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    Polarized radiation source using spin extraction/injection
    4.
    发明授权
    Polarized radiation source using spin extraction/injection 失效
    使用旋转萃取/注射的极化辐射源

    公开(公告)号：US07208775B2

    公开(公告)日：2007-04-24

    申请号：US11061060

    申请日：2005-02-18

    申请人： Viatcheslav V. Osipov ,  Alexandre M. Bratkovski

    发明人： Viatcheslav V. Osipov ,  Alexandre M. Bratkovski

    IPC分类号： H01L33/00

    CPC分类号： H01L33/02 ,  H01L33/0004 ,  H01S5/04 ,  H01S5/32

    摘要： Spin-polarized electrons can be efficiently extracted from an n-doped semiconductor layer (n-S) by forming a modified Schottky contact with a ferromagnetic material (FM) and a δ-doped layer at an interface under forward bias voltage conditions. Due to spin-selection property of the FM-S junction, spin-polarized carriers appear in the n-doped semiconductor layer near the FM-S interface. If a FM-n-n′-p heterostructure is formed, where the n′ region is a narrower gap semiconductor, polarized electrons from the n-S region and holes from the p-S region can diffuse into the n′-S region under the influence of independent voltages applied between the FM and n′ regions and the n′ and p regions. The polarized electrons and holes recombine in the n′-S region and produce polarized light. The polarization can be controlled and modulated by controlling the applied voltages.

    摘要翻译： 通过在正向偏压条件下在界面处形成与铁磁材料（FM）和δ掺杂层的改性肖特基接触，可以从n掺杂半导体层（n-S）有效地提取自旋极化电子。 由于FM-S结的自旋选择性质，自旋极化载流子出现在FM-S界面附近的n掺杂半导体层中。 如果形成FM-n-n'-p异质结构，其中n'区域是较窄的间隙半导体，则来自nS区域的极化电子和来自pS区域的空穴可以扩散到n'-S区域的影响下 在FM和n'区域以及n'和p区域之间施加独立电压。 极化的电子和空穴在n'-S区域复合并产生偏振光。 可以通过控制施加的电压来控制和调制极化。

    Magnetic sensor based on efficient spin injection into semiconductors
    5.
    发明授权
    Magnetic sensor based on efficient spin injection into semiconductors 失效
    基于有效自旋注入半导体的磁传感器

    公开(公告)号：US07094610B2

    公开(公告)日：2006-08-22

    申请号：US10879649

    申请日：2004-06-28

    申请人： Viatcheslav V. Osipov ,  Alexandre M. Bratkovski

    发明人： Viatcheslav V. Osipov ,  Alexandre M. Bratkovski

    IPC分类号： H01L29/76 ,  G11C11/34

    CPC分类号： G01R33/06 ,  Y10T428/32

    摘要： A magnetic sensor using efficient injection of spin polarized electrons at room temperature can be fabricated by forming a semiconductor layer sandwiched between ferromagnets and forming δ-doped layers between the semiconductor layer and the ferromagnets. A sensing method applies a magnetic field to be measured to the semiconductor layer and observes the conductivity of the sensor. The sensing techniques can achieve high magneto-sensitivity and very high operating speed, which in turn provides ultra fast and sensitive magnetic sensors.

    摘要翻译： 可以通过在半导体层和铁磁体之间形成夹在铁磁体之间并形成δ-掺杂层的半导体层来制造在室温下有效地注入自旋极化电子的磁传感器。 感测方法将要测量的磁场施加到半导体层并观察传感器的电导率。 感测技术可以实现高磁敏感和非常高的操作速度，从而提供超快速和灵敏的磁传感器。

    Amplifiers using spin injection and magnetic control of electron spins
    6.
    发明授权
    Amplifiers using spin injection and magnetic control of electron spins 有权
    使用自旋注入和电子自旋磁控制的放大器

    公开(公告)号：US06879013B2

    公开(公告)日：2005-04-12

    申请号：US10632038

    申请日：2003-07-30

    申请人： Viatcheslav V. Osipov ,  Alexandre M. Bratkovski

    发明人： Viatcheslav V. Osipov ,  Alexandre M. Bratkovski

    IPC分类号： H01L29/66 ,  H01L35/24 ,  G11C7/00 ,  H01L51/00

    CPC分类号： B82Y10/00 ,  G11C2213/18 ,  H01L29/66984

    摘要： Ultrafast solid state amplifiers of electrical current, including power amplification devices, use injection of spin-polarized electrons from a magnetic region into another magnetic region through a semiconductor control region and electron spin precession inside the control region induced by a magnetic field resulting from a current flowing through a conductive nanowire. The amplifiers may include magnet-semiconductor-magnet heterostructures and are able to operate on electric currents and electromagnetic waves having frequencies up to 100 GHz or more.

    摘要翻译： 包括功率放大装置的电流的超快固态放大器使用通过半导体控制区域将磁极区域的自旋极化电子注入另一个磁区域，并由电流产生的磁场引起的电子自旋进动 流过导电纳米线。 放大器可以包括磁体 - 半导体 - 磁体异质结构，并且能够对频率高达100GHz或更高的电流和电磁波进行操作。

    Spin injection control using electric current
    10.
    发明授权
    Spin injection control using electric current 有权
    使用电流进行自旋喷射控制

    公开(公告)号：US07521264B2

    公开(公告)日：2009-04-21

    申请号：US11649931

    申请日：2007-01-05

    申请人： Viatcheslav V. Osipov ,  Alexandre M. Bratkovski

    发明人： Viatcheslav V. Osipov ,  Alexandre M. Bratkovski

    IPC分类号： H01L21/00

    CPC分类号： G11C11/16 ,  H01L29/66984 ,  H01L43/08

    摘要： Devices such as transistors, amplifiers, frequency multipliers, and square-law detectors use injection of spin-polarized electrons from one magnetic region, into another through a control region and spin precession of injected electrons in a magnetic field induced by current in a nanowire. In one configuration, the nanowire is also one of the magnetic regions and the control region is a semiconductor region between the magnetic nanowire and the other magnetic region. Alternatively, the nanowire is insulated from the control region and the two separate magnetic regions. The relative magnetizations of the magnetic regions can be selected to achieve desired device properties. A first voltage applied between one magnetic region and the other magnetic nanowire or region causes injection of spin-polarized electrons through the control region, and a second voltage applied between the ends of the nanowire causes a current and a magnetic field that rotates electron spins to control device conductivity.

    摘要翻译： 诸如晶体管，放大器，倍频器和平方律检测器的器件使用从一个磁性区域将自旋极化电子注入另一个通过控制区域并且在由纳米线中的电流引起的磁场中的注入的电子的自旋进动。 在一种构造中，纳米线也是磁性区域之一，并且控制区域是磁性纳米线与另一个磁性区域之间的半导体区域。 或者，纳米线与控制区域和两个分离的磁性区域绝缘。 可以选择磁性区域的相对磁化以实现期望的器件特性。 施加在一个磁性区域和另一个磁性纳米线或区域之间的第一电压引起自旋极化电子注入到控制区域，并且施加在纳米线末端之间的第二电压引起电流和电流旋转的磁场 控制装置电导率。