Abstract:
A printed circuit board includes a layered substrate having a plurality of layers having an electrical connector footprint configured to receive an electrical connector. The printed circuit board includes pair anti-pads passing through the layered substrate around pairs of signal vias. The printed circuit board includes ground vias passing through the layered substrate. The ground vias are configured to receive ground pins of the electrical connector. The ground vias are located outside of the pair anti-pads. The printed circuit board includes SI vias passing through the layered substrate. The SI vias form an SI fence surrounding the corresponding pair anti-pad.
Abstract:
Provided is a printed wiring board including a first heat dissipation pattern placed in one surface layer on which a semiconductor package is to be mounted, a second heat dissipation pattern placed in the other surface layer, and an inner layer conductor pattern placed in an inner layer, in which through holes are formed in the printed wiring board; the first heat dissipation pattern has a joint portion which is placed in an opposed region opposed to a heat sink of the semiconductor package and which is joined to the heat sink with solder; at least one of the through holes is placed in the opposed region; and the second heat dissipation pattern is formed in a pattern in which an end portion of a conductor film in the one of the through holes on the other surface layer side is separated.
Abstract:
A printed circuit board includes a board body having a routing-limited area. The routing-limited area is provided with at least one solder pad that is adapted for supporting a metal support thereon. Preferably, the printed circuit board further includes a protrusion block disposed on the solder pad, and having a height greater than that of a signal trace that passes the routing-limited area.
Abstract:
A semiconductor device comprises a wiring substrate including a wiring pattern; a semiconductor chip installed on the wiring substrate, including a plurality of pads formed on a surface of the semiconductor chip, which opposes the wiring substrate; a first resin layer covering over a part of the wiring pattern within a region of overlapping the semiconductor chip; and a second resin layer installed between the semiconductor chip and the first resin layer. The pads are oppose to and coupled with a part of the wiring pattern exposed over the first resin layer; and the linear expansion coefficient of the wiring substrate is larger than that of the semiconductor chip, the elastic modulus of the wiring substrate is lower than that of the semiconductor chip and the linear expansion coefficient of the first resin layer is larger than that of the second resin layer. The elastic modulus of the first resin layer is lower than that of the second resin layer.
Abstract:
Provided are a circuit board with enhanced moisture resist and the method of manufacturing the circuit board, and a circuit device and a method of manufacturing the circuit device. A circuit board of the present invention includes: a substrate; wirings formed on the main surface of the substrate; a cover layer covering the wirings excluding the regions to be connectors; back electrodes formed on the bottom surface of the substrate; and through-hole electrodes formed so as to penetrate the substrate, and thereby connecting the wirings and the back electrodes. On surfaces of each of the wirings in this circuit board, convex portions on the periphery of the substrate are set larger in width than convex portions in a center portion of the substrate. With this configuration, adhesion reliability between the wirings and the cover layer under a thermal cycle load can be enhanced.
Abstract:
A semiconductor device has a thermally conductive layer with a plurality of openings formed over a temporary carrier. The thermally conductive layer includes electrically non-conductive material. A semiconductor die has a plurality of bumps formed over contact pads on the die. The semiconductor die is mounted over the thermally conductive layer so that the bumps are disposed at least partially within the openings in the thermally conductive layer. An encapsulant is deposited over the die and thermally conductive layer. The temporary carrier is removed to expose the bumps. A first interconnect structure is formed over the encapsulant, semiconductor die, and bumps. The bumps are electrically connected to the first interconnect structure. A heat sink or shielding layer can be formed over the semiconductor die. A second interconnect structure can be formed over the encapsulant and electrically connected to the first interconnect structure through conductive vias formed in the encapsulant.
Abstract:
A mount structure includes a wiring board and a semiconductor device composed of a light-emitting device or a light-receiving device mounted on one surface side of the wiring board such that an optical axis thereof is oriented in a direction that extends along a board surface of the wiring board. On the one surface side of the wiring board, a first pad on which a first terminal of the semiconductor device is mounted, a second pad on which a second terminal of the semiconductor device is mounted, and a light-shielding conductive layer are formed using the same conductive layer. The first pad and the second pad are arranged on respective sides of an imaginary center line along which the optical axis of the semiconductor device extends and the light-shielding conductive layer is provided at a position beneath a light emission center or a light reception center of the semiconductor device in plan view.
Abstract:
Aiming at adjusting the height of bump electrodes connected to lands on a substrate, a semiconductor device 100 has a first interconnect substrate 103 and a second interconnect substrate 101. On one surface of these substrates, first lands 111 and second lands 113 are provided. The plane geometry of the second lands 113 is a polygon characterized by the inscribed circle thereof having an area smaller than the area of the inscribed circle of the first land.
Abstract:
A semiconductor device comprises a wiring substrate including a wiring pattern; a semiconductor chip installed on the wiring substrate, including a plurality of pads formed on a surface of the semiconductor chip, which opposes the wiring substrate; a first resin layer covering over a part of the wiring pattern within a region of overlapping the semiconductor chip; and a second resin layer installed between the semiconductor chip and the first resin layer. The pads are oppose to and coupled with a part of the wiring pattern exposed over the first resin layer; and the linear expansion coefficient of the wiring substrate is larger than that of the semiconductor chip, the elastic modulus of the wiring substrate is lower than that of the semiconductor chip and the linear expansion coefficient of the first resin layer is larger than that of the second resin layer. The elastic modulus of the first resin layer is lower than that of the second resin layer.
Abstract:
An energy conditioner structure comprising a first electrode (120), a second electrode (80), and a shield structure (70, 110, 150) provides improved energy conditioning in electrical circuits. The structures may exist as discrete components or part of an integrated circuit. The shield structure in the energy conditioner structure does not electrically connect to any circuit element.