公开(公告)号：US20080308762A1

公开(公告)日：2008-12-18

申请号：US12175794

申请日：2008-07-18

申请人： Mayumi UENO ,  Takamitsu HIGUCHI ,  Takeshi KIJIMA

发明人： Mayumi UENO ,  Takamitsu HIGUCHI ,  Takeshi KIJIMA

IPC分类号： H01L41/18

CPC分类号： H01L41/18 ,  B41J2/14201 ,  H01L41/0815 ,  H01L41/1873 ,  H01L41/318 ,  H03H9/02031 ,  H03H9/02574

摘要： A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1

摘要翻译： 一种压电层压板，包括在基底上形成的底部和第一压电层，并包括铌酸钾钠。 第一压电层由组成式（KaNa1-a）xNbO3表示，组成式中的“a”和“x”分别为0.1

公开(公告)号：US20070216261A1

公开(公告)日：2007-09-20

申请号：US11685431

申请日：2007-03-13

申请人： Takamitsu HIGUCHI ,  Takeshi KIJIMA ,  Mayumi UENO

发明人： Takamitsu HIGUCHI ,  Takeshi KIJIMA ,  Mayumi UENO

IPC分类号： H01L41/187 ,  H01L41/00

CPC分类号： H01L41/187 ,  H03H9/02574

摘要： A piezoelectric film laminate includes a lithium tantalate substrate, and a lead zirconate titanate niobate layer formed above the lithium tantalate substrate.

摘要翻译： 压电薄膜层叠体包括钽酸锂基材和形成在钽酸锂基材上方的锆钛酸铅铌酸铅层。

公开(公告)号：US20080229824A1

公开(公告)日：2008-09-25

申请号：US12050228

申请日：2008-03-18

申请人： Takamitsu HIGUCHI ,  Yasuhiro ONO

发明人： Takamitsu HIGUCHI ,  Yasuhiro ONO

IPC分类号： G01P1/00 ,  H02N2/04

CPC分类号： G01C19/5621

摘要： An angular rate sensor includes: a piezoelectric vibration device; and a detection section, wherein the piezoelectric vibration device includes a base substrate, a vibration section having a fixed end affixed to the base substrate and a free end that does not contact the base substrate, and a driving section formed above the vibration section for generating flexural vibration of the vibration section; the vibration section has a first support section, four (first-fourth) cantilever sections supported by the first support section, and a second support section that supports the first support section and equipped with the fixed end; the first support section has two center lines that are orthogonal to each other; the first cantilever section and the second cantilever section are symmetrical to each other through one of the center lines of the first support section in a plan view; the third cantilever section and the fourth cantilever section are symmetrical to each other through the one of the center lines of the first support section in a plan view; the first cantilever section and the fourth cantilever section are symmetrical to each other through the other of the center lines of the first support section in a plan view; the second cantilever section and the third cantilever section are symmetrical to each other through the other of the center lines of the first support section in a plan view; the driving section includes a lower electrode for driving section, a piezoelectric layer for driving section formed above the lower electrode for driving section, and an upper electrode for driving section formed above the piezoelectric layer for driving section; and the detection section is formed above the vibration section for detecting an angular rate of rotation applied to the vibration section, and has a lower electrode for detection section, a piezoelectric layer for detection section formed above the lower electrode for detection section, and an upper electrode for detection section formed above the piezoelectric layer for detection section.

公开(公告)号：US20100194248A1

公开(公告)日：2010-08-05

申请号：US12759060

申请日：2010-04-13

申请人： Takamitsu HIGUCHI ,  Juri KATO ,  Yasuhiro ONO

发明人： Takamitsu HIGUCHI ,  Juri KATO ,  Yasuhiro ONO

IPC分类号： H01L41/04

CPC分类号： H03H3/02 ,  H03H9/0519 ,  H03H9/0542 ,  H03H9/0547 ,  H03H9/21 ,  H03H2003/026

摘要： A piezoelectric oscillator includes a substrate, a supporting section formed above the substrate, an oscillation section having one end affixed to the supporting section and another free end, and a driving section that is formed above the oscillation section and generates flexing vibration in the oscillation section. The driving section includes a first electrode, a piezoelectric layer formed above the first electrode, and a second electrode formed above the piezoelectric layer, and the oscillation section is composed of a material that is different from a material of the supporting section. The oscillation section is composed of single crystal silicon, and the supporting section is composed of polycrystal silicon or amorphous silicon.

摘要翻译： 一种压电振荡器，包括基板，形成在基板上方的支撑部分，具有固定在支撑部分上的一端的振动部分和另一个自由端，以及形成在振荡部分上方并在振荡部分中产生挠曲振动的驱动部分 。 驱动部包括：第一电极，形成在第一电极上方的压电层，以及形成在压电层上方的第二电极，振荡部由不同于支撑部的材料的材料构成。 振荡部由单晶硅构成，支撑部由多晶硅或非晶硅构成。

公开(公告)号：US20080229826A1

公开(公告)日：2008-09-25

申请号：US12053011

申请日：2008-03-21

申请人： Takamitsu HIGUCHI ,  Yasuhiro ONO

发明人： Takamitsu HIGUCHI ,  Yasuhiro ONO

IPC分类号： G01P15/09

CPC分类号： G01P15/097 ,  G01P15/0802

摘要： An acceleration sensor includes: a piezoelectric vibration device; an oscillation circuit; and a detection circuit, wherein the piezoelectric vibration device includes a substrate, an insulation layer formed above the substrate, a vibration section forming layer formed above the insulation layer, a vibration section formed in a cantilever shape in a first opening section that penetrates the vibration section forming layer and having a base section affixed to the vibration section forming layer and two beam sections extending from the base section, a second opening section that penetrates the insulation layer and formed below the first opening section and the vibration section, and a piezoelectric element section formed on each of the beam sections; the oscillation circuit vibrates the piezoelectric vibration device at a resonance frequency; and the detection circuit detects a change in the frequency of vibrations of the piezoelectric vibration device which is caused by an acceleration applied in a direction in which the beam sections extend, and outputs a signal corresponding to the acceleration based on the change in the frequency.

摘要翻译： 加速度传感器包括：压电振动装置; 振荡电路; 以及检测电路，其中所述压电振动装置包括基板，形成在所述基板上的绝缘层，形成在所述绝缘层上方的振动部分形成层，在穿过所述振动的第一开口部中以悬臂形状形成的振动部分 截面形成层，并且具有固定在振动部分形成层上的基部和从基部延伸的两个梁部，穿过绝缘层并形成在第一开口部和振动部下方的第二开口部，以及压电元件 每个梁段上形成的截面; 振荡电路以共振频率振动压电振动装置; 并且检测电路检测由沿光束部分延伸的方向施加的加速度引起的压电振动装置的振动频率的变化，并且基于频率的变化输出与加速度相对应的信号。

公开(公告)号：US20090058231A1

公开(公告)日：2009-03-05

申请号：US12192161

申请日：2008-08-15

申请人： Akihito MATSUMOTO ,  Takamitsu HIGUCHI ,  Yasuhiro ONO

发明人： Akihito MATSUMOTO ,  Takamitsu HIGUCHI ,  Yasuhiro ONO

IPC分类号： H01L41/047 ,  H01L41/22

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/047 ,  H01L41/0973 ,  H01L41/314 ,  H01L41/332 ,  Y10T29/42 ,  Y10T29/49126

摘要： A method for manufacturing a piezoelectric element includes the steps of: forming a first base substrate having an element to be transferred; forming a second base substrate; and transferring the element to be transferred from the first base substrate to the second base substrate. The step of forming the element to be transferred includes forming a first electrode above a first substrate, forming a piezoelectric layer above the first electrode, forming a second electrode above the piezoelectric layer, crystallizing the piezoelectric layer, forming a dielectric layer at least above the second electrode, and etching the dielectric layer such that at least a portion of the second electrode is exposed and the dielectric layer has a protrusion upwardly protruding with respect to the second electrode. The step of forming the second base substrate includes forming a third electrode above a second substrate, and the step of transferring includes bonding the element to be transferred and the second base substrate such that the second substrate is in contact with the protrusion and the second electrode is in contact with the third electrode.

摘要翻译： 一种制造压电元件的方法包括以下步骤：形成具有待转印元件的第一基底基板; 形成第二基底; 以及将要转移的元件从第一基底衬底转移到第二基底衬底。 形成待转移元件的步骤包括在第一基板上形成第一电极，在第一电极上形成压电层，在压电层上方形成第二电极，使压电层结晶，形成介电层至少在 并且蚀刻所述电介质层，使得所述第二电极的至少一部分被暴露并且所述电介质层具有相对于所述第二电极向上突出的突起。 形成第二基板的步骤包括在第二基板上形成第三电极，并且转印步骤包括将待转印元件和第二基底基板接合，使得第二基板与突起和第二电极接触 与第三电极接触。

公开(公告)号：US20080236283A1

公开(公告)日：2008-10-02

申请号：US12056349

申请日：2008-03-27

申请人： Takamitsu HIGUCHI ,  Yasuhiro ONO

发明人： Takamitsu HIGUCHI ,  Yasuhiro ONO

IPC分类号： G01P15/09

CPC分类号： G01P15/097 ,  G01P15/09

摘要： An acceleration sensor includes: a piezoelectric vibration device; an oscillation circuit; and a detection circuit, wherein the piezoelectric vibration device includes a substrate, an insulation layer formed above the substrate, a vibration section forming layer formed above the insulation layer, a vibration section formed in a cantilever shape in a first opening section that penetrates the vibration section forming layer, a second opening section that penetrates the insulation layer and formed below the first opening section and the vibration section, and a piezoelectric element section formed on the vibration section, the oscillation circuit vibrates the piezoelectric vibration device at a resonance frequency, and the detection circuit detects a change in the frequency of vibration of the piezoelectric vibration device which is caused by an acceleration applied in a direction in which the vibration section extends, and outputs a signal corresponding to the acceleration based on the change in the frequency.

摘要翻译： 加速度传感器包括：压电振动装置; 振荡电路; 以及检测电路，其中所述压电振动装置包括基板，形成在所述基板上的绝缘层，形成在所述绝缘层上方的振动部分形成层，在穿过所述振动的第一开口部中以悬臂形状形成的振动部分 截面形成层，穿过绝缘层并形成在第一开口部分和振动部分下方的第二开口部分和形成在振动部分上的压电元件部分，振荡电路以共振频率振动压电振动器件，并且 检测电路检测由振动部分延伸的方向施加的加速度引起的压电振动装置的振动频率的变化，并且基于频率的变化输出与加速度相对应的信号。

公开(公告)号：US20070227333A1

公开(公告)日：2007-10-04

申请号：US11692365

申请日：2007-03-28

申请人： Takamitsu HIGUCHI ,  Makoto EGUCHI

发明人： Takamitsu HIGUCHI ,  Makoto EGUCHI

IPC分类号： G10D1/04

CPC分类号： H03H9/21 ,  H03H2003/026

摘要： A tuning folk vibration device includes: a SOI substrate having a substrate, an oxide layer formed above the substrate and a semiconductor layer formed above the oxide layer; a tuning folk type vibration section that is formed by processing the semiconductor layer and the oxide layer and composed of the semiconductor layer; and a driving section for generating flexural vibration of the vibration section, wherein the vibration section includes a support section and two beam sections formed in a cantilever shape with the support section as a base of the beam sections, and the driving section includes a pair of drivers formed on each of the two beam sections, each of the drivers including a first electrode layer, a piezoelectric layer formed above the first electrode layer and a second electrode layer formed above the piezoelectric layer.

摘要翻译： 调谐民用振动装置包括：具有衬底的SOI衬底，在衬底上形成的氧化物层和形成在氧化物层上方的半导体层; 通过处理半导体层和氧化物层并由半导体层构成的调谐民间型振动部分; 以及用于产生振动部分的弯曲振动的驱动部分，其中所述振动部分包括支撑部分和形成为悬臂形状的两个梁部分，其中所述支撑部分为所述梁部分的基部，并且所述驱动部分包括一对 驱动器形成在两个光束部分中的每一个上，每个驱动器包括第一电极层，形成在第一电极层上方的压电层和形成在压电层上方的第二电极层。

公开(公告)号：US20080308525A1

公开(公告)日：2008-12-18

申请号：US12183145

申请日：2008-07-31

申请人： Takamitsu HIGUCHI ,  Taku AOYAMA

发明人： Takamitsu HIGUCHI ,  Taku AOYAMA

IPC分类号： C23F1/00 ,  B05D5/12

CPC分类号： H01L41/319 ,  C30B23/025 ,  C30B29/30 ,  G02F1/3551 ,  H01L41/0815 ,  H01L41/1873 ,  H01L41/316 ,  Y10T29/42

摘要： A method for manufacturing a potassium niobate deposited body includes: forming a buffer layer above a substrate composed of an R-plane sapphire substrate; forming above the buffer layer a potassium niobate layer or a potassium niobate solid solution layer that epitaxially grows in a (100) orientation in a pseudo cubic system expression; and forming an electrode layer above the potassium niobate layer or the potassium niobate solid solution layer, wherein a (100) plane of the potassium niobate layer or the potassium niobate solid solution layer is formed to tilt with a [11-20] direction vector as a rotation axis with respect to an R-plane (1-102) of the R-plane sapphire substrate.

摘要翻译： 制造铌酸钾沉积体的方法包括：在由R平面蓝宝石衬底构成的衬底上形成缓冲层; 在所述缓冲层上形成以假立方体系表达式以（100）取向外延生长的铌酸钾层或铌酸钾固溶体层; 在铌酸钾层或铌酸钾固溶体层上方形成电极层，其中形成铌酸钾铌酸盐或铌酸钾固溶体层的（100）面以[11-20]方向矢量倾斜为 相对于R平面蓝宝石衬底的R平面（1-102）的旋转轴线。

公开(公告)号：US20080180186A1

公开(公告)日：2008-07-31

申请号：US12019244

申请日：2008-01-24

申请人： Takamitsu HIGUCHI ,  Juri KATO ,  Yasuhiro ONO

发明人： Takamitsu HIGUCHI ,  Juri KATO ,  Yasuhiro ONO

IPC分类号： H03B5/32 ,  H01L21/36

CPC分类号： H03H3/02 ,  H03H9/0519 ,  H03H9/0542 ,  H03H9/0547 ,  H03H9/21 ,  H03H2003/026

摘要： A method for manufacturing a piezoelectric oscillator includes the steps of: forming a first semiconductor layer above a substrate; forming a second semiconductor layer above the first semiconductor layer; forming a first opening section that exposes the substrate by removing the second semiconductor layer and the first semiconductor layer in an area for forming a support section; forming the support section in the first opening section; forming a driving section that generates flexing vibration in an oscillation section above the second semiconductor layer; patterning the second semiconductor layer to form the oscillation section having the supporting section as a base end and another end provided so as not to contact the supporting section, and a second opening section that exposes the first semiconductor layer; and removing the first semiconductor layer through a portion exposed at the second opening section by an etching method, thereby forming a cavity section at least below the oscillation section, wherein the step of forming the driving section includes the steps of forming a first electrode, forming a piezoelectric layer above the first electrode, and forming a second electrode above the piezoelectric layer.

摘要翻译： 制造压电振荡器的方法包括以下步骤：在衬底上形成第一半导体层; 在所述第一半导体层上形成第二半导体层; 形成通过在用于形成支撑部分的区域中去除所述第二半导体层和所述第一半导体层而暴露所述衬底的第一开口部分; 在所述第一开口部中形成所述支撑部; 形成在所述第二半导体层上方的振荡部中产生挠曲振动的驱动部; 图案化第二半导体层以形成具有支撑部分作为基端的振荡部分，而另一端设置成不与支撑部分接触;以及第二开口部分，其暴露第一半导体层; 以及通过蚀刻方法通过暴露在第二开口部分的部分去除第一半导体层，从而在振荡部分的至少下方形成空腔部分，其中形成驱动部分的步骤包括以下步骤：形成第一电极，形成 在所述第一电极上方的压电层，以及在所述压电层的上方形成第二电极。