公开(公告)号：US20100188536A1

公开(公告)日：2010-07-29

申请号：US12670040

申请日：2008-07-09

申请人： Tsuyoshi Hasuka ,  Toshihiro Kuriyama ,  Hiroyuki Mori ,  Junji Manabe

发明人： Tsuyoshi Hasuka ,  Toshihiro Kuriyama ,  Hiroyuki Mori ,  Junji Manabe

IPC分类号： H04N5/335 ,  H01L27/148 ,  H01L31/101

CPC分类号： H04N5/3698 ,  H01L27/14806 ,  H04N5/3592

摘要： The semiconductor element according to an aspect of the present invention is a solid-state imaging element formed on a semiconductor substrate, having an overflow drain structure for draining excessive charges generated in photoelectric conversion elements, and reading out signal charges accumulated in the photoelectric conversion elements to a vertical transfer unit via a readout gate electrode. The solid-state imaging element includes: a first voltage generating circuit which applies, to the semiconductor substrate, substrate voltage defining the height of overflow barrier in the overflow drain structure; and a second voltage generating circuit which selectively generates first voltage and second voltage each including the height of pulse wave superimposed onto the substrate voltage, at a time when readout pulse to be applied to the readout gate electrode is generated.

摘要翻译： 根据本发明的一个方面的半导体元件是形成在半导体衬底上的固态成像元件，具有用于排放在光电转换元件中产生的过多电荷的溢出漏极结构，以及读出在光电转换元件中累积的信号电荷 通过读出栅电极到垂直传送单元。 固体摄像元件包括：第一电压产生电路，向半导体衬底施加限定溢流漏极结构中的溢流栅的高度的衬底电压; 以及第二电压产生电路，其在产生要施加到读出栅电极的读出脉冲时，选择性地产生包括叠加在衬底电压上的脉冲波的高度的第一电压和第二电压。

公开(公告)号：US07671386B2

公开(公告)日：2010-03-02

申请号：US11617173

申请日：2006-12-28

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： H01L27/148

CPC分类号： H01L27/14831 ,  H01L29/76816 ,  H01L2924/0002 ,  H01L2924/00

摘要： The solid-state imaging device of the present invention includes: a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light; an amplifier which is operable to convert the signal charges held in the floating diffusion capacity unit into a voltage; the first wire which connects the floating diffusion capacity unit to an input of the amplifier; and a second wire which is made of the same material as the first wire, formed in the same layer as the first wire, arranged around the first wire at least along long sides of the first wire, and electrically insulated from the first wire.

摘要翻译： 本发明的固态成像装置包括：浮置扩散能量单元，其形成在半导体衬底上，并且可操作以保持源自入射光的信号电荷; 放大器，其可操作以将保持在所述浮动扩散容量单元中的信号电荷转换成电压; 将浮动扩散容量单元连接到放大器的输入端的第一线; 以及与第一线材相同的材料制成的第二线材，其形成在与第一线材相同的层中，至少沿着第一线材的长边布置在第一线材周围，并与第一线材电绝缘。

公开(公告)号：US07473944B2

公开(公告)日：2009-01-06

申请号：US11333924

申请日：2006-01-18

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： H01L29/768

CPC分类号： H01L27/1463 ,  H01L27/14636 ,  H01L27/14812

摘要： A solid-state imaging device includes a semiconductor substrate including: a plurality of light-receptive portions that are arranged one-dimensionally or two-dimensionally; a vertical transfer portion that transfers signal electric charge read out from the light-receptive portions in a vertical direction; a horizontal transfer portion that transfers the signal electric charge transferred by the vertical transfer portion in a horizontal direction; a barrier region adjacent to the horizontal transfer portion, the barrier region letting only surplus electric charge of the horizontal transfer portion pass therethough; a drain region adjacent to the barrier region, into which the surplus electric charge passing through the barrier region is discharged; and an insulation film adjacent to the drain region. A portion of the drain region is located beneath the insulation film.

摘要翻译： 一种固态成像装置，包括：半导体基板，包括：一维或二维布置的多个光接收部分; 垂直传送部分，其沿垂直方向传送从光接收部分读出的信号电荷; 水平传送部，其在垂直方向上传送由垂直传送部传送的信号电荷; 与水平转印部分相邻的势垒区域，仅允许水平转印部分的剩余电荷的势垒区域通过; 与阻挡区域相邻的漏极区域，通过阻挡区域的剩余电荷被排出到该漏极区域; 以及与漏区相邻的绝缘膜。 漏极区域的一部分位于绝缘膜下方。

公开(公告)号：US20070170470A1

公开(公告)日：2007-07-26

申请号：US11617173

申请日：2006-12-28

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： H01L29/768

CPC分类号： H01L27/14831 ,  H01L29/76816 ,  H01L2924/0002 ,  H01L2924/00

摘要： The solid-state imaging device of the present invention includes: a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light; an amplifier which is operable to convert the signal charges held in the floating diffusion capacity unit into a voltage; the first wire which connects the floating diffusion capacity unit to an input of the amplifier; and a second wire which is made of the same material as the first wire, formed in the same layer as the first wire, arranged around the first wire at least along long sides of the first wire, and electrically insulated from the first wire.

摘要翻译： 本发明的固态成像装置包括：浮置扩散能量单元，其形成在半导体衬底上，并且可操作以保持源自入射光的信号电荷; 放大器，其可操作以将保持在所述浮动扩散容量单元中的信号电荷转换成电压; 将浮动扩散容量单元连接到放大器的输入端的第一线; 以及与第一线材相同的材料制成的第二线材，其形成在与第一线材相同的层中，至少沿着第一线材的长边布置在第一线材周围，并与第一线材电绝缘。

公开(公告)号：US06751054B2

公开(公告)日：2004-06-15

申请号：US09903223

申请日：2001-07-11

申请人： Kiyoshi Sato ,  Toshinori Watanabe ,  Toshihiro Kuriyama

发明人： Kiyoshi Sato ,  Toshinori Watanabe ,  Toshihiro Kuriyama

IPC分类号： G11B5147

CPC分类号： G11B5/1278 ,  G11B5/313

摘要： A thin-film magnetic head for perpendicular magnetic recording comprising an auxiliary magnetic pole layer; a main magnetic pole layer; a conductive coil layer in a spiral shape which is disposed between the main magnetic pole layer and the auxiliary magnetic pole layer and which cross the magnetic circuit; and insulating layers electrically insulating the auxiliary magnetic pole layer and the main magnetic pole layer from the conductive coil layer. The insulating layers have flat surfaces formed at the sides further from the auxiliary magnetic pole layer, the front end portion of the main magnetic pole layer is provided on one of the flat surfaces, and the conductive coil layer is disposed under the main magnetic pole layer so that a part of the conductive coil layer opposes the front end portion of the main magnetic pole layer.

摘要翻译： 一种用于垂直磁记录的薄膜磁头，包括辅助磁极层; 主磁极层; 螺旋形状的导电线圈层，其设置在主磁极层和辅助磁极层之间并与磁路交叉; 以及将辅助磁极层和主磁极层与导电线圈层电绝缘的绝缘层。 绝缘层具有形成在辅助磁极层外侧的平面，主磁极层的前端部设置在一个平面上，导电线圈层配置在主磁极层的下方 使得导电线圈层的一部分与主磁极层的前端部相对。

公开(公告)号：US06498103B2

公开(公告)日：2002-12-24

申请号：US09903411

申请日：2001-07-11

申请人： Rieko Nishio ,  Takumi Yamaguchi ,  Toshihiro Kuriyama ,  Hiroyuki Senda

发明人： Rieko Nishio ,  Takumi Yamaguchi ,  Toshihiro Kuriyama ,  Hiroyuki Senda

IPC分类号： H01L21311

CPC分类号： H01L27/14692

摘要： A method for manufacturing a solid-state imaging device includes forming a transfer channel portion and a light-receiving portion in a silicon substrate; forming a silicon oxide film on the silicon substrate; forming a silicon nitride film on the silicon oxide film, the silicon nitride film acting as a gate insulating film together with the silicon oxide film above the transfer channel portion and acting as an anti-reflection film above the light-receiving portion; forming a protection film on the silicon nitride film; forming a polysilicon film above the silicon nitride film via the protection film at least above the light-receiving portion; and etching the polysilicon film so as to form a transfer electrode above the transfer channel portion. The etching of the polysilicon film is carried out so that the polysilicon film is removed above the light-receiving portion while the protection portion remains.

公开(公告)号：US06351003B1

公开(公告)日：2002-02-26

申请号：US09290122

申请日：1999-04-12

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： H01L31103

CPC分类号： H01L27/14689 ,  H01L27/14609

摘要： A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate of a first conductivity type; a photo-receiving portion of a second conductivity type formed in the semiconductor substrate; a detecting portion of the second conductivity type formed in the semiconductor substrate; an insulating film formed on the semiconductor substrate; a transfer gate electrode formed on the insulating film at lest between the photo-receiving portion and the detecting portion; and a read-out circuit, which is electrically connected to the detecting portion. A diffusion region of the same conductivity type as the detecting portion is formed in a region of the semiconductor substrate that is adjacent to an end of the detecting portion near the gate electrode and separate from the photo-receiving portion. An impurity concentration in the photo-receiving portion and an impurity concentration in the diffusion region are lower than an impurity concentration in the detecting portion. With this solid-state imaging device and with the method for producing the same, a solid-state imaging device is provided that reduces crystal defects in the photo-receiving portion and improves the output image quality.

公开(公告)号：US06350487B1

公开(公告)日：2002-02-26

申请号：US09515971

申请日：2000-02-29

申请人： Naoya Hasegawa ,  Toshihiro Kuriyama

发明人： Naoya Hasegawa ,  Toshihiro Kuriyama

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302

摘要： A spin-valve type thin film element includes an antiferromagnetic layer, a pinned magnetic layer, a free magnetic layer, a non-magnetic electrically conductive layer, a bias layer, and an electrically conductive layer. The magnetization direction of the pinned magnetic layer in the end regions in relation to the track width is fixed in the direction of the leakage magnetic field from a recording medium, and the magnetization direction of the pinned magnetic layer in the central region is fixed in the direction inclined in relation to the direction of the leakage magnetic field from the recording medium. A method for manufacturing a spin-valve type thin film element includes the steps of forming a multi-layered film, magnetic annealing at a temperature T1, patterning the multi-layered film into a predetermined shape, forming a bias layer on both sides of the multi-layered film, magnetizing the bias layer, annealing without applying a magnetic field at a temperature T2, and magnetizing the bias layer.

摘要翻译： 自旋阀型薄膜元件包括反铁磁层，钉扎磁性层，自由磁性层，非磁性导电层，偏置层和导电层。 端部区域中的钉扎磁性层相对于轨道宽度的磁化方向在来自记录介质的泄漏磁场的方向上固定，并且中心区域中的被钉扎磁性层的磁化方向固定在 相对于来自记录介质的泄漏磁场的方向倾斜的方向。 一种自旋阀型薄膜元件的制造方法包括以下步骤：在温度T1下形成多层膜，进行磁性退火，将多层膜图案化成预定的形状，在 多层膜，对偏置层进行磁化，在温度T2下不施加磁场进行退火，以及使偏置层磁化。

公开(公告)号：US6150045A

公开(公告)日：2000-11-21

申请号：US153923

申请日：1998-09-16

申请人： Masamichi Saito ,  Toshihiro Kuriyama

发明人： Masamichi Saito ,  Toshihiro Kuriyama

IPC分类号： G11B5/39 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  H01L43/08 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/08 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/1121

摘要： The pinned magnetic layer 2 is composed of a track width region 2' and a dead region 2", the track width region 2' being formed at a spaced apart relation to the bias region 5. Accordingly, magnetization of the track width region 2' is not so strongly affected by the bias region 5, thereby magnetization is fixed along the Y-direction at almost entire region of the track width region 2'. Therefore, the track width region 2' and the free magnetic region are in a crossing relation with each other giving a proper asymmetry in the entire region of the track width region 2'.

摘要翻译： 钉扎磁性层2由轨道宽度区域2'和死区域2“组成，轨道宽度区域2'以与偏置区域5隔开的关系形成。因此，轨道宽度区域2 '不受偏置区域5的强烈影响，从而在轨道宽度区域2'的几乎整个区域沿着Y方向固定磁化。 因此，轨道宽度区域2'和自由磁性区域彼此交叉关系，在轨道宽度区域2'的整个区域中给出适当的不对称性。

公开(公告)号：US5992004A

公开(公告)日：1999-11-30

申请号：US833405

申请日：1997-04-04

申请人： Kiyoshi Sato ,  Yoshihiko Kakihara ,  Masamichi Saito ,  Toshihiro Kuriyama ,  Toshinori Watanabe

发明人： Kiyoshi Sato ,  Yoshihiko Kakihara ,  Masamichi Saito ,  Toshihiro Kuriyama ,  Toshinori Watanabe

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.

摘要翻译： 在非磁性材料层上形成纵向偏置层和电极层。 通过蚀刻技术部分地去除纵向偏置层和电极层，使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。 此外，由底部到顶部构成磁阻效应层，非磁性层和横向偏置层的三层膜，或者由自由磁性层，非磁性层 在上述结构上形成固定磁性层和偏置层。 然后通过蚀刻技术部分去除三层膜或自旋阀膜，使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。 三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。 所得到的三层膜或自旋阀膜具有优异的磁检测特性。 此外，纵向偏置层与磁阻效应层具有良好的磁耦合。