公开(公告)号：US20230161241A1

公开(公告)日：2023-05-25

申请号：US17749033

申请日：2022-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Wei-Hao LEE ,  Ping-Hsun LIN ,  Ta-Cheng LIEN ,  Ching-Fang YU

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.

公开(公告)号：US20220342292A1

公开(公告)日：2022-10-27

申请号：US17481673

申请日：2021-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ping-Hsun LIN ,  Pei-Cheng HSU ,  Ching-Fang YU ,  Ta-Cheng LIEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F1/24

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.

公开(公告)号：US20250123552A1

公开(公告)日：2025-04-17

申请号：US18628337

申请日：2024-04-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Hsuan-I WANG ,  Ping-Hsun LIN ,  Ching-Fang YU ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F1/58 ,  G03F1/24 ,  G03F1/76 ,  G03F1/80 ,  G03F7/00

Abstract: An extreme ultraviolet (EUV) mask and method of forming an EUV mask are provided. The method includes forming a mask layer on a semiconductor wafer, generating extreme ultraviolet (EUV) light by a lithography exposure system, forming patterned EUV light by patterning the EUV light by a mask including an absorber having extinction coefficient at an EUV wavelength that exceeds extinction coefficients of TaBN and TaN at the EUV wavelength, and exposing the mask layer by the patterned EUV light.

公开(公告)号：US20250060660A1

公开(公告)日：2025-02-20

申请号：US18403574

申请日：2024-01-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yeh LEE ,  Ching-Fang YU ,  Hsueh-Wei HUANG ,  Yen-Cheng HO ,  Wei-Cheng LIN ,  Hsin-Yi YIN

IPC: G03F1/42

Abstract: A method includes: generating a designed mask overlay mark associated with an actual mask overlay mark to be formed in a mask; forming the actual mask overlay mark in the mask based on the designed mask overlay mark, the actual mask overlay mark including a plurality of overlay patterns; forming a device feature pattern adjacent to the actual mask overlay mark; forming an alignment of the mask by a mask metrology apparatus including a light source having a wavelength and a numerical aperture, wherein a pitch between adjacent two of the plurality of overlay patterns does not exceed the wavelength divided by twice the numerical aperture; and forming a pattern in a layer of a wafer by transferring the device feature pattern while the mask is under the alignment.

公开(公告)号：US20230375911A1

公开(公告)日：2023-11-23

申请号：US18365757

申请日：2023-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ping-Hsun LIN ,  Pei-Cheng HSU ,  Ching-Fang YU ,  Ta-Cheng LIEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.