公开(公告)号：US20190259777A1

公开(公告)日：2019-08-22

申请号：US16398386

申请日：2019-04-30

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yasuhito YOSHIMIZU ,  Akifumi GAWASE ,  Kei WATANABE ,  Shinya ARAI

IPC: H01L27/11582 ,  H01L21/764

Abstract: According to one embodiment, a semiconductor device includes a substrate, a stacked body, a second air gap, a first insulating film, a semiconductor film, and a stacked film. The stacked body is provided above the substrate and includes a plurality of electrode films stacked via a first air gap. The second air gap extends in a stacking direction of the stacked body. The second air gap separates the stacked body in a first direction crossing the stacking direction. The first insulating film is provided above the stacked body and covers an upper end of the second air gap. The stacked film is provided between a side surface of the electrode film and a side surface of the semiconductor film opposed to the side surface of the electrode film. The stacked film is in contact with the side surface of the electrode film and the side surface of the semiconductor film.

公开(公告)号：US20190279932A1

公开(公告)日：2019-09-12

申请号：US16103106

申请日：2018-08-14

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi WAKATSUKI ,  Masayuki KITAMURA ,  Takeshi ISHIZAKI ,  Hiroshi ITOKAWA ,  Daisuke IKENO ,  Kei WATANABE ,  Atsuko SAKATA

IPC: H01L23/522 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/532 ,  H01L21/28 ,  H01L21/768

Abstract: In one embodiment, a semiconductor device includes a first insulator. The device further includes a metal layer that includes a first metal layer provided on a surface of the first insulator, and a second metal layer provided on a surface of the first metal layer and containing a first metallic element and oxygen or containing aluminum and nitrogen, or includes a third metal layer provided on the surface of the first insulator and containing a second metallic element, aluminum and nitrogen. The device further includes an interconnect material layer provided on a surface of the metal layer.