摘要:
A method for manufacturing a potassium niobate deposited body includes: forming a buffer layer above a substrate composed of an R-plane sapphire substrate; forming above the buffer layer a potassium niobate layer or a potassium niobate solid solution layer that epitaxially grows in a (100) orientation in a pseudo cubic system expression; and forming an electrode layer above the potassium niobate layer or the potassium niobate solid solution layer, wherein a (100) plane of the potassium niobate layer or the potassium niobate solid solution layer is formed to tilt with a [11-20] direction vector as a rotation axis with respect to an R-plane (1-102) of the R-plane sapphire substrate.
摘要:
An angular rate sensor includes: a piezoelectric vibration device; and a detection section, wherein the piezoelectric vibration device includes a base substrate, a vibration section having a fixed end affixed to the base substrate and a free end that does not contact the base substrate, and a driving section formed above the vibration section for generating flexural vibration of the vibration section; the vibration section has a first support section, four (first-fourth) cantilever sections supported by the first support section, and a second support section that supports the first support section and equipped with the fixed end; the first support section has two center lines that are orthogonal to each other; the first cantilever section and the second cantilever section are symmetrical to each other through one of the center lines of the first support section in a plan view; the third cantilever section and the fourth cantilever section are symmetrical to each other through the one of the center lines of the first support section in a plan view; the first cantilever section and the fourth cantilever section are symmetrical to each other through the other of the center lines of the first support section in a plan view; the second cantilever section and the third cantilever section are symmetrical to each other through the other of the center lines of the first support section in a plan view; the driving section includes a lower electrode for driving section, a piezoelectric layer for driving section formed above the lower electrode for driving section, and an upper electrode for driving section formed above the piezoelectric layer for driving section; and the detection section is formed above the vibration section for detecting an angular rate of rotation applied to the vibration section, and has a lower electrode for detection section, a piezoelectric layer for detection section formed above the lower electrode for detection section, and an upper electrode for detection section formed above the piezoelectric layer for detection section.
摘要:
A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1
摘要:
A piezoelectric oscillator includes a substrate, a supporting section formed above the substrate, an oscillation section having one end affixed to the supporting section and another free end, and a driving section that is formed above the oscillation section and generates flexing vibration in the oscillation section. The driving section includes a first electrode, a piezoelectric layer formed above the first electrode, and a second electrode formed above the piezoelectric layer, and the oscillation section is composed of a material that is different from a material of the supporting section. The oscillation section is composed of single crystal silicon, and the supporting section is composed of polycrystal silicon or amorphous silicon.
摘要:
An acceleration sensor includes: a piezoelectric vibration device; an oscillation circuit; and a detection circuit, wherein the piezoelectric vibration device includes a substrate, an insulation layer formed above the substrate, a vibration section forming layer formed above the insulation layer, a vibration section formed in a cantilever shape in a first opening section that penetrates the vibration section forming layer and having a base section affixed to the vibration section forming layer and two beam sections extending from the base section, a second opening section that penetrates the insulation layer and formed below the first opening section and the vibration section, and a piezoelectric element section formed on each of the beam sections; the oscillation circuit vibrates the piezoelectric vibration device at a resonance frequency; and the detection circuit detects a change in the frequency of vibrations of the piezoelectric vibration device which is caused by an acceleration applied in a direction in which the beam sections extend, and outputs a signal corresponding to the acceleration based on the change in the frequency.
摘要:
A method for manufacturing a piezoelectric element includes the steps of: forming a first base substrate having an element to be transferred; forming a second base substrate; and transferring the element to be transferred from the first base substrate to the second base substrate. The step of forming the element to be transferred includes forming a first electrode above a first substrate, forming a piezoelectric layer above the first electrode, forming a second electrode above the piezoelectric layer, crystallizing the piezoelectric layer, forming a dielectric layer at least above the second electrode, and etching the dielectric layer such that at least a portion of the second electrode is exposed and the dielectric layer has a protrusion upwardly protruding with respect to the second electrode. The step of forming the second base substrate includes forming a third electrode above a second substrate, and the step of transferring includes bonding the element to be transferred and the second base substrate such that the second substrate is in contact with the protrusion and the second electrode is in contact with the third electrode.
摘要:
An acceleration sensor includes: a piezoelectric vibration device; an oscillation circuit; and a detection circuit, wherein the piezoelectric vibration device includes a substrate, an insulation layer formed above the substrate, a vibration section forming layer formed above the insulation layer, a vibration section formed in a cantilever shape in a first opening section that penetrates the vibration section forming layer, a second opening section that penetrates the insulation layer and formed below the first opening section and the vibration section, and a piezoelectric element section formed on the vibration section, the oscillation circuit vibrates the piezoelectric vibration device at a resonance frequency, and the detection circuit detects a change in the frequency of vibration of the piezoelectric vibration device which is caused by an acceleration applied in a direction in which the vibration section extends, and outputs a signal corresponding to the acceleration based on the change in the frequency.
摘要:
A tuning folk vibration device includes: a SOI substrate having a substrate, an oxide layer formed above the substrate and a semiconductor layer formed above the oxide layer; a tuning folk type vibration section that is formed by processing the semiconductor layer and the oxide layer and composed of the semiconductor layer; and a driving section for generating flexural vibration of the vibration section, wherein the vibration section includes a support section and two beam sections formed in a cantilever shape with the support section as a base of the beam sections, and the driving section includes a pair of drivers formed on each of the two beam sections, each of the drivers including a first electrode layer, a piezoelectric layer formed above the first electrode layer and a second electrode layer formed above the piezoelectric layer.
摘要:
A piezoelectric film laminate includes a lithium tantalate substrate, and a lead zirconate titanate niobate layer formed above the lithium tantalate substrate.
摘要:
A method for manufacturing a piezoelectric oscillator includes the steps of: forming a first semiconductor layer above a substrate; forming a second semiconductor layer above the first semiconductor layer; forming a first opening section that exposes the substrate by removing the second semiconductor layer and the first semiconductor layer in an area for forming a support section; forming the support section in the first opening section; forming a driving section that generates flexing vibration in an oscillation section above the second semiconductor layer; patterning the second semiconductor layer to form the oscillation section having the supporting section as a base end and another end provided so as not to contact the supporting section, and a second opening section that exposes the first semiconductor layer; and removing the first semiconductor layer through a portion exposed at the second opening section by an etching method, thereby forming a cavity section at least below the oscillation section, wherein the step of forming the driving section includes the steps of forming a first electrode, forming a piezoelectric layer above the first electrode, and forming a second electrode above the piezoelectric layer.