公开(公告)号：US20180061972A1

公开(公告)日：2018-03-01

申请号：US15600795

申请日：2017-05-22

Applicant: University of Electronic Science and Technology of China

Inventor： Xiaorong LUO ,  Gaoqiang DENG ,  Kun ZHOU ,  Qing LIU ,  Linhua HUANG ,  Tao SUN ,  Bo ZHANG

IPC: H01L29/739 ,  H01L29/74 ,  H01L29/10 ,  H01L29/08 ,  H01L29/861

CPC classification number: H01L29/7397 ,  H01L29/0634 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/7416 ,  H01L29/8611

Abstract: The present invention relates to the technical field of the power semiconductor device relates to a reverse conducting insulated gate bipolar transistor (RC-IGBT). The RC-IGBT comprises a P-type region, an N-type emitter region, a P-type body contact region, a dielectric trench, a collector region, and an electrical filed cutting-off region. The beneficial effect of the present invention is that, when compared with traditional RC-IGBT, the IGBT of the present invention can eliminate negative resistance effect and effectively improve the performance of forward and reverse conduction.

公开(公告)号：US20180294335A1

公开(公告)日：2018-10-11

申请号：US15623371

申请日：2017-06-14

Applicant: University of Electronic Science and Technology of China

Inventor： Xiaorong LUO ,  Fu PENG ,  Chao YANG ,  Jie WEI ,  Siyu DENG ,  Dongfa OUYANG ,  Bo ZHANG

IPC: H01L29/15 ,  H01L29/06 ,  H01L29/207 ,  H01L29/423 ,  H01L29/78 ,  H01L29/20 ,  H01L29/10

CPC classification number: H01L29/158 ,  H01L29/0615 ,  H01L29/1054 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/4236 ,  H01L29/7788 ,  H01L29/7827

Abstract: The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.