公开(公告)号：US20140199830A1

公开(公告)日：2014-07-17

申请号：US14214408

申请日：2014-03-14

Applicant: XINTEC INC.

Inventor： Yu-Lin YEN ,  Chien-Hui CHEN ,  Tsang-Yu LIU ,  Long-Sheng YEOU

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  B81B7/007 ,  B81B2207/07 ,  B81B2207/092 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/32 ,  H01L24/94 ,  H01L2221/68377 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/05552

Abstract: According to an embodiment of the invention, a chip package is provided. The chip package includes: a substrate having an upper surface and a lower surface; a plurality of conducting pads located under the lower surface of the substrate; a dielectric layer located between the conducting pads; a trench extending from the upper surface towards the lower surface of the substrate; a hole extending from a bottom of the trench towards the lower surface of the substrate, wherein a sidewall of the hole is substantially perpendicular to the lower surface of the substrate, and the sidewall or a bottom of the hole exposes a portion of the conducting pads; and a conducting layer located in the hole and electrically connected to at least one of the conducting pads.

Abstract translation: 根据本发明的实施例，提供了芯片封装。 芯片封装包括：具有上表面和下表面的基板; 位于所述基板的下表面下方的多个导电垫; 位于导电垫之间的电介质层; 从衬底的上表面延伸到下表面的沟槽; 从所述沟槽的底部延伸到所述衬底的下表面的孔，其中所述孔的侧壁基本上垂直于所述衬底的下表面，并且所述孔的侧壁或所述底部露出所述导电垫的一部分 ; 以及导电层，其位于所述孔中并电连接到至少一个所述导电焊盘。

公开(公告)号：US20140199835A1

公开(公告)日：2014-07-17

申请号：US14214389

申请日：2014-03-14

Applicant: XINTEC INC.

Inventor： Yu-Lin YEN ,  Chien-Hui CHEN ,  Tsang-Yu LIU ,  Long-Sheng YEOU

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  B81B7/007 ,  B81B2207/07 ,  B81B2207/092 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/3178 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/13 ,  H01L24/32 ,  H01L24/94 ,  H01L25/0657 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/13025 ,  H01L2224/9202 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

Abstract: According to an embodiment of the invention, a chip package is provided. The chip package includes: a substrate having an upper surface and a lower surface; a plurality of conducting pads located under the lower surface of the substrate; a dielectric layer located between the conducting pads; a trench extending from the upper surface towards the lower surface of the substrate; a hole extending from a bottom of the trench towards the lower surface of the substrate, wherein an upper sidewall of the hole inclines to the lower surface of the substrate, and a lower sidewall or a bottom of the hole exposes a portion of the conducting pads; and a conducting layer located in the hole and electrically connected to at least one of the conducting pads.

Abstract translation: 根据本发明的实施例，提供了芯片封装。 芯片封装包括：具有上表面和下表面的基板; 位于所述基板的下表面下方的多个导电垫; 位于导电垫之间的电介质层; 从衬底的上表面延伸到下表面的沟槽; 从所述沟槽的底部延伸到所述衬底的下表面的孔，其中所述孔的上侧壁倾斜到所述衬底的下表面，并且所述孔的下侧壁或底部暴露所述导电垫的一部分 ; 以及导电层，其位于所述孔中并电连接到至少一个所述导电焊盘。

公开(公告)号：US20140113412A1

公开(公告)日：2014-04-24

申请号：US14135506

申请日：2013-12-19

Applicant: XINTEC INC.

Inventor： Chia-Lun TSAI ,  Chia-Ming CHENG ,  Long-Sheng YEOU

IPC: H01L21/78

CPC classification number: H01L21/78 ,  B81B2207/07 ,  B81B2207/098 ,  B81C1/00825 ,  B81C2201/014 ,  B81C2201/053 ,  B81C2203/0118

Abstract: An embodiment of the present invention relates to a chip package and fabrication method thereof, which includes a chip protection layer or an additional etching stop layer to cover conducting pads to prevent dicing residue from damaging or scratching the conducting pads. According to another embodiment, a chip protection layer, an additional etching stop layer formed thereon, or a metal etching stop layer level with conducting pads or combinations thereof may be used when etching an intermetal dielectric layer at a structural etching region and a silicon substrate to form an opening for subsequent semiconductor manufacturing processes.

Abstract translation: 本发明的实施例涉及一种芯片封装及其制造方法，其包括芯片保护层或附加的蚀刻停止层，以覆盖导电焊盘，以防止切割残留物损坏或划伤导电焊盘。 根据另一个实施例，当蚀刻结构蚀刻区域和硅衬底上的金属间电介质层时，可以使用芯片保护层，其上形成的附加蚀刻停止层或具有导电焊盘或其组合的金属蚀刻停止层， 形成随后的半导体制造工艺的开口。