公开(公告)号：US20140342473A1

公开(公告)日：2014-11-20

申请号：US13894031

申请日：2013-05-14

Applicant: United Microelectronics Corp.

Inventor： Sheng Zhang ,  Guang-You Yu ,  Ying-Jie Xu ,  Chaw Che

IPC: H01L21/66

CPC classification number: H01L21/324 ,  H01L21/28185 ,  H01L21/28202 ,  H01L22/14

Abstract: A method for detecting metal contamination from a film-forming process causing interface traps is described. The film-forming process is performed to form a dielectric film on a wafer. An annealing treatment is performed to reduce the interface traps between the wafer and the dielectric film. Thereafter, the bulk recombination lifetime (BRLT) of the wafer is measured to estimate the amount of the metal contamination.

Abstract translation: 描述了一种从成膜过程引起界面陷阱中检测金属污染的方法。 进行成膜处理以在晶片上形成电介质膜。 进行退火处理以减少晶片和电介质膜之间的界面陷阱。 此后，测量晶片的体积复合寿命（BRLT）以估计金属污染的量。

公开(公告)号：US20140196251A1

公开(公告)日：2014-07-17

申请号：US13740254

申请日：2013-01-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： YINGJIE XU ,  Chaw Che ,  Yu-Yang Chen ,  Liang-Yong Tan ,  HAI YUAN ,  XIANYU MENG

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  C23C16/4405

Abstract: A semiconductor fabricating apparatus includes a reaction chamber, a first gas pipeline, and a second gas pipeline. The first gas pipeline includes a first cleaning gas pipeline for providing a first cleansing gas to the reaction chamber in a cleansing process, and a second cleansing gas pipeline for providing a second cleansing gas to the reaction chamber in the cleansing process. The first cleansing gas pipeline and the second cleansing gas pipeline are connected in parallel. The second gas pipeline provides a reactive gas to the reaction chamber in a fabricating process. The first gas pipeline and the second gas pipeline are connected in parallel.

Abstract translation: 半导体制造装置包括反应室，第一气体管道和第二气体管道。 第一气体管道包括用于在清洁过程中向反应室提供第一清洁气体的第一清洁气体管道和用于在清洁过程中向反应室提供第二清洗气体的第二清洁气体管道。 第一清洁气体管道和第二清洁气体管道并联连接。 第二气体管道在制造过程中向反应室提供反应气体。 第一气体管道和第二气体管道并联连接。