Package structure
    3.
    发明授权

    公开(公告)号:US11978697B2

    公开(公告)日:2024-05-07

    申请号:US17575654

    申请日:2022-01-14

    发明人: Wen-Shiang Liao

    摘要: A package structure including a first radio frequency die, a second radio frequency die, an insulating encapsulant, a redistribution circuit structure, a first oscillation cavity and a second oscillation cavity is provided. A first frequency range of the first radio frequency die is different from a second frequency range of the second radio frequency die. The insulating encapsulant laterally encapsulates the first radio frequency die and the second radio frequency die. The redistribution circuit structure is disposed on the first radio frequency die, the second die and the insulating encapsulant. The first oscillation cavity is electrically connected to the first radio frequency die, and the second oscillation cavity is electrically connected to the second radio frequency die.

    PACKAGE STRUCTURE
    6.
    发明申请

    公开(公告)号:US20230015634A1

    公开(公告)日:2023-01-19

    申请号:US17575654

    申请日:2022-01-14

    发明人: Wen-Shiang Liao

    摘要: A package structure including a first radio frequency die, a second radio frequency die, an insulating encapsulant, a redistribution circuit structure, a first oscillation cavity and a second oscillation cavity is provided. A first frequency range of the first radio frequency die is different from a second frequency range of the second radio frequency die. The insulating encapsulant laterally encapsulates the first radio frequency die and the second radio frequency die. The redistribution circuit structure is disposed on the first radio frequency die, the second die and the insulating encapsulant. The first oscillation cavity is electrically connected to the first radio frequency die, and the second oscillation cavity is electrically connected to the second radio frequency die.

    METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE

    公开(公告)号:US20220342155A1

    公开(公告)日:2022-10-27

    申请号:US17862382

    申请日:2022-07-11

    摘要: A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.