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1.发明授权公开(公告)号：US07615491B2
公开(公告)日：2009-11-10
申请号：US11243876
申请日：2005-10-05
申请人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
发明人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
IPC分类号： H01L21/44
CPC分类号： C09D5/10 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
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2.发明申请公开(公告)号：US20070066058A1
公开(公告)日：2007-03-22
申请号：US11243624
申请日：2005-10-05
申请人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
发明人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
CPC分类号： C09D5/10 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
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公开(公告)号：US20060280860A1
公开(公告)日：2006-12-14
申请号：US11148724
申请日：2005-06-09
申请人： Vincent Paneccasio , Qingyun Chen , Charles Valverde , Nicolai Petrov , Christian Witt , Richard Hurtubise
发明人： Vincent Paneccasio , Qingyun Chen , Charles Valverde , Nicolai Petrov , Christian Witt , Richard Hurtubise
摘要： An electroless plating method and composition for depositing Co or Co alloys onto a metal-based substrate in manufacture of microelectronic devices, involving a source of Co ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and an oxime-based compound stabilizer.
摘要翻译： 一种用于在制造包含Co离子源的微电子器件的金属基底上沉积Co或Co合金的化学镀方法和组合物，用于减少沉积到衬底上的金属离子的还原剂和基于肟的 复合稳定剂。
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4.发明授权公开(公告)号：US07611988B2
公开(公告)日：2009-11-03
申请号：US11243631
申请日：2005-10-05
申请人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
发明人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
IPC分类号： H01L21/44
CPC分类号： C09D5/10 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
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5.发明授权公开(公告)号：US07410899B2
公开(公告)日：2008-08-12
申请号：US11230912
申请日：2005-09-20
申请人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
发明人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
IPC分类号： H01L21/3205
CPC分类号： C09D5/10 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
摘要翻译： 在制造微电子器件时，将Co，Ni或其合金无电沉积到衬底上的方法和组合物。 晶粒细化剂，整理剂，除氧剂和用于无电解Co和Ni沉积溶液的稳定剂。
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6.发明申请公开(公告)号：US20070062408A1
公开(公告)日：2007-03-22
申请号：US11243631
申请日：2005-10-05
申请人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
发明人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
IPC分类号： C23C18/40 , C23C18/36 , H01L21/44 , B22F7/00 , C09D5/00 , C09D5/10 , C23C16/00 , C23C18/00 , C23C20/00
CPC分类号： C09D5/10 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
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公开(公告)号：US07332193B2
公开(公告)日：2008-02-19
申请号：US11085304
申请日：2005-03-21
申请人： Charles Valverde , Nicolai Petrov , Eric Yakobson , Qingyun Chen , Vincent Paneccasio, Jr. , Richard Hurtubise , Christian Witt
发明人： Charles Valverde , Nicolai Petrov , Eric Yakobson , Qingyun Chen , Vincent Paneccasio, Jr. , Richard Hurtubise , Christian Witt
CPC分类号： H01L21/76849 , C23C18/34 , C23C18/36 , C23C18/50 , H01L21/288 , H05K3/244
摘要： An electroless plating method and composition for depositing Co, Ni, or alloys thereof onto a metal-based substrate in manufacture of microelectronic devices, involving a source of deposition ions selected from the group consisting of Co ions and Ni ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and a hydrazine-based leveling agent.
摘要翻译： 一种用于在制造微电子器件时将Co，Ni或其合金沉积在金属基底上的化学镀方法和组合物，其包括选自Co离子和Ni离子的沉积离子源，用于还原的还原剂 沉积到金属到基底上的离子，以及基于肼的流平剂。
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8.发明申请公开(公告)号：US20070066057A1
公开(公告)日：2007-03-22
申请号：US11230912
申请日：2005-09-20
申请人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
发明人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
IPC分类号： H01L21/44
CPC分类号： C09D5/10 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
摘要翻译： 在制造微电子器件时，将Co，Ni或其合金无电沉积到衬底上的方法和组合物。 晶粒细化剂，整理剂，除氧剂和用于无电解Co和Ni沉积溶液的稳定剂。
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9.发明授权公开(公告)号：US07611987B2
公开(公告)日：2009-11-03
申请号：US11243624
申请日：2005-10-05
申请人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
发明人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
IPC分类号： H01L21/44
CPC分类号： C09D5/10 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
摘要翻译： 在制造微电子器件时，将Co，Ni或其合金无电沉积到衬底上的方法和组合物。 晶粒细化剂，整理剂，除氧剂和用于无电解Co和Ni沉积溶液的稳定剂。
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公开(公告)号：US20060083850A1
公开(公告)日：2006-04-20
申请号：US11085304
申请日：2005-03-21
申请人： Charles Valverde , Nicolai Petrov , Eric Yakobson , Qingyun Chen , Vincent Paneccasio , Richard Hurtubise , Christian Witt
发明人： Charles Valverde , Nicolai Petrov , Eric Yakobson , Qingyun Chen , Vincent Paneccasio , Richard Hurtubise , Christian Witt
CPC分类号： H01L21/76849 , C23C18/34 , C23C18/36 , C23C18/50 , H01L21/288 , H05K3/244
摘要： An electroless plating method and composition for depositing Co, Ni, or alloys thereof onto a metal-based substrate in manufacture of microelectronic devices, involving a source of deposition ions selected from the group consisting of Co ions and Ni ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and a hydrazine-based leveling agent.
摘要翻译： 一种用于在制造微电子器件时将Co，Ni或其合金沉积在金属基底上的化学镀方法和组合物，其包括选自Co离子和Ni离子的沉积离子源，用于还原的还原剂 沉积到金属到基底上的离子，以及基于肼的流平剂。
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