公开(公告)号：US20220367184A1

公开(公告)日：2022-11-17

申请号：US17814565

申请日：2022-07-25

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee

IPC: H01L21/02 ,  H01L29/24 ,  C23C14/08 ,  C23C14/28

Abstract: Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

公开(公告)号：US11437234B2

公开(公告)日：2022-09-06

申请号：US16985455

申请日：2020-08-05

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee

IPC: H01L21/02 ,  H01L29/24 ,  C23C14/08 ,  C23C14/28 ,  H01L29/778

Abstract: Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

公开(公告)号：US10796907B2

公开(公告)日：2020-10-06

申请号：US16252783

申请日：2019-01-21

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee

IPC: H01L21/02 ,  H01L29/24 ,  C23C14/08 ,  C23C14/28 ,  H01L29/778

Abstract: Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

公开(公告)号：US20240229292A1

公开(公告)日：2024-07-11

申请号：US18151550

申请日：2023-01-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee ,  Jieun Kim

IPC: C30B23/02 ,  C30B29/24 ,  C30B29/30 ,  C30B29/32 ,  C30B29/68

CPC classification number: C30B23/02 ,  C30B29/24 ,  C30B29/30 ,  C30B29/32 ,  C30B29/68

Abstract: Apparatus and methods for growing films of complex layered metal oxides with high stoichiometries and high crystal qualities are provided. The layered complex metal oxides include two or more metals and oxygen and have a layered structure. The methods, which are referred to as hybrid pulsed laser deposition (hybrid PLD), synergistically combine the advantages of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) to grow complex metal oxide films that include metals with very different vapor pressures.

公开(公告)号：US11749527B2

公开(公告)日：2023-09-05

申请号：US17814565

申请日：2022-07-25

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee

IPC: H01L21/02 ,  C23C14/08 ,  H01L29/24 ,  C23C14/28 ,  H01L29/778

CPC classification number: H01L21/02565 ,  C23C14/088 ,  C23C14/28 ,  H01L21/02414 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/778

Abstract: Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

公开(公告)号：US12180610B2

公开(公告)日：2024-12-31

申请号：US18151550

申请日：2023-01-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee ,  Jieun Kim

IPC: C30B23/02 ,  C30B29/24 ,  C30B29/30 ,  C30B29/32 ,  C30B29/68

Abstract: Apparatus and methods for growing films of complex layered metal oxides with high stoichiometries and high crystal qualities are provided. The layered complex metal oxides include two or more metals and oxygen and have a layered structure. The methods, which are referred to as hybrid pulsed laser deposition (hybrid PLD), synergistically combine the advantages of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) to grow complex metal oxide films that include metals with very different vapor pressures.

公开(公告)号：US20200234953A1

公开(公告)日：2020-07-23

申请号：US16252783

申请日：2019-01-21

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee

IPC: H01L21/02 ,  H01L29/24 ,  C23C14/08 ,  C23C14/28

Abstract: Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.