摘要:
A noise free transceiver circuit includes a communication line, a power source line, a ground line, an output transistor having output terminals connected between the communication line and the ground line for outputting a communication signal to the communication line, a first circuit for applying a trapezoidal signal to the input terminal of the output transistor to turn on in synchronism with a transmission signal and a second circuit for turning off the output transistor when the level of the transmission signal is high. The output transistor is turned off when the communication signal is outputted. Therefore, noises of the power line are shut out of the output transistor.
摘要:
An overcurrent protecting device for protecting a semiconductor element from an overcurrent includes: the semiconductor element; a shunt resistor for detecting the overcurrent when the electric current in the semiconductor element exceeds a threshold value; a reference resistor for setting the threshold value; a constant electric current circuit for supplying a constant electric current to the reference resistor; and a comparator for comparing a terminal voltage of the shunt resistor and a terminal voltage of the reference resistor. The shunt resistor is made of a same kind of resistor as the reference resistor.
摘要:
A noise free transceiver circuit includes a communication line, a power source line, a ground line, an output transistor having output terminals connected between the communication line and the ground line for outputting a communication signal to the communication line, a first circuit for applying a trapezoidal signal to the input terminal of the output transistor to turn on in synchronism with a transmission signal and a second circuit for turning off the output transistor when the level of the transmission signal is high. The output transistor is turned off when the communication signal is outputted. Therefore, noises of the power line are shut out of the output transistor.
摘要:
An overcurrent protecting device for protecting a semiconductor element from an overcurrent includes: the semiconductor element; a shunt resistor for detecting the overcurrent when the electric current in the semiconductor element exceeds a threshold value; a reference resistor for setting the threshold value; a constant electric current circuit for supplying a constant electric current to the reference resistor; and a comparator for comparing a terminal voltage of the shunt resistor and a terminal voltage of the reference resistor. The shunt resistor is made of a same kind of resistor as the reference resistor.
摘要:
A signal detecting device detects, as analog voltage signals, a current flowing through an exciting coil of an electric power generator, a source voltage and a temperature of a regulator that change as a current is fed to the exciting coil by an FET. These analog voltage signals are subjected to A/D conversion by a single A/D converter circuit. The detected current is subjected to A/D conversion in a period during which the FET is ON, while the detected source voltage and the detected temperature are subjected to A/D conversion in a period during which the FET is OFF.
摘要:
A signal detecting device detects, as analog voltage signals, a current flowing through an exciting coil of an electric power generator, a source voltage and a temperature of a regulator that change as a current is fed to the exciting coil by an FET. These analog voltage signals are subjected to A/D conversion by a single A/D converter circuit. The detected current is subjected to A/D conversion in a period during which the FET is ON, while the detected source voltage and the detected temperature are subjected to A/D conversion in a period during which the FET is OFF.
摘要:
A plasmid vector having components (D1), (D2), and (D3) enables the efficient integration of foreign DNA into host cells. The components are (D1) an integrase gene, (D2) a segment of DNA forming a region for controlling the expression of the integrase gene, and (D3) a segment of DNA serving as an integrase recognition region when integrase catalyzes the integration reaction.
摘要:
The resistance to electromigration in a double-layer Al wiring structure of lateral DMOS or the like is improved by further reducing ON resistance and mitigating current concentration. The first-layer source wiring and the first-layer drain wiring which are electrically connected to a plurality of source cells and drain cells respectively are formed into a pectinate pattern respectively. The second-layer source wiring and the second-layer drain wiring are also formed into a pectinate pattern respectively and disposed in inclination at 45 degrees to the patterns of the first-layer source wiring and first-layer drain wiring. At the intersections of the first-layer source wiring and the second-layer source wiring, at the intersections of the first-layer drain wiring and the second-layer drain wiring, at the outer circumferential portions of the pectinate patterns of first-layer source and drain wirings and at the source and drain pads, contact holes are provided on a layer insulation film to make a contact between the first-layer source and drain wirings and the second-layer source and drain wirings, respectively.
摘要:
A temperature detection circuit includes a bandgap reference voltage generation circuit, a detection output circuit, and an output conversion circuit. The bandgap reference voltage generation circuit generates a first reference voltage and causes a bias current to flow through a current path to produce a thermal voltage. The current path has a first resistor. The detection output circuit has a second resistor and causes a mirror current of the bias current to flow through the second resistor. The output conversion circuit uses a second reference voltage to convert a voltage drop across the second resistor to a predetermined output form to detect a temperature. The first and second resistors are substantially identical in temperature dependence. The second reference voltage is generated from the first reference voltage.
摘要:
A flexible printed circuit board (FPC) is disclosed which can eliminate the need for forming through holes and ensure the strength required for mounting components. The FPC has a metal foil layer formed only on one side of an insulating layer via an adhesive layer. The FPC is configured such that the insulating layer and the adhesive layer are partially removed, and the surface of the metal foil layer on the side from which the insulating layer and the adhesive layer have been removed is flattened. In a region from which the insulating layer and the adhesive layer have been removed, an overcoat layer for reinforcing the metal foil layer is provided along the metal foil layer on a surface opposite to the flattened surface. A drive IC is mounted on a first metal foil face of the metal foil layer and on a second metal foil face which is the flattened surface of the metal foil layer, and is provided with electrical conduction by the metal foil layer. To form the FPC, the insulating layer and the metal foil layer can be directly affixed to each other without using the adhesive layer.