公开(公告)号：US20150340330A1

公开(公告)日：2015-11-26

申请号：US14715445

申请日：2015-05-18

Applicant: XINTEC INC.

Inventor： Geng-Peng PAN ,  Yi-Ming CHANG ,  Chia-Sheng LIN

IPC: H01L23/00 ,  H01L21/033 ,  H01L21/302 ,  H01L23/48 ,  H01L21/268

CPC classification number: H01L24/03 ,  H01L21/0273 ,  H01L21/0334 ,  H01L21/268 ,  H01L21/302 ,  H01L21/48 ,  H01L21/481 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/03831 ,  H01L2224/05017 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05557 ,  H01L2224/0557 ,  H01L2924/00014

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first isolation layer is formed on a first surface of a wafer substrate. A conductive pad is formed on the first isolation layer. A hollow region through the first surface and a second surface of the wafer substrate is formed, such that the first isolation layer is exposed through the hollow region. A laser etching treatment is performed on the first isolation layer that is exposed through the hollow region, such that a first opening is formed in the first isolation layer, and a concave portion exposed through the first opening is formed in the conductive pad.

Abstract translation: 半导体结构的制造方法包括以下步骤。 在晶片衬底的第一表面上形成第一隔离层。 导电焊盘形成在第一隔离层上。 形成穿过第一表面的中空区域和晶片衬底的第二表面，使得第一隔离层通过中空区域露出。 对通过中空区域暴露的第一隔离层进行激光蚀刻处理，使得在第一隔离层中形成第一开口，并且在导电焊盘中形成通过第一开口暴露的凹部。

公开(公告)号：US20170213802A1

公开(公告)日：2017-07-27

申请号：US15481355

申请日：2017-04-06

Applicant: XINTEC INC.

Inventor： Geng-Peng PAN ,  Yi-Ming CHANG ,  Chia-Sheng LIN

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/48 ,  H01L21/768 ,  H01L21/027 ,  H01L21/268

CPC classification number: H01L24/03 ,  H01L21/0273 ,  H01L21/0334 ,  H01L21/268 ,  H01L21/302 ,  H01L21/48 ,  H01L21/481 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/03831 ,  H01L2224/05017 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05557 ,  H01L2224/0557 ,  H01L2924/00014

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first isolation layer is formed on a first surface of a wafer substrate. A conductive pad is formed on the first isolation layer. A hollow region through the first surface and a second surface of the wafer substrate is formed, such that the first isolation layer is exposed through the hollow region. A laser etching treatment is performed on the first isolation layer that is exposed through the hollow region, such that a first opening is formed in the first isolation layer, and a concave portion exposed through the first opening is formed in the conductive pad.