公开(公告)号：US20100006922A1

公开(公告)日：2010-01-14

申请号：US12169371

申请日：2008-07-08

申请人： Yasuyuki MATSUOKA ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

发明人： Yasuyuki MATSUOKA ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

IPC分类号： H01L29/792

CPC分类号： H01L21/28282 ,  G11C16/0483 ,  H01L27/0688 ,  H01L27/11565 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/66666 ,  H01L29/66833 ,  H01L29/7827 ,  H01L29/7828

摘要： The invention provides a nonvolatile semiconductor memory device comprising a plurality of memory strings each including a plurality of electrically programmable memory cells connected in series. The memory string includes a semiconductor pillar, an insulator formed around the circumference of the semiconductor pillar, and first through nth electrodes to be turned into gate electrodes (n denotes a natural number equal to 2 or more) formed around the circumference of the insulator. It also includes interlayer electrodes formed in regions between the first through nth electrodes around the circumference of the insulator.

摘要翻译： 本发明提供了一种非易失性半导体存储器件，包括多个存储串，每个存储串包括串联连接的多个电可编程存储器单元。 存储器串包括半导体柱，形成在半导体柱的圆周周围的绝缘体和形成在绝缘体的周围的周围形成为栅电极的第一至第n电极（n表示自然数等于2以上）。 它还包括形成在绝缘体周围的第一至第n电极之间的区域中的层间电极。

公开(公告)号：US20090230459A1

公开(公告)日：2009-09-17

申请号：US12396062

申请日：2009-03-02

申请人： Masaru KITO ,  Ryota KATSUMATA ,  Hiroyasu TANAKA ,  Masaru KIDOH ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Yasuyuki MATSUOKA

发明人： Masaru KITO ,  Ryota KATSUMATA ,  Hiroyasu TANAKA ,  Masaru KIDOH ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Yasuyuki MATSUOKA

IPC分类号： H01L29/792 ,  H01L29/788 ,  H01L21/336

CPC分类号： H01L29/7881 ,  H01L27/11565 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： A non-volatile semiconductor memory device includes a memory string which is electrically rewritable and includes a plurality of memory cells connected in series. The memory string includes a plurality of first conductive layers which are extended parallel to a substrate and laminated; a first semiconductor layer which is formed so as to pass through the plurality of the first conductive layers; and an electric charge accumulation layer which is formed between the first conductive layer and the first semiconductor layer and is configured so as to be able to accumulate electric charge. The first conductive layer is configured by material smaller in work function than P+-type polysilicon.

摘要翻译： 一种非易失性半导体存储器件包括可重写的存储器串，并且包括串联连接的多个存储器单元。 存储器串包括平行于衬底延伸并层叠的多个第一导电层; 形成为穿过所述多个所述第一导电层的第一半导体层; 以及形成在第一导电层和第一半导体层之间并且能够积累电荷的电荷积累层。 第一导电层由功函数小于P +型多晶硅的材料构成。

公开(公告)号：US20090108333A1

公开(公告)日：2009-04-30

申请号：US12260589

申请日：2008-10-29

申请人： Masaru KITO ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Hiroyasu TANAKA ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Yasuyuki MATSUOKA

发明人： Masaru KITO ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Hiroyasu TANAKA ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Yasuyuki MATSUOKA

IPC分类号： H01L29/788 ,  H01L21/3205

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11556

摘要： A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate; a charge accumulation layer formed on the first columnar semiconductor layer via a first air gap and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of first conductive layers contacting the block insulation layer.

摘要翻译： 非易失性半导体存储装置具有多个具有串联连接的多个电可重写存储单元的存储器串。 每个存储器串包括：在垂直于衬底的方向上延伸的第一柱状半导体层; 电荷累积层，经由第一气隙形成在第一柱状半导体层上，并积累电荷; 与电荷累积层接触的块绝缘层; 以及与块绝缘层接触的多个第一导电层。

公开(公告)号：US20080173932A1

公开(公告)日：2008-07-24

申请号：US11970992

申请日：2008-01-08

申请人： Masaru KIDOH ,  Ryota KATSUMATA ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Hiroyasu TANAKA ,  Yasuyuki MATSUOKA ,  Yoshio OZAWA ,  Mitsuru SATO

发明人： Masaru KIDOH ,  Ryota KATSUMATA ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Hiroyasu TANAKA ,  Yasuyuki MATSUOKA ,  Yoshio OZAWA ,  Mitsuru SATO

IPC分类号： H01L27/115 ,  H01L29/792 ,  H01L21/8247

CPC分类号： H01L29/792 ,  G11C16/0483 ,  H01L27/0688 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a columnar semiconductor; a charge storage insulating film including: a first insulating film formed around the columnar semiconductor, a charge storage film formed around the first insulating film, and a second insulating film formed around the charge storage film; an electrode extending two-dimensionally to surround the charge storage insulating film, the electrode having a groove; and a metal silicide formed on a sidewall of the groove.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储器，包括：柱状半导体; 电荷存储绝缘膜，包括：围绕所述柱状半导体形成的第一绝缘膜，围绕所述第一绝缘膜形成的电荷存储膜，以及形成在所述电荷存储膜周围的第二绝缘膜; 电极，其二维地延伸以包围电荷存储绝缘膜，所述电极具有凹槽; 以及形成在所述槽的侧壁上的金属硅化物。

公开(公告)号：US20090001444A1

公开(公告)日：2009-01-01

申请号：US12132450

申请日：2008-06-03

申请人： Yasuyuki MATSUOKA ,  Masaru Kito ,  Hideaki Aochi ,  Takayuki Okamura

发明人： Yasuyuki MATSUOKA ,  Masaru Kito ,  Hideaki Aochi ,  Takayuki Okamura

IPC分类号： H01L29/788 ,  H01L21/28

CPC分类号： H01L27/115 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7883

摘要： This disclosure concerns a semiconductor memory device comprising a plurality of gate electrodes extending to a first direction; a reinforced insulation film extending to a second direction crossing the first direction, and connected to the adjacent gate electrodes; and an interlayer dielectric film provided between the adjacent gate electrodes, and having a void inside.

摘要翻译： 本公开涉及包括延伸到第一方向的多个栅电极的半导体存储器件; 加强绝缘膜延伸到与第一方向交叉的第二方向，并且连接到相邻的栅电极; 以及设置在相邻的栅电极之间并且内部具有空隙的层间绝缘膜。