公开(公告)号：US20230154765A1

公开(公告)日：2023-05-18

申请号：US17651329

申请日：2022-02-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee

IPC: H01L21/56 ,  H01L21/768 ,  H01L21/02 ,  H01L21/48

CPC classification number: H01L21/56 ,  H01L21/76898 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/4857 ,  H01L21/486 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L25/105

Abstract: A method includes bonding a first wafer to a second wafer, and performing a trimming process on the first wafer. An edge portion of the first wafer is removed. After the trimming process, the first wafer has a first sidewall laterally recessed from a second sidewall of the second wafer. A protection layer is deposited and contacting a sidewall of the first wafer, which deposition process includes depositing a non-oxygen-containing material in contact with the first sidewall. The method further includes removing a horizontal portion of the protection layer that overlaps the first wafer, and forming an interconnect structure over the first wafer. The interconnect structure is electrically connected to integrated circuit devices in the first wafer.

公开(公告)号：US11062901B2

公开(公告)日：2021-07-13

申请号：US16569791

申请日：2019-09-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Cheng Chou ,  Po-Cheng Shih ,  Li Chun Te ,  Tien-I Bao

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  C23C16/30 ,  H01L23/532 ,  H01L23/535

Abstract: Embodiments described herein relate generally to methods for forming low-k dielectrics and the structures formed thereby. In some embodiments, a dielectric is formed over a semiconductor substrate. The dielectric has a k-value equal to or less than 3.9. Forming the dielectric includes using a plasma enhanced chemical vapor deposition (PECVD). The PECVD includes flowing a diethoxymethylsilane (mDEOS, C5H14O2Si) precursor gas, flowing an oxygen (O2) precursor gas; and flowing a carrier gas. A ratio of a flow rate of the mDEOS precursor gas to a flow rate of the carrier gas is less than or equal to 0.2.

公开(公告)号：US20210183646A1

公开(公告)日：2021-06-17

申请号：US17183807

申请日：2021-02-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Cheng Chou ,  Po-Cheng Shih ,  Li Chun Te ,  Tien-I Bao

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  C23C16/30 ,  H01L23/532 ,  H01L23/535

Abstract: Embodiments described herein relate generally to methods for forming low-k dielectrics and the structures formed thereby. In some embodiments, a dielectric is formed over a semiconductor substrate. The dielectric has a k-value equal to or less than 3.9. Forming the dielectric includes using a plasma enhanced chemical vapor deposition (PECVD). The PECVD includes flowing a diethoxymethylsilane (mDEOS, C5H14O2Si) precursor gas, flowing an oxygen (O2) precursor gas; and flowing a carrier gas. A ratio of a flow rate of the mDEOS precursor gas to a flow rate of the carrier gas is less than or equal to 0.2.

公开(公告)号：US20240178059A1

公开(公告)日：2024-05-30

申请号：US18431346

申请日：2024-02-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/535

CPC classification number: H01L21/7682 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76895 ,  H01L23/5329 ,  H01L23/535

Abstract: A structure includes a first conductive feature, a first etch stop layer over the first conductive feature, a dielectric layer over the first etch stop layer, and a second conductive feature in the dielectric layer and the first etch stop layer. The second conductive feature is over and contacting the first conductive feature. An air spacer encircles the second conductive feature, and sidewalls of the second conductive feature are exposed to the air spacer. A protection ring further encircles the second conductive feature, and the protection ring fully separates the second conductive feature from the air spacer.

公开(公告)号：US10163691B2

公开(公告)日：2018-12-25

申请号：US15707657

申请日：2017-09-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Cheng Shih ,  Chia Cheng Chou ,  Chung-Chi Ko

IPC: H01L21/768 ,  H01L21/3105 ,  H01L21/311

Abstract: A method of fabricating a semiconductor device includes forming a low-k dielectric layer over a substrate and depositing a cap layer over the low-k dielectric layer. A treatment process is performed to the cap layer. After the treatment process to the cap layer is performed, the low-k dielectric layer is etched to form a plurality of trenches using the cap layer as an etching mask.

公开(公告)号：US11929281B2

公开(公告)日：2024-03-12

申请号：US17480201

申请日：2021-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/535

CPC classification number: H01L21/7682 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76895 ,  H01L23/5329 ,  H01L23/535

Abstract: A structure includes a first conductive feature, a first etch stop layer over the first conductive feature, a dielectric layer over the first etch stop layer, and a second conductive feature in the dielectric layer and the first etch stop layer. The second conductive feature is over and contacting the first conductive feature. An air spacer encircles the second conductive feature, and sidewalls of the second conductive feature are exposed to the air spacer. A protection ring further encircles the second conductive feature, and the protection ring fully separates the second conductive feature from the air spacer.

公开(公告)号：US10707165B2

公开(公告)日：2020-07-07

申请号：US15492243

申请日：2017-04-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Po-Cheng Shih ,  Chia Cheng Chou ,  Li Chun Te

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522

Abstract: A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesion layer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer. A protection layer is formed over the ELK dielectric layer. A hard mask is formed over the protection layer and is patterned to create a window. Layers underneath the window are removed to create an opening. The removed layers include the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer. A metal layer is formed in the opening.

公开(公告)号：US20200006059A1

公开(公告)日：2020-01-02

申请号：US16569791

申请日：2019-09-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Cheng Chou ,  Po-Cheng Shih ,  Li Chun Te ,  Tien-I Bao

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  C23C16/30 ,  H01L23/532 ,  H01L23/535

Abstract: Embodiments described herein relate generally to methods for forming low-k dielectrics and the structures formed thereby. In some embodiments, a dielectric is formed over a semiconductor substrate. The dielectric has a k-value equal to or less than 3.9. Forming the dielectric includes using a plasma enhanced chemical vapor deposition (PECVD). The PECVD includes flowing a diethoxymethylsilane (mDEOS, C5H14O2Si) precursor gas, flowing an oxygen (O2) precursor gas; and flowing a carrier gas. A ratio of a flow rate of the mDEOS precursor gas to a flow rate of the carrier gas is less than or equal to 0.2.

公开(公告)号：US10910216B2

公开(公告)日：2021-02-02

申请号：US15944627

申请日：2018-04-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Cheng Chou ,  Li Chun Te ,  Po-Cheng Shih ,  Tien-I Bao

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  C23C16/30 ,  H01L23/532 ,  H01L23/535

Abstract: Embodiments described herein relate generally to methods for forming low-k dielectrics and the structures formed thereby. In some embodiments, a dielectric is formed over a semiconductor substrate. The dielectric has a k-value equal to or less than 3.9. Forming the dielectric includes using a plasma enhanced chemical vapor deposition (PECVD). The PECVD includes flowing a diethoxymethylsilane (mDEOS, C5H14O2Si) precursor gas, flowing an oxygen (O2) precursor gas; and flowing a carrier gas. A ratio of a flow rate of the mDEOS precursor gas to a flow rate of the carrier gas is less than or equal to 0.2.

公开(公告)号：US20220406647A1

公开(公告)日：2022-12-22

申请号：US17480201

申请日：2021-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/532

Abstract: A structure includes a first conductive feature, a first etch stop layer over the first conductive feature, a dielectric layer over the first etch stop layer, and a second conductive feature in the dielectric layer and the first etch stop layer. The second conductive feature is over and contacting the first conductive feature. An air spacer encircles the second conductive feature, and sidewalls of the second conductive feature are exposed to the air spacer. A protection ring further encircles the second conductive feature, and the protection ring fully separates the second conductive feature from the air spacer.