公开(公告)号：US06350487B1

公开(公告)日：2002-02-26

申请号：US09515971

申请日：2000-02-29

申请人： Naoya Hasegawa ,  Toshihiro Kuriyama

发明人： Naoya Hasegawa ,  Toshihiro Kuriyama

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302

摘要： A spin-valve type thin film element includes an antiferromagnetic layer, a pinned magnetic layer, a free magnetic layer, a non-magnetic electrically conductive layer, a bias layer, and an electrically conductive layer. The magnetization direction of the pinned magnetic layer in the end regions in relation to the track width is fixed in the direction of the leakage magnetic field from a recording medium, and the magnetization direction of the pinned magnetic layer in the central region is fixed in the direction inclined in relation to the direction of the leakage magnetic field from the recording medium. A method for manufacturing a spin-valve type thin film element includes the steps of forming a multi-layered film, magnetic annealing at a temperature T1, patterning the multi-layered film into a predetermined shape, forming a bias layer on both sides of the multi-layered film, magnetizing the bias layer, annealing without applying a magnetic field at a temperature T2, and magnetizing the bias layer.

摘要翻译： 自旋阀型薄膜元件包括反铁磁层，钉扎磁性层，自由磁性层，非磁性导电层，偏置层和导电层。 端部区域中的钉扎磁性层相对于轨道宽度的磁化方向在来自记录介质的泄漏磁场的方向上固定，并且中心区域中的被钉扎磁性层的磁化方向固定在 相对于来自记录介质的泄漏磁场的方向倾斜的方向。 一种自旋阀型薄膜元件的制造方法包括以下步骤：在温度T1下形成多层膜，进行磁性退火，将多层膜图案化成预定的形状，在 多层膜，对偏置层进行磁化，在温度T2下不施加磁场进行退火，以及使偏置层磁化。

公开(公告)号：US06178071B1

公开(公告)日：2001-01-23

申请号：US09158447

申请日：1998-09-22

申请人： Naoya Hasegawa ,  Toshihiro Kuriyama

发明人： Naoya Hasegawa ,  Toshihiro Kuriyama

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302

摘要： A spin-valve type thin film element includes an antiferromagnetic layer, a pinned magnetic layer, a free magnetic layer, a non-magnetic electrically conductive layer, a bias layer, and an electrically conductive layer. The magnetization direction of the pinned magnetic layer in the end regions in relation to the track width is fixed in the direction of the leakage magnetic field from a recording medium, and the magnetization direction of the pinned magnetic layer in the central region is fixed in the direction inclined in relation to the direction of the leakage magnetic field from the recording medium. A method for manufacturing a spin-valve type thin film element includes the steps of forming a multi-layered film, magnetic annealing at a temperature T1, patterning the multi-layered film into a predetermined shape, forming a bias layer on both sides of the multi-layered film, magnetizing the bias layer, annealing without applying a magnetic field at a temperature T2, and magnetizing the bias layer.

摘要翻译： 自旋阀型薄膜元件包括反铁磁层，钉扎磁性层，自由磁性层，非磁性导电层，偏置层和导电层。 端部区域中的钉扎磁性层相对于轨道宽度的磁化方向在来自记录介质的泄漏磁场的方向上固定，并且中心区域中的被钉扎磁性层的磁化方向固定在 相对于来自记录介质的泄漏磁场的方向倾斜的方向。 一种自旋阀型薄膜元件的制造方法包括以下步骤：在温度T1下形成多层膜，进行磁性退火，将多层膜图案化成预定的形状，在 多层膜，对偏置层进行磁化，在温度T2下不施加磁场进行退火，以及使偏置层磁化。

公开(公告)号：US06764778B2

公开(公告)日：2004-07-20

申请号：US09997910

申请日：2001-10-31

申请人： Masamichi Saito ,  Naoya Hasegawa ,  Toshihiro Kuriyama ,  Eiji Umetsu ,  Kenichi Tanaka ,  Yosuke Ide

发明人： Masamichi Saito ,  Naoya Hasegawa ,  Toshihiro Kuriyama ,  Eiji Umetsu ,  Kenichi Tanaka ,  Yosuke Ide

IPC分类号： G11B527

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/325 ,  Y10T428/1121 ,  Y10T428/1171

摘要： A longitudinal bias layer is laminated above a free magnetic layer with a nonmagnetic layer provided therebetween so that the magnetization direction of the free magnetic layer is oriented by RKKY interaction with the longitudinal bias layer. The RKKY interaction exerts only between the longitudinal bias layer and the regions of the free magnetic layer which are located directly below both ends D of the longitudinal bias layer. Therefore, a thin film magnetic element can be provided, in which the width dimension of a recess formed in the longitudinal bias layer coincides with the magnetic track width.

摘要翻译： 纵向偏置层层叠在自由磁性层之上，其间设有非磁性层，使得自由磁性层的磁化方向取向为与纵向偏置层的RKKY相互作用。 RKKY相互作用仅在纵向偏置层和位于纵向偏置层的两端D正下方的自由磁性层的区域之间发生。 因此，可以提供薄膜磁性元件，其中形成在纵向偏置层中的凹部的宽度尺寸与磁道宽度一致。

公开(公告)号：US08009391B2

公开(公告)日：2011-08-30

申请号：US12120887

申请日：2008-05-15

申请人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.

摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

公开(公告)号：US07969690B2

公开(公告)日：2011-06-28

申请号：US12042585

申请日：2008-03-05

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3929 ,  H01L43/08

摘要： In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.

摘要翻译： 在隧道磁阻元件中，绝缘阻挡层由Mg-O制成，并且第一被钉扎磁性层具有其中由Ta制成的非磁性金属子层介于下铁磁层和上铁磁层之间的层叠结构。 非磁性金属子层的平均厚度为约1埃以上且约5以下。

公开(公告)号：US07907370B2

公开(公告)日：2011-03-15

申请号：US11851570

申请日：2007-09-07

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone ,  Ryo Nakabayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone ,  Ryo Nakabayashi ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3163 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also disclosed. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.

摘要翻译： 公开了一种隧道式磁感应元件，其包括能够保持自由磁性层的有利的软磁性能并且与已知的隧道磁传感元件相比可以具有高电阻变化率（＆Dgr; R / R）的Mg-O绝缘屏障， 并且还公开了制造这种隧道磁传感元件的方法。 在Mg-O绝缘屏障上设置由Fe组成比X为约30〜100原子％的Co100-XFeX构成的增强层（第二磁性层）。 由此，可以减小自由磁层的磁致伸缩λ，并且可以增加电阻变化率（＆Dgr; R / R）。

公开(公告)号：US07724481B2

公开(公告)日：2010-05-25

申请号：US11504147

申请日：2006-08-15

申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Kazumasa Nishimura ,  Naoya Hasegawa

发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Kazumasa Nishimura ,  Naoya Hasegawa

IPC分类号： G11B5/39 ,  H01L43/08 ,  G01R33/09

CPC分类号： G01R33/093 ,  B82Y25/00 ,  Y10T428/1121 ,  Y10T428/115

摘要： A magnetic sensing element is provided. A free magnetic layer has a three-layer structure including CoMnα sublayers each composed of a metal compound represented by the formula: Co2xMnxαy. The α contains an element β and Sb, the element β being at least one element selected from Ge, Ga, In, Si, Pb, Zn, Sn, and Al. The concentration x and the concentration y are each represented in terms of atomic percent and satisfy the equation: 3x+y=100 atomic percent. One of the CoMnα sublayers is in contact with a lower nonmagnetic material layer. The other CoMnα sublayer is in contact with upper nonmagnetic material layer. As a result, it is possible to achieve a high ΔRA and a lower interlayer coupling magnetic field Hin compared with the known art.

摘要翻译： 提供了一种磁传感元件。 自由磁性层具有包含CoMnα亚层的三层结构，各层由以下通式表示的金属化合物构成：Co2xMnxαy。 α包含元素＆bgr; 和Sb，元素＆bgr; 是选自Ge，Ga，In，Si，Pb，Zn，Sn和Al中的至少一种元素。 浓度x和浓度y均以原子百分比表示，满足下式：3x + y = 100原子％。 CoMnα子层中的一个与较低的非磁性材料层接触。 另一个CoMnα子层与上部非磁性材料层接触。 结果，与已知技术相比，可以实现高的＆Dgr。RA和较低的层间耦合磁场Hin。

公开(公告)号：US07643254B2

公开(公告)日：2010-01-05

申请号：US11671819

申请日：2007-02-06

申请人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Kazumasa Nishimura ,  Hidekazu Kobayashi

发明人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Kazumasa Nishimura ,  Hidekazu Kobayashi

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/3295

摘要： A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 Å. Accordingly, a high resistance change rate (ΔR/R) can be obtained.

摘要翻译： 隧道效应型磁传感器的自由磁性层形成在由Mg-O制成的绝缘阻挡层上，自由磁性层包括增强层，第一软磁层，非磁性金属层和 第二软磁层，从底部依次层叠。 例如，增强层由Co-Fe形成，第一和第二软磁性层由Ni-Fe形成，非磁性金属层由Ta形成。 第一软磁性层的平均厚度形成在5〜60的范围内。 因此，可以获得高电阻变化率（DeltaR / R）。

公开(公告)号：US07609489B2

公开(公告)日：2009-10-27

申请号：US11366002

申请日：2006-02-28

申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3929

摘要： A magnetic sensor comprising: a multilayer film which has a pinned magnetic layer, the magnetization thereof being pinned in one direction, and a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic material layer provided therebetween, in which current is allowed to flow in a direction perpendicular to the surfaces of the layers forming the multilayer film, wherein the pinned magnetic layer has a NiaFeb alloy layer (where a and b each indicate atomic percent, and 0

摘要翻译： 一种磁传感器，包括：多层膜，其具有钉扎磁性层，其磁化被一个方向固定，并且在其上设置有非磁性材料层的固定磁性层上形成的自由磁性层，其中允许电流流动 在垂直于形成多层膜的层的表面的方向上，其中钉扎磁性层具有NiaFeb合金层（其中a和b各自表示原子百分比，并且满足0

公开(公告)号：US07499249B2

公开(公告)日：2009-03-03

申请号：US11409879

申请日：2006-04-24

申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： H01F41/302 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3929 ,  H01F10/1936 ,  H01F10/3263 ,  H01F10/3268 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/10 ,  Y10T29/49021

摘要： A magnetic detecting element capable of maintaining a large ΔRA and reducing magnetostriction by changing a material of a free magnetic layer, and a method of manufacturing the same is provided. A CoMnXZ alloy layer or CoMnXRh alloy layer is formed in a free magnetic layer where an element X is at least one or two elements of Ge, Ga, In, Si, Pb, and Zn, and an element X in the latter case is at least one or two elements of Ge, Ga, In, Si, Pb, Zn, Sn, Al, and Sb. By forming the CoMnXZ alloy layer or the CoMnXRh alloy layer in the free magnetic layer, the magnetostriction of the free magnetic layer can be reduced while maintaining the large ΔRA, compared with a case where only the CoMnX alloy is formed.

摘要翻译： 提供能够维持大的DeltaRA并通过改变自由磁性层的材料来减小磁致伸缩的磁性检测元件及其制造方法。 在自由磁性层中形成CoMnXZ合金层或CoMnXRh合金层，其中元素X是Ge，Ga，In，Si，Pb和Zn中的至少一种或两种元素，后一种情况下的元素X在 Ge，Ga，In，Si，Pb，Zn，Sn，Al和Sb中的至少一种或两种元素。 通过在自由磁性层中形成CoMnXZ合金层或CoMnXRh合金层，与仅形成CoMnX合金的情况相比，可以减小自由磁性层的磁致伸缩，同时保持较大的DeltaRA。