公开(公告)号：US20090096320A1

公开(公告)日：2009-04-16

申请号：US12341259

申请日：2008-12-22

申请人： Mari YAOI ,  Tetsuya KIMURA ,  Michio KADOTA

发明人： Mari YAOI ,  Tetsuya KIMURA ,  Michio KADOTA

IPC分类号： H01L41/047

CPC分类号： H03H3/08 ,  H03H9/02559

摘要： A surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in the upper surface thereof, an IDT electrode formed by filling the grooves with a metal, and a SiO2 layer arranged to cover an upper surface of the LiNbO3 substrate and the IDT electrode and having a substantially flat surface. The surface acoustic wave device uses a response of a Rayleigh wave. The LiNbO3 substrate has Euler angles in the range of (0°±5°, 180° to 247°, 0°±5°).

摘要翻译： 表面声波装置包括：LiNbO 3基板，其上表面具有多个槽，通过用金属填充槽形成的IDT电极和覆盖LiNbO 3基板的上表面的IDT和IDT 电极并具有基本平坦的表面。 表面声波装置使用瑞利波的响应。 LiNbO3基板在（0°±5°，180°至247°，0°±5°）的范围内具有欧拉角。

公开(公告)号：US20100320866A1

公开(公告)日：2010-12-23

申请号：US12862843

申请日：2010-08-25

申请人： Michio KADOTA ,  Tetsuya KIMURA

发明人： Michio KADOTA ,  Tetsuya KIMURA

IPC分类号： H01L41/047 ,  H01L41/08

CPC分类号： H03H9/0222 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02661 ,  H03H9/02834

摘要： A boundary acoustic wave device includes a LiNbO3 substrate having a plurality of grooves provided in the upper surface thereof, electrode layers which are defined by a metal material filled in the grooves and which include IDT electrodes, and a dielectric layer, such as a SiO2 layer, provided over the upper surface of the piezoelectric substrate and the electrodes. The upper surface of the dielectric layer is flat or substantially flat. The thickness of the electrodes, θ of the Euler angles (0°, θ, −45° to +45°) of the LiNbO3 substrate, and the thickness of the dielectric layer are within any of the ranges shown in Table 1.

摘要翻译： 声界面波装置包括具有设置在其上表面的多个槽的LiNbO 3基板，由填充在槽中的金属材料限定并且包括IDT电极的电极层，以及介电层，例如SiO 2层 设置在压电基板的上表面和电极上。 电介质层的上表面是平坦的或基本平坦的。 电极的厚度， 的欧拉角（0°，...，-45°至+ 45°），介电层的厚度在表1所示的范围内。

公开(公告)号：US20100237741A1

公开(公告)日：2010-09-23

申请号：US12813589

申请日：2010-06-11

申请人： Tetsuya KIMURA ,  Michio KADOTA ,  Mari YAOI

发明人： Tetsuya KIMURA ,  Michio KADOTA ,  Mari YAOI

IPC分类号： H01L41/047

CPC分类号： H03H9/02559 ,  H03H9/14538

摘要： A surface acoustic wave device including an SiO film has improved frequency temperature characteristics, prevents an increase in insertion loss, obtains a reflection coefficient of an electrode that is sufficiently high, and achieves more preferable resonant characteristics and filter characteristics. The surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in an upper surface thereof, an IDT electrode primarily composed of Pt provided in the grooves, a SiO2 layer arranged so as to cover the upper surface of the LiNbO3 substrate and the IDT electrode, a surface of the SiO2 layer is planarized, a response of a Rayleigh wave is utilized, and Euler angles of the LiNbO3 substrate are in a range of (0°±5°, 208° to 228°, 0°±5°).

摘要翻译： 包括SiO膜的表面声波器件具有改善的频率温度特性，防止插入损耗增加，获得足够高的电极的反射系数，并且实现更优选的谐振特性和滤波器特性。 声表面波装置包括：LiNbO 3基板，其上表面具有多个槽，主要由设置在槽中的Pt构成的IDT电极，覆盖LiNbO 3基板的上表面的SiO 2层， IDT电极，SiO 2层的表面平坦化，利用瑞利波的响应，LiNbO 3基板的欧拉角在（0°±5°，208°〜228°，0°±5°）的范围内 °）。

公开(公告)号：US20110241481A1

公开(公告)日：2011-10-06

申请号：US13161029

申请日：2011-06-15

申请人： Tetsuya KIMURA ,  Michio KADOTA

发明人： Tetsuya KIMURA ,  Michio KADOTA

IPC分类号： H01L41/047

CPC分类号： H03H9/02559 ,  H03H9/14541

摘要： A surface acoustic wave device has a large electromechanical coupling coefficient, a low insertion loss, and high resistance to static electricity. In the surface acoustic wave device, a piezoelectric substance includes a plurality of grooves. Each electrode finger of an IDT electrode includes a first electrode layer disposed in the grooves and a second electrode layer disposed on the first electrode layer and located at a position higher than the upper opening of the grooves. In a surface acoustic wave device, the one-half power of the product of the cube of the average density (ρa) of the first electrode layer and the average stiffness (C44a) of the first electrode layer [(ρa3×C44a)1/2] is larger than the one-half power of the product of the cube of the average density (ρb) of the second electrode layer and the average stiffness (C44b) of the second electrode layer [(ρb3×C44b)1/2].

摘要翻译： 表面声波器件具有大的机电耦合系数，低插入损耗和高抗静电能力。 在声表面波装置中，压电体包括多个槽。 IDT电极的每个电极指包括设置在槽中的第一电极层和设置在第一电极层上并位于比槽的上开口高的位置的第二电极层。 在声表面波装置中，第一电极层的平均密度（μr）和立方体的乘积的二次幂与第一电极层的平均刚度（C44a）[（＆rgr; a3× C44a）1/2]大于第二电极层的平均密度（＆rgr; b）的立方体的乘积的半功率和第二电极层的平均刚度（C44b）[（＆rgr; b3×C44b）1/2]。

公开(公告)号：US20110133600A1

公开(公告)日：2011-06-09

申请号：US13021816

申请日：2011-02-07

申请人： Tetsuya KIMURA ,  Michio KADOTA

发明人： Tetsuya KIMURA ,  Michio KADOTA

IPC分类号： H01L41/047 ,  H01L41/08

CPC分类号： H03H9/02559 ,  H03H9/0222 ,  H03H9/02834 ,  H03H9/14541

摘要： An elastic wave device has a low temperature coefficient of frequency (TCF), a low insertion loss, a high electromechanical coupling coefficient (k2), and an increased pitch of the electrode fingers. The elastic wave device includes a piezoelectric component, IDT electrodes, and a dielectric layer arranged to cover the IDT electrodes. The dielectric layer has a temperature coefficient of frequency, the sign of the temperature coefficient of frequency being opposite to that of the temperature coefficient of frequency of the piezoelectric component, or the sign of the temperature coefficient of frequency being the same as that of the temperature coefficient of frequency of the piezoelectric component, and the absolute value of the TCF being smaller than that of the temperature coefficient of frequency of the piezoelectric component. Electrode fingers of the IDT electrodes each include a first electrode layer and a second electrode layer. Each first electrode layer is located in a corresponding one of a plurality of grooves. Each second electrode layer is located above the top of a corresponding one of the grooves. The one-half power of the product of the cube of the mean density (ρa) and the mean stiffness (C44a) of the first electrode layer, i.e., (ρ3×C44)1/2 of the first electrode layer is larger than (ρ3×C44)1/2 of the second electrode layer.

摘要翻译： 弹性波装置具有低温度系数（TCF），低插入损耗，高机电耦合系数（k2）和电极指的间距增加。 弹性波装置包括压电元件，IDT电极和布置成覆盖IDT电极的电介质层。 介电层具有频率的温度系数，频率的温度系数的符号与压电元件的频率的温度系数的温度系数相反，或频率的温度系数的符号与温度的温度系数相同 压电元件的频率系数，TCF的绝对值小于压电元件的频率的温度系数的绝对值。 IDT电极的电极指每个包括第一电极层和第二电极层。 每个第一电极层位于多个槽中相应的一个槽中。 每个第二电极层位于相应的一个凹槽的顶部上方。 第一电极层的平均密度立方体的平均刚度（C44a）和第一电极层的平均刚度（C44a）的一半的功率，即第一电极层的（＆rgr; 3×C44）1/2 大于第二电极层的（＆rgr; 3×C44）1/2。

公开(公告)号：US20100259128A1

公开(公告)日：2010-10-14

申请号：US12825517

申请日：2010-06-29

申请人： Michio KADOTA ,  Tetsuya KIMURA

发明人： Michio KADOTA ,  Tetsuya KIMURA

IPC分类号： H01L41/047

CPC分类号： H03H9/02559 ,  H03H9/14538

摘要： A surface acoustic wave device includes a LiNbO3 substrate and is constructed such that a reflection coefficient of an IDT is not only high but the electromechanical coupling coefficient K2 is also high, and the range of Euler angles of the LiNbO3 substrate which obtains a wide range of the electromechanical coupling coefficient K2 is increased. A plurality of grooves are provided in the upper surface of the LiNbO3 substrate, and an IDT including a plurality of electrode fingers is provided and defined by a metal material filled in the plurality of grooves, and the metal material is made of Ag, Ni, or Cr or an alloy primarily including at least one Ag, Ni, or Cr.

摘要翻译： 表面声波装置包括LiNbO 3基板，并且被构造为使得IDT的反射系数不仅高，而且机电耦合系数K2也高，并且获得宽范围的LiNbO 3基板的欧拉角范围 机电耦合系数K2增加。 在LiNbO 3基板的上表面设置有多个槽，并且由填充在多个槽中的金属材料形成并限定包括多个电极指的IDT，金属材料由Ag，Ni， 或Cr或主要包含至少一种Ag，Ni或Cr的合金。

公开(公告)号：US20100043191A1

公开(公告)日：2010-02-25

申请号：US12607246

申请日：2009-10-28

申请人： Michio KADOTA ,  Tetsuya KIMURA

发明人： Michio KADOTA ,  Tetsuya KIMURA

IPC分类号： H01L41/22

CPC分类号： H03H3/08 ,  H03H3/10 ,  H03H9/02818 ,  H03H9/1092 ,  Y10T29/42 ,  Y10T29/49156 ,  Y10T29/49165

摘要： A method for manufacturing a surface acoustic wave filter device includes a step of forming grooves in one principal surface of a piezoelectric substrate, a step of embedding a metallic film in the grooves to form IDT electrodes, a step of performing a process of removing a portion of the piezoelectric substrate from the one principal surface of the piezoelectric substrate, thereby forming a recessed portion including the bottom surface in which the IDT electrodes are embedded, and a step of bonding a cover member to the piezoelectric substrate.

摘要翻译： 一种声表面波滤波器装置的制造方法，其特征在于，在压电基板的一个主面上形成槽的工序，在所述槽内嵌入金属膜，形成IDT电极的工序， 的压电基板的一个主表面，从而形成包括嵌入有IDT电极的底面的凹部，以及将盖部件接合到压电基板的工序。

公开(公告)号：US20080258844A1

公开(公告)日：2008-10-23

申请号：US12167344

申请日：2008-07-03

申请人： Michio KADOTA ,  Tetsuya KIMURA

发明人： Michio KADOTA ,  Tetsuya KIMURA

IPC分类号： H03H9/64 ,  H01L41/22 ,  H01L41/047

CPC分类号： H03H3/08 ,  H03H3/10 ,  H03H9/02818 ,  H03H9/1092 ,  Y10T29/42 ,  Y10T29/49156 ,  Y10T29/49165

摘要： A method for manufacturing a surface acoustic wave filter device includes a step of forming grooves in one principal surface of a piezoelectric substrate, a step of embedding a metallic film in the grooves to form IDT electrodes, a step of performing a process of removing a portion of the piezoelectric substrate from the one principal surface of the piezoelectric substrate, thereby forming a recessed portion including the bottom surface in which the IDT electrodes are embedded, and a step of bonding a cover member to the piezoelectric substrate.

摘要翻译： 一种声表面波滤波器装置的制造方法，其特征在于，在压电基板的一个主面上形成槽的工序，在所述槽内嵌入金属膜，形成IDT电极的工序， 的压电基板的一个主表面，从而形成包括嵌入有IDT电极的底面的凹部，以及将盖部件接合到压电基板的工序。

公开(公告)号：US20070120439A1

公开(公告)日：2007-05-31

申请号：US11627537

申请日：2007-01-26

申请人： Michio KADOTA ,  Tetsuya KIMURA

发明人： Michio KADOTA ,  Tetsuya KIMURA

IPC分类号： H03H9/25

CPC分类号： H03H9/02559 ,  H03H3/10 ,  H03H9/02661 ,  H03H9/14541

摘要： In a surface acoustic wave device, a plurality of grooves are provided on a piezoelectric substrate, an electrode film defining an IDT electrode is formed by filling an electrode material in the grooves, an insulator layer, such as a SiO2 film, is arranged so as to cover the piezoelectric substrate and the electrode film formed in the grooves, and the surface of the insulator layer is flattened.

摘要翻译： 在表面声波装置中，在压电基板上设置多个槽，通过在槽内填充电极材料形成限定IDT电极的电极膜，例如SiO 2， SUB膜被布置成覆盖形成在凹槽中的压电基板和电极膜，并且绝缘体层的表面变平。

公开(公告)号：US20110199169A1

公开(公告)日：2011-08-18

申请号：US13096026

申请日：2011-04-28

申请人： Michio KADOTA

发明人： Michio KADOTA

IPC分类号： H03H9/25

CPC分类号： H03H9/02834 ,  H03H9/02653 ,  H03H9/25 ,  H03H9/6403 ,  H03H9/6483

摘要： A tunable filter includes a surface acoustic wave resonator, in which an IDT electrode is defined by an electrode material provided in a recess in an upper surface of a piezoelectric substrate made of LiNbO3 or LiTaO3, and a ZnO film is arranged to cover the upper surface of the piezoelectric substrate, and variable capacitors connected with the surface acoustic wave resonator.

摘要翻译： 可调滤波器包括表面声波谐振器，其中IDT电极由设置在由LiNbO 3或LiTaO 3制成的压电基板的上表面的凹部中的电极材料限定，并且ZnO膜被布置成覆盖上表面 的压电基板和与表面声波谐振器连接的可变电容器。