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公开(公告)号：US10290723B2
公开(公告)日：2019-05-14
申请号：US15981913
申请日：2018-05-17
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chun-Tsen Lu , Chien-Ming Lai , Lu-Sheng Chou , Ya-Huei Tsai , Ching-Hsiang Chiu , Yu-Tung Hsiao , Chen-Ming Huang , Kun-Ju Li , Yu-Ping Wang
Abstract: A semiconductor device includes a substrate and a gate structure on the substrate, in which the gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, the middle portion being a nitrogen rich portion, the top portion and the bottom portion being titanium rich portions, and the top portion, the middle portion, and the bottom portion are of same material composition.
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公开(公告)号：US20180269308A1
公开(公告)日：2018-09-20
申请号：US15981913
申请日：2018-05-17
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chun-Tsen Lu , Chien-Ming Lai , Lu-Sheng Chou , Ya-Huei Tsai , Ching-Hsiang Chiu , Yu-Tung Hsiao , Chen-Ming Huang , Kun-Ju Li , Yu-Ping Wang
CPC classification number: H01L29/66545 , B32B1/00 , B32B18/00 , C22C32/0068 , H01L21/28088 , H01L29/4238 , H01L29/4966 , H01L29/511
Abstract: A semiconductor device includes a substrate and a gate structure on the substrate, in which the gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, the middle portion being a nitrogen rich portion, the top portion and the bottom portion being titanium rich portions, and the top portion, the middle portion, and the bottom portion are of same material composition.
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公开(公告)号：US20170040435A1
公开(公告)日：2017-02-09
申请号：US14840041
申请日：2015-08-30
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chun-Tsen Lu , Chien-Ming Lai , Lu-Sheng Chou , Ya-Huei Tsai , Ching-Hsiang Chiu , Yu-Tung Hsiao , Chen-Ming Huang , Kun-Ju Li , Yu-Ping Wang
IPC: H01L29/66 , H01L29/49 , C22C32/00 , H01L29/423
CPC classification number: H01L29/66545 , B32B1/00 , B32B18/00 , C22C32/0068 , H01L21/28088 , H01L29/4238 , H01L29/4966 , H01L29/511
Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate and a gate structure on the substrate. The gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, in which the top portion being a nitrogen rich portion, and the middle portion and the bottom portion being titanium rich portions.
Abstract translation: 公开了一种半导体器件。 半导体器件包括衬底和衬底上的栅极结构。 栅极结构包括在衬底上的高k电介质层和高k电介质层上的底部阻挡金属（BBM）层。 优选地，BBM层包括顶部，中间部分和底部，其中顶部是富氮部分，中部和底部是富钛部分。
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4.发明授权公开(公告)号：US10008581B2
公开(公告)日：2018-06-26
申请号：US14840041
申请日：2015-08-30
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chun-Tsen Lu , Chien-Ming Lai , Lu-Sheng Chou , Ya-Huei Tsai , Ching-Hsiang Chiu , Yu-Tung Hsiao , Chen-Ming Huang , Kun-Ju Li , Yu-Ping Wang
IPC: H01L23/48 , H01L23/52 , H01L29/40 , H01L29/66 , H01L29/423 , H01L29/49 , C22C32/00 , H01L29/51 , H01L21/28 , B32B1/00
CPC classification number: H01L29/66545 , B32B1/00 , B32B18/00 , C22C32/0068 , H01L21/28088 , H01L29/4238 , H01L29/4966 , H01L29/511
Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate and a gate structure on the substrate. The gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, in which the top portion being a nitrogen rich portion, and the middle portion and the bottom portion being titanium rich portions.
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