped polysilicon trenches.

公开(公告)号：US20170179278A1

公开(公告)日：2017-06-22

申请号：US15248521

申请日：2016-08-26

Applicant: Texas Instruments Incorporated

Inventor： David J Baldwin ,  Gary Eugene Daum ,  Simon John Molloy ,  Abidur Rahman

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L21/762 ,  H01L21/763 ,  H01L27/02 ,  H01L21/225

CPC classification number: H01L29/7815 ,  H01L21/2253 ,  H01L21/76224 ,  H01L21/763 ,  H01L27/0266 ,  H01L27/027 ,  H01L29/0634 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66719 ,  H01L29/7811

Abstract: A semiconductor device and a method of making are disclosed. The device includes a substrate, a power field effect transistor (FET), and integrated sensors including a current sensor, a high current fault sensor, and a temperature sensor. The structure of the power FET includes a drain contact region of a first conductivity type disposed in the substrate, a drain drift region of the first conductivity type disposed over the drain contact region, doped polysilicon trenches disposed in the drain drift region, a body region of a second conductivity type, opposite from the first conductivity type, disposed between the doped polysilicon trenches, a source region disposed on a lateral side of the doped polysilicon trenches and in contact with the body region, and a source contact trench that makes contact with the source region and with the doped polysilicon trenches.

公开(公告)号：US10422818B2

公开(公告)日：2019-09-24

申请号：US15859470

申请日：2017-12-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Tikno Harjono ,  Vijay Krishnamurthy ,  Min Chu ,  Kuntal Joardar ,  Gary Eugene Daum ,  Subrato Roy ,  Vinayak Hegde ,  Ankur Chauhan ,  Sathish Vallamkonda ,  Md Abidur Rahman ,  Eung Jung Kim

IPC: G01R15/14 ,  H01L27/06 ,  H03K17/567 ,  H01L25/18 ,  H01L49/02

Abstract: An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.