公开(公告)号：US20080277803A1

公开(公告)日：2008-11-13

申请号：US12174273

申请日：2008-07-16

Applicant: Yoshiharu OGATA

Inventor： Yoshiharu OGATA

IPC: H01L23/52

CPC classification number: H05K3/305 ,  H01L21/563 ,  H01L23/3128 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/29007 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H05K1/0271 ,  H05K3/3452 ,  H05K2201/09772 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00011 ,  H01L2924/00014

Abstract: A semiconductor device comprises a wiring substrate including a wiring pattern; a semiconductor chip installed on the wiring substrate, including a plurality of pads formed on a surface of the semiconductor chip, which opposes the wiring substrate; a first resin layer covering over a part of the wiring pattern within a region of overlapping the semiconductor chip; and a second resin layer installed between the semiconductor chip and the first resin layer. The pads are oppose to and coupled with a part of the wiring pattern exposed over the first resin layer; and the linear expansion coefficient of the wiring substrate is larger than that of the semiconductor chip, the elastic modulus of the wiring substrate is lower than that of the semiconductor chip and the linear expansion coefficient of the first resin layer is larger than that of the second resin layer. The elastic modulus of the first resin layer is lower than that of the second resin layer.

Abstract translation: 半导体器件包括：布线基板，其包括布线图案; 安装在所述布线基板上的半导体芯片，包括与所述布线基板相对的形成在所述半导体芯片的表面上的多个焊盘; 覆盖所述布线图案的与所述半导体芯片重叠的区域的一部分上的第一树脂层; 以及安装在半导体芯片和第一树脂层之间的第二树脂层。 焊盘与暴露在第一树脂层上的布线图案的一部分相对并耦合; 并且布线基板的线膨胀系数大于半导体芯片的线膨胀系数，布线基板的弹性模量低于半导体芯片的弹性模量，并且第一树脂层的线膨胀系数大于第二树脂层的线膨胀系数 树脂层。 第一树脂层的弹性模量低于第二树脂层的弹性模量。

公开(公告)号：US20110241221A1

公开(公告)日：2011-10-06

申请号：US13159668

申请日：2011-06-14

Applicant: Yoshiharu OGATA

Inventor： Yoshiharu OGATA

IPC: H01L23/48

CPC classification number: H05K3/305 ,  H01L21/563 ,  H01L23/3128 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/29007 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H05K1/0271 ,  H05K3/3452 ,  H05K2201/09772 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00011 ,  H01L2924/00014

Abstract: A semiconductor device comprises a wiring substrate including a wiring pattern; a semiconductor chip installed on the wiring substrate, including a plurality of pads formed on a surface of the semiconductor chip, which opposes the wiring substrate; a first resin layer covering over a part of the wiring pattern within a region of overlapping the semiconductor chip; and a second resin layer installed between the semiconductor chip and the first resin layer. The pads are oppose to and coupled with a part of the wiring pattern exposed over the first resin layer; and the linear expansion coefficient of the wiring substrate is larger than that of the semiconductor chip, the elastic modulus of the wiring substrate is lower than that of the semiconductor chip and the linear expansion coefficient of the first resin layer is larger than that of the second resin layer. The elastic modulus of the first resin layer is lower than that of the second resin layer.

Abstract translation: 半导体器件包括：布线基板，其包括布线图案; 安装在所述布线基板上的半导体芯片，包括与所述布线基板相对的形成在所述半导体芯片的表面上的多个焊盘; 覆盖所述布线图案的与所述半导体芯片重叠的区域的一部分上的第一树脂层; 以及安装在半导体芯片和第一树脂层之间的第二树脂层。 焊盘与暴露在第一树脂层上的布线图案的一部分相对并耦合; 并且布线基板的线膨胀系数大于半导体芯片的线膨胀系数，布线基板的弹性模量低于半导体芯片的弹性模量，并且第一树脂层的线膨胀系数大于第二树脂层的线膨胀系数 树脂层。 第一树脂层的弹性模量低于第二树脂层的弹性模量。

公开(公告)号：US20100090327A1

公开(公告)日：2010-04-15

申请号：US12637345

申请日：2009-12-14

Applicant: Yoshiharu OGATA

Inventor： Yoshiharu OGATA

IPC: H01L25/065 ,  H01L23/52 ,  H01L23/28

CPC classification number: H05K3/305 ,  H01L21/563 ,  H01L23/3128 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/29007 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H05K1/0271 ,  H05K3/3452 ,  H05K2201/09772 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00011 ,  H01L2924/00014

Abstract: A semiconductor device comprises a wiring substrate including a wiring pattern; a semiconductor chip installed on the wiring substrate, including a plurality of pads formed on a surface of the semiconductor chip, which opposes the wiring substrate; a first resin layer covering over a part of the wiring pattern within a region of overlapping the semiconductor chip; and a second resin layer installed between the semiconductor chip and the first resin layer. The pads are oppose to and coupled with a part of the wiring pattern exposed over the first resin layer; and the linear expansion coefficient of the wiring substrate is larger than that of the semiconductor chip, the elastic modulus of the wiring substrate is lower than that of the semiconductor chip and the linear expansion coefficient of the first resin layer is larger than that of the second resin layer. The elastic modulus of the first resin layer is lower than that of the second resin layer.

Abstract translation: 半导体器件包括：布线基板，其包括布线图案; 安装在所述布线基板上的半导体芯片，包括与所述布线基板相对的形成在所述半导体芯片的表面上的多个焊盘; 覆盖所述布线图案的与所述半导体芯片重叠的区域的一部分上的第一树脂层; 以及安装在半导体芯片和第一树脂层之间的第二树脂层。 焊盘与暴露在第一树脂层上的布线图案的一部分相对并耦合; 并且布线基板的线膨胀系数大于半导体芯片的线膨胀系数，布线基板的弹性模量低于半导体芯片的弹性模量，并且第一树脂层的线膨胀系数大于第二树脂层的线膨胀系数 树脂层。 第一树脂层的弹性模量低于第二树脂层的弹性模量。

公开(公告)号：US20090020867A1

公开(公告)日：2009-01-22

申请号：US12168438

申请日：2008-07-07

Applicant: Yoshiharu OGATA ,  Yoshikatsu SOMA ,  Hiroharu KONDO ,  Munehide SAIMEN

Inventor： Yoshiharu OGATA ,  Yoshikatsu SOMA ,  Hiroharu KONDO ,  Munehide SAIMEN

IPC: H01L23/36

CPC classification number: H01L23/3675 ,  H01L23/4006 ,  H01L23/4985 ,  H01L2023/4043 ,  H01L2023/405 ,  H01L2023/4056 ,  H01L2224/32225

Abstract: A semiconductor device, includes: a wiring substrate having a wiring pattern on a front surface thereof; a first semiconductor chip mounted on the front surface of the wiring substrate; a first heat radiator having a first recess housing the first semiconductor chip and making contact with the front surface of the wiring substrate and the first semiconductor chip directly or with a first insulation layer; a second heat radiator making contact with a rear surface of the wiring substrate directly or with a second insulation layer; and a first fixing member passing through the first heat radiator, the wiring substrate, and the second heat radiator, and pressing the first heat radiator and the second heat radiator to the wiring substrate.

Abstract translation: 一种半导体器件，包括：布线基板，其前表面具有布线图案; 安装在所述布线基板的前表面上的第一半导体芯片; 第一散热器，其具有容纳所述第一半导体芯片的第一凹部，并且与所述布线基板的前表面和所述第一半导体芯片直接或与第一绝缘层接触; 第二散热器直接或与第二绝缘层与布线基板的后表面接触; 以及通过所述第一散热器，所述布线基板和所述第二散热器的第一固定构件，并且将所述第一散热器和所述第二散热器按压到所述布线基板。

公开(公告)号：US20100230827A1

公开(公告)日：2010-09-16

申请号：US12782749

申请日：2010-05-19

Applicant: Yoshiharu OGATA ,  Tadashi AIZAWA ,  Takeo KITAZAWA

Inventor： Yoshiharu OGATA ,  Tadashi AIZAWA ,  Takeo KITAZAWA

IPC: H01L23/538 ,  H01L21/00

CPC classification number: H01L23/3128 ,  H01L23/552 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06575 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes a first semiconductor chip that is mounted face-down on a substrate, a second semiconductor chip that is mounted face-up on the first semiconductor chip, and a dummy chip that is interposed between the first semiconductor chip and the second semiconductor chip. The dummy chip is made from a homogenous material comprising silicon or an alloy containing an atomic percentage majority of silicon.

Abstract translation: 半导体器件包括面朝下安装在基板上的第一半导体芯片，面向第一半导体芯片的第二半导体芯片以及置于第一半导体芯片和第二半导体之间的虚设芯片 芯片。 虚拟芯片由包含硅或含有硅原子百分比的合金的均匀材料制成。

公开(公告)号：US20070296087A1

公开(公告)日：2007-12-27

申请号：US11839712

申请日：2007-08-16

Applicant: Yoshiharu OGATA ,  Tadashi AIZAWA ,  Takeo KITAZAWA

Inventor： Yoshiharu OGATA ,  Tadashi AIZAWA ,  Takeo KITAZAWA

IPC: H01L23/48

CPC classification number: H01L23/3128 ,  H01L23/552 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06575 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes a first semiconductor chip face-down mounted on a substrate, a second semiconductor chip face-up mounted on the first semiconductor chip, and an electromagnetic shielding plate interposed between the first semiconductor chip and the second semiconductor chip.

Abstract translation: 半导体器件包括：安装在基板上的面朝下的第一半导体芯片，安装在第一半导体芯片上的第二半导体芯片面朝上;以及介于第一半导体芯片和第二半导体芯片之间的电磁屏蔽板。