摘要:
A process for making a self-aligned thin film transistor, said process comprising the steps of: (1) providing a gate which comprises a glass substrate, a transparent electrode on top thereof, and a metal electrode on top of said transparent electrode, (2) forming a stack by depositing over said gate a triple layer structure consisting of gate dielectric material, active material and a top passivating dielectric, (3) coating the top of said triple layer with a dual-tone photoresist, (4) exposing said photoresist from the top through a mask having transparent areas, opaque areas and areas transparent to selective wavelengths, using broad band UV light, (5) developing the photoresist by treatment with a solvent, (6) etching the stack with a liquid etchant through to the glass substrate, (7) exposing the photoresist from the bottom through the glass substrate using near UV light, (8) developing the photoresist with a solvent, and (9) etching off the top passivating layer of the stack.
摘要:
A structure to reduce the likelihood of flashover in a parallel plate electron beam array is disclosed. The structure may comprise a spacer structure between the parallel plates along the outer perimeter of the plates. The spacer structure may include a conductive member. The conductive member may shunt anode to cathode flashovers to a sink outside of the array before they reach the cathode. The conductive member may be provided by a conductive frit made of a metal/glass mixture, a metal foil, or a metal coating that extends through or next to the spacer structure.
摘要:
The present invention relates to OLED devices having anodes with improved stability and longer lifetime. In particular, the present invention relates to OLEDs comprising an anode having improved stability and longer lifetime wherein the anode comprises a semi-transparent single layer comprising molybdenum.
摘要:
An active matrix OLED display includes current driving TFT transistors to provide current to corresponding OLEDs. The control signals to each TFT gate include a data signal that is proportional to the desired luminance output for the OLED and a reverse data signal that is used to reverse bias the TFT to prevent threshold drift in the TFT. The data signal alteration is preformed either at a frame rate or at a line rate.
摘要:
A cathodoluminescent lamp in the form of a vacuum diode or triode uses a self-supporting YAG crystal as the light emitter. The crystal shape can be selected (spherical, slab, bar) for desired effect and light trapping is turned to advantage by selectively coating the crystal surface to provide for preferential light emission.
摘要:
A field emitter device including an insulator structure provided on an upper gate line layer of the device. The insulator structure may surround groups of emitters arranged on adjacent gate lines, groups of emitters arranged on the same gate lines, and/or entire regions of a larger array of field emitters. The insulator structure may reduce the occurrence of flashovers to and from the gate lines and emitters when the field emitter device is used in a display. The insulator structure may also enhance the focus of electrons emitted by the field emitter device on the display screen. Focus may be further enhanced by the addition of a resistive coating on the insulator structure. Methods of making the insulator structure and resistive coating are also disclosed.
摘要:
A method of displaying a high resolution multicolor image on a lower resolution display. The image comprises a plurality of image pixels containing at least first and second image subpixels having first and second colors. The image is displayed on a display having display pixels comprising at least first and second spatially offset display subpixels capable of displaying the first and second colors, respectively. In the method, the first display subpixel is displayed with an intensity which is a function of the intensities of at least two first image subpixels having positions extending over a first region having an area greater than the area of the first display subpixel. The first region is approximately centered on the position of the first display subpixel. A second display subpixel is displayed with an intensity which is a function of the intensities of at least two second image subpixels having positions extending over a second region having an area greater than the area of the second display subpixel. The second region is approximately centered on the position of the second display subpixel. By using a different centered region for each separate subpixel of a composite RGB display picture element in transforming a high resolution multicolor image to a lower resolution display, higher quality images are produced as compared to using a single region for each composite RGB display picture element.
摘要:
The elimination of crosstalk between data lines and pixel cells in a thin film transistor/liquid crystal display is accomplished by applying a data signal to a given data line for a time period less than the standard scan line period of the display, and applying a crosstalk compensation signal to the given data line for the remainder of the scan line period.
摘要:
The light emitting device comprises a plurality of stacked organic light emitting devices. The plurality of organic light emitting devices are arranged in a stack. The light emitting device further includes a controller for controlling operation of each of the plurality of organic light emitting devices in the stack. The controller supplies the same current to each of the organic light emitting devices in the stack. The controller simultaneously supplies the same current to each of the plurality of the organic light emitting devices.
摘要:
A sealing structure for an organic light emitting device display. The sealing structure comprises a metal film overlying a dielectric film. The sealing structure has low moisture and oxygen permeability. At least one of the metal layers may react with moisture or oxygen to seal off pin holes. A net low stress sealing structure may be formed by combining tensile and compressive films. The sealing structure may be etched to create openings for connection to outside circuitry. The innovative sealing structure minimizes moisture leakage and vertical shorts between diode cathode and anode.