公开(公告)号：US20090230459A1

公开(公告)日：2009-09-17

申请号：US12396062

申请日：2009-03-02

申请人： Masaru KITO ,  Ryota KATSUMATA ,  Hiroyasu TANAKA ,  Masaru KIDOH ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Yasuyuki MATSUOKA

发明人： Masaru KITO ,  Ryota KATSUMATA ,  Hiroyasu TANAKA ,  Masaru KIDOH ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Yasuyuki MATSUOKA

IPC分类号： H01L29/792 ,  H01L29/788 ,  H01L21/336

CPC分类号： H01L29/7881 ,  H01L27/11565 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： A non-volatile semiconductor memory device includes a memory string which is electrically rewritable and includes a plurality of memory cells connected in series. The memory string includes a plurality of first conductive layers which are extended parallel to a substrate and laminated; a first semiconductor layer which is formed so as to pass through the plurality of the first conductive layers; and an electric charge accumulation layer which is formed between the first conductive layer and the first semiconductor layer and is configured so as to be able to accumulate electric charge. The first conductive layer is configured by material smaller in work function than P+-type polysilicon.

摘要翻译： 一种非易失性半导体存储器件包括可重写的存储器串，并且包括串联连接的多个存储器单元。 存储器串包括平行于衬底延伸并层叠的多个第一导电层; 形成为穿过所述多个所述第一导电层的第一半导体层; 以及形成在第一导电层和第一半导体层之间并且能够积累电荷的电荷积累层。 第一导电层由功函数小于P +型多晶硅的材料构成。

公开(公告)号：US20090146190A1

公开(公告)日：2009-06-11

申请号：US12325711

申请日：2008-12-01

申请人： Yoshiaki FUKUZUMI ,  Ryota Katsumata ,  Masaru Kidoh ,  Masaru Kito ,  Hiroyasu Tanaka ,  Hideaki Aochi ,  Yasuyuki Matsuoka

发明人： Yoshiaki FUKUZUMI ,  Ryota Katsumata ,  Masaru Kidoh ,  Masaru Kito ,  Hiroyasu Tanaka ,  Hideaki Aochi ,  Yasuyuki Matsuoka

IPC分类号： H01L27/115 ,  H01L21/8247

CPC分类号： H01L27/11578 ,  H01L27/11575 ,  H01L27/11582

摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory device, comprising a plurality of memory strings, each of the memory strings being constituted with a plurality of electrically erasable memory cells being serially connected each other, the memory strings comprising: a columnar semiconductor layer perpendicularly extending toward a substrate; a plurality of conductive layers being formed in parallel to the substrate and including a first space between a sidewall of the columnar semiconductor layers; and characteristic change layer being formed on the sidewall of the columnar semiconductor layer faced to the first space or a sidewall of the conductive layer faced to the first space and changing characteristics accompanying with applied voltage; wherein the plurality of the conductive layers have a function of a relative movement to a prescribed direction for the columnar semiconductor layer.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储器件，包括多个存储器串，每个存储器串由多个电可擦除存储器单元组成，所述多个电可擦除存储器单元串联连接，所述存储器串包括 ：向衬底垂直延伸的柱状半导体层; 多个导电层平行于衬底形成并且包括柱状半导体层的侧壁之间的第一空间; 并且特征变化层形成在面向面向第一空间的导电层的第一空间或侧壁的柱状半导体层的侧壁上，并且伴随施加电压的变化特性; 其中所述多个所述导电层具有对于所述柱状半导体层相对于规定方向的相对移动的功能。

公开(公告)号：US20090108333A1

公开(公告)日：2009-04-30

申请号：US12260589

申请日：2008-10-29

申请人： Masaru KITO ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Hiroyasu TANAKA ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Yasuyuki MATSUOKA

发明人： Masaru KITO ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Hiroyasu TANAKA ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Yasuyuki MATSUOKA

IPC分类号： H01L29/788 ,  H01L21/3205

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11556

摘要： A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate; a charge accumulation layer formed on the first columnar semiconductor layer via a first air gap and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of first conductive layers contacting the block insulation layer.

摘要翻译： 非易失性半导体存储装置具有多个具有串联连接的多个电可重写存储单元的存储器串。 每个存储器串包括：在垂直于衬底的方向上延伸的第一柱状半导体层; 电荷累积层，经由第一气隙形成在第一柱状半导体层上，并积累电荷; 与电荷累积层接触的块绝缘层; 以及与块绝缘层接触的多个第一导电层。

公开(公告)号：US20080173932A1

公开(公告)日：2008-07-24

申请号：US11970992

申请日：2008-01-08

申请人： Masaru KIDOH ,  Ryota KATSUMATA ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Hiroyasu TANAKA ,  Yasuyuki MATSUOKA ,  Yoshio OZAWA ,  Mitsuru SATO

发明人： Masaru KIDOH ,  Ryota KATSUMATA ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Hiroyasu TANAKA ,  Yasuyuki MATSUOKA ,  Yoshio OZAWA ,  Mitsuru SATO

IPC分类号： H01L27/115 ,  H01L29/792 ,  H01L21/8247

CPC分类号： H01L29/792 ,  G11C16/0483 ,  H01L27/0688 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a columnar semiconductor; a charge storage insulating film including: a first insulating film formed around the columnar semiconductor, a charge storage film formed around the first insulating film, and a second insulating film formed around the charge storage film; an electrode extending two-dimensionally to surround the charge storage insulating film, the electrode having a groove; and a metal silicide formed on a sidewall of the groove.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储器，包括：柱状半导体; 电荷存储绝缘膜，包括：围绕所述柱状半导体形成的第一绝缘膜，围绕所述第一绝缘膜形成的电荷存储膜，以及形成在所述电荷存储膜周围的第二绝缘膜; 电极，其二维地延伸以包围电荷存储绝缘膜，所述电极具有凹槽; 以及形成在所述槽的侧壁上的金属硅化物。

公开(公告)号：US20130109157A1

公开(公告)日：2013-05-02

申请号：US13723601

申请日：2012-12-21

申请人： Masaru KITO ,  Yoshiaki FUKUZUMI ,  Masaru KIDOH ,  Megumi ISHIDUKI ,  Yosuke KOMORI ,  Hiroyasu TANAKA ,  Ryota KATSUMATA ,  Hideaki AOCHI

发明人： Masaru KITO ,  Yoshiaki FUKUZUMI ,  Masaru KIDOH ,  Megumi ISHIDUKI ,  Yosuke KOMORI ,  Hiroyasu TANAKA ,  Ryota KATSUMATA ,  Hideaki AOCHI

IPC分类号： H01L29/792

CPC分类号： H01L29/7926 ,  H01L27/0688 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/7881

摘要： A non-volatile semiconductor storage device includes a plurality of memory strings each having a plurality of electrically rewritable memory cells connected in series. Each of the memory strings comprising: a first semiconductor layer including a columnar portion extending in a vertical direction with respect to a substrate; a plurality of first conductive layers formed to surround side surfaces of the columnar portions via insulation layers, and formed at a certain pitch in the vertical direction, the first conductive layers functioning as floating gates of the memory cells; and a plurality of second conductive layers formed to surround the first conductive layers via insulation layers, and functioning as control electrodes of the memory cells. Each of the first conductive layers has a length in the vertical direction that is shorter than a length in the vertical direction of each of the second conductive layers.

摘要翻译： 非挥发性半导体存储装置包括多个存储串，每个存储串具有串联连接的多个电可重写存储单元。 每个存储器串包括：第一半导体层，包括相对于衬底在垂直方向上延伸的柱状部分; 多个第一导电层，经由绝缘层形成为围绕柱状部分的侧表面，并以垂直方向上的一定间距形成，第一导电层用作存储器单元的浮动栅极; 以及形成为经由绝缘层包围第一导电层并且用作存储单元的控制电极的多个第二导电层。 每个第一导电层在垂直方向上具有比每个第二导电层的垂直方向上的长度短的长度。

公开(公告)号：US20120135593A1

公开(公告)日：2012-05-31

申请号：US13366509

申请日：2012-02-06

申请人： Masaru KITO ,  Yoshiaki FUKUZUMI ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Hiroyasu TANAKA ,  Megumi ISHIDUKI ,  Yosuke KOMORI ,  Hideaki AOCHI

发明人： Masaru KITO ,  Yoshiaki FUKUZUMI ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Hiroyasu TANAKA ,  Megumi ISHIDUKI ,  Yosuke KOMORI ,  Hideaki AOCHI

IPC分类号： H01L21/336

CPC分类号： H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors, one of which is connected to each of ends of each of the memory strings. Each of the memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate, and a joining portion formed so as to join lower ends of the pair of columnar portions; a charge storage layer formed so as to surround a side surface of the columnar portions; and a first conductive layer formed so as to surround the side surface of the columnar portions and the charge storage layer, and configured to function as a control electrode of the memory cells. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; and a second conductive layer formed so as to surround a side surface of the second semiconductor layer with a gap interposed, and configured to function as a control electrode of the select transistors.

摘要翻译： 非易失性半导体存储器件包括多个存储串，每个存储串具有串联连接的多个电可重写存储单元; 并选择晶体管，其中一个连接到每个存储器串的每一端。 每个存储器串都具有第一半导体层，该第一半导体层具有相对于基板在垂直方向上延伸的一对柱状部分，以及形成为连接该一对柱状部分的下端的接合部分; 形成为围绕所述柱状部的侧面的电荷存储层; 以及形成为围绕柱状部分的侧面和电荷存储层的第一导电层，并且被配置为用作存储单元的控制电极。 每个选择晶体管设置有从柱状部分的上表面向上延伸的第二半导体层; 以及第二导电层，其被形成为以间隔开的方式围绕所述第二半导体层的侧表面，并且被配置为用作所述选择晶体管的控制电极。

公开(公告)号：US20100224928A1

公开(公告)日：2010-09-09

申请号：US12714905

申请日：2010-03-01

申请人： Yoshiaki FUKUZUMI ,  Ryota Katsumata ,  Masaru Kito ,  Masaru Kidoh ,  Hiroyasu Tanaka ,  Yosuke Komori ,  Megumi Ishiduki ,  Junya Matsunami ,  Tomoko Fujiwara ,  Hideaki Aochi ,  Ryouhei Kirisawa

发明人： Yoshiaki FUKUZUMI ,  Ryota Katsumata ,  Masaru Kito ,  Masaru Kidoh ,  Hiroyasu Tanaka ,  Yosuke Komori ,  Megumi Ishiduki ,  Junya Matsunami ,  Tomoko Fujiwara ,  Hideaki Aochi ,  Ryouhei Kirisawa

IPC分类号： H01L29/792 ,  H01L21/8239

CPC分类号： H01L27/11578 ,  H01L21/28282 ,  H01L27/11582

摘要： A method for manufacturing a nonvolatile semiconductor memory device, the device including a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction and a semiconductor pillar piercing the stacked structural unit in the first direction, the method includes: forming a stacked unit including a core material film alternately stacked with a sacrificial film on a major surface of a substrate perpendicular to the first direction; making a trench in the stacked unit, the trench extending in the first direction and a second direction in a plane perpendicular to the first direction; filling a filling material into the trench; removing the sacrificial film to form a hollow structural unit, the hollow structural unit including a post unit supporting the core material film on the substrate, the post unit being made of the filling material; and forming the stacked structural unit by stacking one of the insulating films and one of the electrode films on a surface of the core material film exposed by removing the sacrificial film.

摘要翻译： 一种用于制造非易失性半导体存储器件的方法，该器件包括层叠结构单元，该堆叠结构单元包括在第一方向上交替堆叠多个电极膜的多个绝缘膜，以及沿第一方向穿透层叠结构单元的半导体柱， 方法包括：在垂直于第一方向的基板的主表面上形成包括交替堆叠有牺牲膜的芯材膜的堆叠单元; 在所述堆叠单元中形成沟槽，所述沟槽在垂直于所述第一方向的平面中沿所述第一方向延伸并且沿第二方向延伸; 将填充材料填充到沟槽中; 去除所述牺牲膜以形成中空结构单元，所述中空结构单元包括支撑所述芯材膜的柱单元，所述柱单元由所述填充材料制成; 以及通过将绝缘膜和其中一个电极膜层叠在通过去除牺牲膜而暴露的芯材膜的表面上来形成层叠结构单元。

公开(公告)号：US20100072538A1

公开(公告)日：2010-03-25

申请号：US12534576

申请日：2009-08-03

申请人： Masaru KITO ,  Yoshiaki FUKUZUMI ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Hiroyasu TANAKA ,  Megumi ISHIDUKI ,  Yosuke KOMORI ,  Hideaki AOCHI

发明人： Masaru KITO ,  Yoshiaki FUKUZUMI ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Hiroyasu TANAKA ,  Megumi ISHIDUKI ,  Yosuke KOMORI ,  Hideaki AOCHI

IPC分类号： H01L27/115 ,  H01L21/8246

CPC分类号： H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors, one of which is connected to each of ends of each of the memory strings. Each of the memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate, and a joining portion formed so as to join lower ends of the pair of columnar portions; a charge storage layer formed so as to surround a side surface of the columnar portions; and a first conductive layer formed so as to surround the side surface of the columnar portions and the charge storage layer, and configured to function as a control electrode of the memory cells. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; and a second conductive layer formed so as to surround a side surface of the second semiconductor layer with a gap interposed, and configured to function as a control electrode of the select transistors.

摘要翻译： 非易失性半导体存储器件包括多个存储串，每个存储串具有串联连接的多个电可重写存储单元; 并选择晶体管，其中一个连接到每个存储器串的每一端。 每个存储器串都具有第一半导体层，该第一半导体层具有相对于基板在垂直方向上延伸的一对柱状部分，以及形成为连接该一对柱状部分的下端的接合部分; 形成为围绕所述柱状部的侧面的电荷存储层; 以及形成为围绕柱状部分的侧面和电荷存储层的第一导电层，并且被配置为用作存储单元的控制电极。 每个选择晶体管设置有从柱状部分的上表面向上延伸的第二半导体层; 以及第二导电层，其被形成为以间隔开的方式围绕所述第二半导体层的侧表面，并且被配置为用作所述选择晶体管的控制电极。

公开(公告)号：US20120064683A1

公开(公告)日：2012-03-15

申请号：US13301442

申请日：2011-11-21

申请人： Megumi ISHIDUKI ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Hiroyasu TANAKA ,  Yosuke KOMORI ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI

发明人： Megumi ISHIDUKI ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Hiroyasu TANAKA ,  Yosuke KOMORI ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI

IPC分类号： H01L21/336

CPC分类号： H01L27/11578 ,  H01L27/11565 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： A multilayer body is formed by alternately stacking electrode films serving as control gates and dielectric films in a direction orthogonal to an upper surface of a silicon substrate. Trenches extending in the word line direction are formed in the multilayer body and a memory film is formed on an inner surface of the trench. Subsequently, a silicon body is buried inside the trench, and a charge storage film and the silicon body are divided in the word line direction to form silicon pillars. This simplifies the configuration of memory cells in the bit line direction, and hence can shorten the arrangement pitch of the silicon pillars, decreasing the area per memory cell.

摘要翻译： 通过在与硅衬底的上表面正交的方向上交替堆叠用作控制栅极和电介质膜的电极膜来形成多层体。 在多层体中形成在字线方向上延伸的沟槽，并且在沟槽的内表面上形成记忆膜。 随后，将硅体埋在沟槽内，并且电荷存储膜和硅体在字线方向上分开以形成硅柱。 这简化了位线方向上的存储单元的配置，因此可以缩短硅柱的排列间距，减小每个存储单元的面积。

公开(公告)号：US20100207194A1

公开(公告)日：2010-08-19

申请号：US12706127

申请日：2010-02-16

申请人： Hiroyasu TANAKA ,  Hideaki AOCHI ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Yosuke KOMORI ,  Megumi ISHIDUKI ,  Tomoko FUJIWARA ,  Junya MATSUNAMI ,  Ryouhei KIRISAWA

发明人： Hiroyasu TANAKA ,  Hideaki AOCHI ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Yosuke KOMORI ,  Megumi ISHIDUKI ,  Tomoko FUJIWARA ,  Junya MATSUNAMI ,  Ryouhei KIRISAWA

IPC分类号： H01L27/115 ,  H01L21/8246

CPC分类号： H01L29/792 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833

摘要： A nonvolatile semiconductor memory device includes: a semiconductor substrate; a stacked body provided on the semiconductor substrate, the stacked body having electrode films and insulating films being alternately stacked; a first and second semiconductor pillars; and a first and second charge storage layers. The first and second semiconductor pillars are provided inside a through hole penetrating through the stacked body in a stacking direction of the stacked body. The through hole has a cross section of an oblate circle, when cutting in a direction perpendicular to the stacking direction. The first and second semiconductor pillars face each other in a major axis direction of the first oblate circle. The first and second semiconductor pillars extend in the stacking direction. The first and second charge storage layers are provided between the electrode film and the first and second semiconductor pillars, respectively.

摘要翻译： 非易失性半导体存储器件包括：半导体衬底; 设置在所述半导体基板上的层叠体，具有交替堆叠的电极膜和绝缘膜的层叠体， 第一和第二半导体柱; 以及第一和第二电荷存储层。 第一半导体柱和第二半导体柱设置在层叠体的层叠方向上贯穿层叠体的贯通孔内。 当沿垂直于堆叠方向的方向切割时，通孔具有扁圆形的横截面。 第一和第二半导体柱在第一扁圆的长轴方向上彼此面对。 第一和第二半导体柱沿层叠方向延伸。 第一和第二电荷存储层分别设置在电极膜和第一和第二半导体柱之间。