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公开(公告)号：US20180053633A1
公开(公告)日：2018-02-22
申请号：US15802854
申请日：2017-11-03
Applicant: TRUMPF Huettinger Sp. z o. o.
Inventor： Wojciech Glazek , Rafal Bugyi
IPC: H01J37/32
CPC classification number: H01J37/32183 , H01J37/32174 , H01J37/32926 , H01J37/32935 , H01J37/3299 , H03H7/38
Abstract: A plasma impedance matching unit for a plasma power supply system includes a first power connector for coupling the matching unit to a RF power source, a second power connector for coupling the matching unit to a plasma load, a data link interface for directly coupling the matching unit to another plasma impedance matching unit via a data link, and a controller configured to control the matching unit to match an impedance from the first power connector to an impedance at the second power connector, to operate as a master for at least one other impedance matching unit and/or at least one RF power source of the plasma power supply system, and to communicate via the data link interface with the at least one other impedance matching unit and/or the at least one RF power source of the plasma power supply system.
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Patent Agency Ranking
公开(公告)号：US09818579B2
公开(公告)日：2017-11-14
申请号：US14325499
申请日：2014-07-08
Applicant: TRUMPF Huettinger Sp. z o. o.
Inventor： Pawel Ozimek , Rafal Bugyi , Robert Dziuba , Andrzej Klimczak , Marcin Zelechowski
CPC classification number: H01J37/32064 , H01J37/32091 , H01J37/32174 , H01M10/42 , H01M10/425 , H01M10/4264 , H01M10/44 , H05H1/36 , Y02E60/12
Abstract: According to a first aspect of the present invention, reducing electrical energy stored in a load or in one or more leads for connecting a power supply with the load is achieved by plasma process power circuitry including a switch in operative connection with at least one of the leads for enabling/interrupting power to the load; a first electrical nonlinear device; an energy storing device arranged in series with the first electrical nonlinear device; and a pre-charging circuit in operative connection with the energy storing device, the pre-charging circuit configured to charge the energy storing device to a pre-determined energy level while power to the load is enabled.
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公开(公告)号：US20150354052A1
公开(公告)日：2015-12-10
申请号：US14831059
申请日：2015-08-20
Inventor： Rafal Bugyi , Jaroslav Vlcek , Jiri Rezek , Jan Lazar
CPC classification number: C23C14/0042 , C23C14/0094 , C23C14/08 , C23C14/548 , H01J37/3467
Abstract: A method of controlling a reactive sputter deposition process includes selecting a control process parameter for a target material and a reactive gas, the target material included in a target acting as a cathode, the reactive sputter deposition process involving forming a compound from a reaction between the target material and reactive gas species associated with the reactive gas in a vacuum chamber; establishing an operation regime for the reactive sputter deposition process for a given target power; and performing, based on the selected control process parameter and the established operation regime, the reactive sputter deposition process in a transition region between a metallic mode and a covered mode through a controlled pulsed reactive gas flow rate into the vacuum chamber, such that a stabilized reactive deposition of the compound on a substrate is achieved, the deposited compound on the substrate comprising a dielectric stoichiometric film.
Abstract translation: 一种控制反应性溅射沉积工艺的方法包括：选择目标材料和反应性气体的控制过程参数，反应气体，包含在作为阴极的靶中的目标材料，反应性溅射沉积工艺涉及由 与真空室中的反应性气体相关的目标材料和反应性气体物质; 建立用于给定目标功率的反应溅射沉积工艺的操作方案; 以及基于所选择的控制过程参数和建立的操作状态，通过进入真空室的受控的脉冲反应气体流量，在金属模式和覆盖模式之间的过渡区域中执行反应溅射沉积工艺，使得稳定的 实现了化合物在基片上的反应沉积，沉积在基底上的化合物包括介电化学计量的薄膜。
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公开(公告)号：US20140320015A1
公开(公告)日：2014-10-30
申请号：US14325499
申请日：2014-07-08
Applicant: TRUMPF Huettinger Sp. z o. o.
Inventor： Pawel Ozimek , Rafal Bugyi , Robert Dziuba , Andrzej Klimczak , Marcin Zelechowski
IPC: H01J37/32
CPC classification number: H01J37/32064 , H01J37/32091 , H01J37/32174 , H01M10/42 , H01M10/425 , H01M10/4264 , H01M10/44 , H05H1/36 , Y02E60/12
Abstract: According to a first aspect of the present invention, reducing electrical energy stored in a load or in one or more leads for connecting a power supply with the load is achieved by plasma process power circuitry including a switch in operative connection with at least one of the leads for enabling/interrupting power to the load; a first electrical nonlinear device; an energy storing device arranged in series with the first electrical nonlinear device; and a pre-charging circuit in operative connection with the energy storing device, the pre-charging circuit configured to charge the energy storing device to a pre-determined energy level while power to the load is enabled.
Abstract translation: 根据本发明的第一方面，通过等离子体处理电源电路来实现减少存储在负载中的电能或用于连接电源与负载的一个或多个引线中的电能，该等离子体处理电源电路包括与至少一个 导线用于启用/中断负载电源; 第一电气非线性装置; 与第一电气非线性装置串联布置的能量存储装置; 以及与所述能量存储装置可操作地连接的预充电电路，所述预充电电路被配置为在能量到所述负载的电力的同时将所述能量存储装置充电到预定的能量水平。
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公开(公告)号：US10410835B2
公开(公告)日：2019-09-10
申请号：US15802854
申请日：2017-11-03
Applicant: TRUMPF Huettinger Sp. z o. o.
Inventor： Wojciech Glazek , Rafal Bugyi
Abstract: A plasma impedance matching unit for a plasma power supply system includes a first power connector for coupling the matching unit to a RF power source, a second power connector for coupling the matching unit to a plasma load, a data link interface for directly coupling the matching unit to another plasma impedance matching unit via a data link, and a controller configured to control the matching unit to match an impedance from the first power connector to an impedance at the second power connector, to operate as a master for at least one other impedance matching unit and/or at least one RF power source of the plasma power supply system, and to communicate via the data link interface with the at least one other impedance matching unit and/or the at least one RF power source of the plasma power supply system.
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公开(公告)号：US09637814B2
公开(公告)日：2017-05-02
申请号：US14831059
申请日：2015-08-20
Inventor： Rafal Bugyi , Jaroslav Vlcek , Jiri Rezek , Jan Lazar
CPC classification number: C23C14/0042 , C23C14/0094 , C23C14/08 , C23C14/548 , H01J37/3467
Abstract: A method of controlling a reactive sputter deposition process includes selecting a control process parameter for a target material and a reactive gas, the target material included in a target acting as a cathode, the reactive sputter deposition process involving forming a compound from a reaction between the target material and reactive gas species associated with the reactive gas in a vacuum chamber; establishing an operation regime for the reactive sputter deposition process for a given target power; and performing, based on the selected control process parameter and the established operation regime, the reactive sputter deposition process in a transition region between a metallic mode and a covered mode through a controlled pulsed reactive gas flow rate into the vacuum chamber, such that a stabilized reactive deposition of the compound on a substrate is achieved, the deposited compound on the substrate comprising a dielectric stoichiometric film.
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