公开(公告)号：US20210134339A1

公开(公告)日：2021-05-06

申请号：US17002351

申请日：2020-08-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： MingYuan Song ,  Shy-Jay Lin ,  Chien-Min Lee ,  William Joseph Gallagher

IPC: G11C11/16 ,  G01R33/09 ,  H01L43/08 ,  H01L43/10 ,  H01L43/04 ,  H01L43/14 ,  H01L27/22

Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

公开(公告)号：US20210408115A1

公开(公告)日：2021-12-30

申请号：US17216162

申请日：2021-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shy-Jay Lin ,  Chien-Min Lee ,  Hiroki Noguchi ,  MingYuan Song ,  Yen-Lin Huang ,  William Joseph Gallagher

IPC: H01L27/22 ,  H01L21/8234 ,  H01L21/768 ,  H01L23/528

Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.

公开(公告)号：US11289143B2

公开(公告)日：2022-03-29

申请号：US17002351

申请日：2020-08-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： MingYuan Song ,  Shy-Jay Lin ,  Chien-Min Lee ,  William Joseph Gallagher

IPC: G11C11/16 ,  G01R33/09 ,  H01L27/22 ,  H01L43/04 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

公开(公告)号：US12022665B2

公开(公告)日：2024-06-25

申请号：US18335816

申请日：2023-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shy-Jay Lin ,  Chien-Min Lee ,  Hiroki Noguchi ,  MingYuan Song ,  Yen-Lin Huang ,  William Joseph Gallagher

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/528 ,  H10B61/00

CPC classification number: H10B61/22 ,  H01L21/76898 ,  H01L21/823475 ,  H01L23/528

Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.

公开(公告)号：US20230345738A1

公开(公告)日：2023-10-26

申请号：US18335816

申请日：2023-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shy-Jay Lin ,  Chien-Min Lee ,  Hiroki Noguchi ,  MingYuan Song ,  Yen-Lin Huang ,  William Joseph Gallagher

IPC: H10B61/00 ,  H01L23/528 ,  H01L21/768 ,  H01L21/8234

CPC classification number: H10B61/22 ,  H01L23/528 ,  H01L21/76898 ,  H01L21/823475

Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.

公开(公告)号：US11699474B2

公开(公告)日：2023-07-11

申请号：US17696394

申请日：2022-03-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： MingYuan Song ,  Shy-Jay Lin ,  Chien-Min Lee ,  William Joseph Gallagher

IPC: G11C11/16 ,  G01R33/09 ,  H01L27/22 ,  H01L43/04 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  H10N52/01 ,  H10N52/80

CPC classification number: G11C11/1675 ,  G01R33/093 ,  G11C11/161 ,  H10B61/22 ,  H10N50/10 ,  H10N50/85 ,  H10N52/01 ,  H10N52/80

Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

公开(公告)号：US20220208244A1

公开(公告)日：2022-06-30

申请号：US17696394

申请日：2022-03-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： MingYuan Song ,  Shy-Jay Lin ,  Chien-Min Lee ,  William Joseph Gallagher

IPC: G11C11/16 ,  G01R33/09 ,  H01L27/22 ,  H01L43/10 ,  H01L43/04 ,  H01L43/14 ,  H01L43/08

Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

公开(公告)号：US20240315051A1

公开(公告)日：2024-09-19

申请号：US18679002

申请日：2024-05-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shy-Jay Lin ,  Chien-Min Lee ,  Hiroki Noguchi ,  MingYuan Song ,  Yen-Lin Huang ,  William Joseph Gallagher

IPC: H10B61/00 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/528

CPC classification number: H10B61/22 ,  H01L21/76898 ,  H01L21/823475 ,  H01L23/528

Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.

公开(公告)号：US20230326508A1

公开(公告)日：2023-10-12

申请号：US18321196

申请日：2023-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： MingYuan Song ,  Shy-Jay Lin ,  Chien-Min Lee ,  William Joseph Gallagher

IPC: H10N50/85 ,  H10N52/01 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N52/80 ,  G01R33/09

CPC classification number: G11C11/1675 ,  G01R33/093 ,  G11C11/161 ,  H10B61/22 ,  H10N50/10 ,  H10N50/85 ,  H10N52/01 ,  H10N52/80

Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

公开(公告)号：US11723218B2

公开(公告)日：2023-08-08

申请号：US17216162

申请日：2021-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shy-Jay Lin ,  Chien-Min Lee ,  Hiroki Noguchi ,  Mingyuan Song ,  Yen-Lin Huang ,  William Joseph Gallagher

IPC: H01L21/00 ,  H10B61/00 ,  H01L23/528 ,  H01L21/768 ,  H01L21/8234

CPC classification number: H10B61/22 ,  H01L21/76898 ,  H01L21/823475 ,  H01L23/528

Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.